Semiconductor module
A semiconductor module may include: a first semiconductor chip including a first semiconductor substrate including a field effect transistor and constituted of SiC, a drain electrode and a source electrode provided on the first semiconductor substrate; a second semiconductor chip including a second semiconductor substrate including a diode, a cathode electrode and an anode electrode provided on the second semiconductor substrate; a first lead frame including a first main terminal and connected to the drain electrode and the cathode electrode; and a second lead frame including a second main terminal and connected to the source electrode and the anode electrode. A first current path extending from the second to first main terminal via the first semiconductor chip may be longer than a second current path extending from the second to first main terminal via the second semiconductor chip.
1. A semiconductor module, comprising:
a first semiconductor chip comprising:
a first semiconductor substrate comprising a field effect transistor and constituted of SiC (silicon carbide);
a drain electrode provided on one surface of the first semiconductor substrate; and
a source electrode provided on a surface of the first semiconductor substrate other than the one surface of the first semiconductor substrate;
a second semiconductor chip comprising:
a second semiconductor substrate comprising a diode;
a cathode electrode provided on one surface of the second semiconductor substrate; and
an anode electrode provided on a surface of the second semiconductor substrate other than the one surface of the second semiconductor substrate;
a first lead frame comprising a first main terminal and connected to the drain electrode and the cathode electrode; and
a second lead frame comprising a second main terminal and connected to the source electrode and the anode electrode,
wherein
a first current path extending from the second main terminal to the first main terminal through the first semiconductor chip is longer than a second current path extending from the second main terminal to the first main terminal through the second semiconductor chip.
2. The semiconductor module of claim 1 , wherein
the second semiconductor substrate further comprises an insulated gate bipolar transistor,
a collector of the insulated gate bipolar transistor is connected to the cathode electrode, and
an emitter of the insulated gate bipolar transistor is connected to the anode electrode.
3. The semiconductor module of claim 1 , further comprising:
a third semiconductor chip comprising:
a third semiconductor substrate comprising an insulated gate bipolar transistor;
a collector electrode provided on one surface of the third semiconductor substrate; and
an emitter electrode provided on a surface of the third semiconductor substrate other than the one surface of the third semiconductor substrate,
wherein
the first lead frame is connected to the collector electrode,
the second lead frame is connected to the emitter electrode, and
the third semiconductor chip is located between the first semiconductor chip and the second semiconductor chip.