IP Library Granted Patent US 11,397,199
Granted Patent B2
US 11,397,199 · App. 17/036,394 · Granted Jul 26, 2022

Supply voltage detecting circuit, method of operating the same, electronic device comprising the same and electronic system comprising the same

Inventors: Cheolhwan Lim (Suwon-si, KR); Junhee Shin (Yongin-si, KR); Haejung Choi (Daegu, KR); Kwangho Kim (Yongin-si, KR); Hyunmyoung Kim (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G01R19/165G06F1/24G06F1/28H03K3/037H03K17/6872
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Quick Facts
Patent No.
US 11,397,199
App. No.
17/036,394
Granted
Jul 26, 2022
Kind
B2
Abstract

An electronic device includes circuitry configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to a logic high level at a second time occurring after the first time in response to the supply voltage reaches a second level higher than the first level; and the circuitry includes an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

Claims (43)

1. An electronic device comprising:

circuitry configured to,

output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level;

output a second output signal shifting to the logic high level at a second time occurring after the first time in response to the supply voltage reaching a second voltage level higher than the first voltage level; and

the circuitry including,

a first transistor configured to receive the supply voltage, and generate a first signal based on the received supply voltage;

a switch controller configured to apply voltages of different voltage levels to a gate terminal of the first transistor;

an inverter configured to invert the first signal and output the inverted first signal as the first output signal; and

an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

2. The electronic device of claim 1 , wherein the switch controller si further configured to:

apply the voltages of different voltage levels to the gate terminal of the first transistor according to a process variation of the first transistor.

3. The electronic device of claim 2 , wherein

the circuitry further includes a plurality of trim switches configured to determine a level of a voltage applied to the gate terminal of the first transistor; and

the switch controller is further configured to select at least one of the plurality of trim switches based on switch selection data.

4. The electronic device of claim 3 , wherein the switch controller is further configured to control a switching state of at least one of the plurality of trim switches based on a first enable signal.

5. The electronic device of claim 3 , wherein

the process variation of the first transistor includes a switching speed of the first transistor; and

the switch controller is further configured to control the plurality of trim switches such that a voltage of a lower level is applied to the gate terminal in response to the switching speed of the first transistor being higher.

6. The electronic device of claim 3 , wherein

the plurality of trim switches further includes a first trim switch and a second trim switch, the first trim switch configured to apply a voltage of a third voltage level to the gate terminal when turned on, and the second trim switch configured to apply a voltage of a fourth voltage level to the gate terminal when turned on, the fourth voltage level lower than the third voltage level; and

the switch controller is further configured to provide the first trim switch and the second trim switch with a switching control signal;

the first trim switch is further configured to turn on based on the switching control signal when a switching speed of the first transistor reaches a first value; and

the second trim switch is further configured to turn on based on the switch control signal when the switching speed of the first transistor reaches a second value, the second value higher than the first value.

7. The electronic device of claim 1 , further comprising:

at least one external intellectual property (IP) block configured to perform a reset operation based on the reset signal.

8. An electronic system comprising:

a supply voltage detecting circuit configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to the logic high level at a second time after the first time in response to the supply voltage reaching a second voltage level higher than the first voltage level, and output a reset signal of the logic high level based on the first output signal and the second output signal, the supply voltage detecting circuit including,

a first transistor configured to receive the applied supply voltage and generate a first signal based on the applied supply voltage,

a switch controller configured to apply voltages of different voltages of different voltage levels to a gate terminal of the first transistor, and

an inverter configured to invert the first signal and output the inverted first signal as the first output signal; and

at least one intellectual property (IP) block configured to operate based on the supply voltage and the reset signal.

9. The electronic system of claim 8 , wherein the switch controller is further configured to:

apply the voltages of different voltage levels to the gate terminal of the first transistor based on a process variation of the first transistor.

10. The electronic system of claim 9 , further comprising:

a plurality of trim switches each configured to determine a voltage level applied to the gate terminal of the first transistor,

wherein the switch controller is further configured to select at least one of the plurality of trim switches based on switch selection data.

11. The electronic system of claim 10 , wherein the switch controller is further configured to control a switching state of at least one of the plurality of trim switches based on a first enable signal.

12. The electronic system of claim 10 , wherein

the process variation of the first transistor includes a switching speed of the first transistor; and

the switch controller is further configured to control the plurality of trim switches such that a voltage of a lower level is applied to the gate terminal as the switching speed of the first transistor becomes higher.

13. The electronic system of claim 10 , wherein

the plurality of trim switches includes a first trim switch configured to apply a voltage of a third voltage level to the gate terminal when turned on, and a second trim switch configured to apply a voltage of a fourth voltage level to the gate terminal when turned on, the fourth voltage level lower than the third voltage level; and

the switch controller is further configured to provide the first trim switch and the second trim switch with a switching control signal, the switching control signal causing the first trim switch to turn on when a switching speed of the first transistor has a first value, and causing the second trim switch to turn on when the switching speed of the first transistor has a second value, the second value being higher than the first value.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2020
From: LIM, CHEOLHWAN; SHIN, JUNHEE; CHOI, HAEJUNG; KIM, KWANGHO; KIM, HYUNMYOUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 053973/0176 →
Priority Claims (1)
KR 10-2020-0011346 · Jan 30, 2020 · national
Continuity (1)
Related Publication 20210239744A1 · Aug 5, 2021
Cited By (1)
US 12,455,604