Organic light-emitting diode device including functional layer made of acidic metal sol, manufacturing method thereof, and display device

1. An organic light-emitting diode device, comprising an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, a functional layer, and a cathode layer that are sequentially stacked,

wherein material of the functional layer comprises an acidic metal sol, and the acidic metal sol contains conductive metal nanoparticles.

2. The organic light-emitting diode device according to claim 1 , wherein the conductive metal nanoparticles comprise one or more of conductive Au nanoparticles, conductive Ag nanoparticles, and conductive Al nanoparticles.

3. The organic light-emitting diode device according to claim 1 , wherein the organic light-emitting diode device further comprises a buffer layer comprising an organic material, and the buffer layer is disposed between the functional layer and the electron transport layer.

4. The organic light-emitting diode device according to claim 1 , wherein material of the functional layer further comprises an organic material.

5. The organic light-emitting diode device according to claim 4 , wherein a ratio of the acidic metal sol to the organic material of the functional layer is between 1:5 and 5:1.

6. The organic light-emitting diode device according to claim 4 , wherein the organic material of the functional layer comprises epoxy resin.

7. The organic light-emitting diode device according to claim 1 , wherein the organic light-emitting diode device further comprises a hole injection layer and an electron injection layer, the hole injection layer is disposed between the hole transport layer and the anode layer, and the electron injection layer is disposed between the functional layer and the electron transport layer.

8. A display device, comprising a device body and a display panel disposed on the device body, wherein the display panel comprises a thin film transistor array substrate and a plurality of organic light-emitting diode devices disposed on the thin film transistor array substrate, each of the organic light-emitting diode devices comprises an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, a functional layer, and a cathode layer that are sequentially stacked; and

wherein material of the functional layer comprises an acidic metal sol, and the acidic metal sol contains conductive metal nanoparticles.

9. The display device according to claim 8 , wherein the conductive metal nanoparticles comprise one or more of conductive Au nanoparticles, conductive Ag nanoparticles, and conductive Al nanoparticles.

10. The display device according to claim 8 , wherein the organic light-emitting diode device further comprises a buffer layer comprising an organic material, and the buffer layer is disposed between the functional layer and the electron transport layer.

11. The display device according to claim 8 , wherein material of the functional layer further comprises an organic material.

12. The display device according to claim 11 , wherein a ratio of the acidic metal sol to the organic material of the functional layer is between 1:5 and 5:1.

13. The display device according to claim 12 , wherein the organic material of the functional layer comprises epoxy resin.

14. The display device according to claim 8 , wherein the organic light-emitting diode device further comprises a hole injection layer and an electron injection layer, the hole injection layer is disposed between the hole transport layer and the anode layer, and the electron injection layer is disposed between the functional layer and the electron transport layer.

15. A method of manufacturing an organic light-emitting diode device, comprising:

providing a substrate on which an anode layer, a hole transport layer, a light-emitting layer, and an electron transport layer are sequentially formed;

forming a functional layer on a side of the electron transport layer away from the light-emitting layer, wherein material of the functional layer comprises an acidic metal sol comprising conductive metal nanoparticles; and

forming a cathode layer on a side of the functional layer away from the electron transport layer.

16. The method of manufacturing the organic light-emitting diode device according to claim 15 , wherein a step of preparing the material of the functional layer comprises:

immersing the conductive metal nanoparticles in an acidic solvent for 12-24 hours;

filtering the immersed conductive metal nanoparticles, and followed by a drying treatment at a temperature of 80 to 120° C.;

formulating the dried conductive metal nanoparticles into the acidic metal sol; and

mixing the acidic metal sol and an organic material according to a certain ratio to form the material of the functional layer.

17. The method of manufacturing the organic light-emitting diode according to claim 16 , wherein the conductive metal nanoparticles comprise one or more of conductive Au nanoparticles, conductive Ag nanoparticles, and conductive Al nanoparticles.

18. The method of manufacturing the organic light-emitting diode according to claim 16 , wherein the acidic solvent comprises dilute nitric acid, acetic acid, dilute phosphoric acid, or dilute hydrochloric acid.

19. The method of manufacturing the organic light-emitting diode according to claim 16 , wherein a concentration of the acidic solvent is between 5% and 25%.

20. The method of manufacturing the organic light-emitting diode according to claim 16 , wherein a ratio of the acidic metal sol to the organic material is between 1:5 and 5:1.