Active matrix enhanced organic light emitting diode displays for large screen graphic display application
An active matrix light emitting display comprising an anode layer comprising a plurality of individual selectively energizable anodes, a cathode layer comprising a plurality of individual selectively energizable cathodes, an emitter layer for emitting light when energized disposed between the anode layer and the cathode layer, and a photoluminescent layer comprising a plurality of various color photoluminescent pixels, wherein a selected anode and a selected cathode are energizable to photoexcite a selected color pixel. A light emitting device comprising, a light emitting photonic crystal having organic electroluminescent emitter material disposed within the photonic crystal, and a photoluminescent material disposed upon a surface of the light emitting photonic crystal, such that light emitted by the light emitting photonic crystal causes photoexcitation within the photoluminescent material.
1. An active matrix light emitting display comprising:
a single light emitting photonic crystal with a periodic variation of the index of refraction comprising:
a distributed Bragg reflector (DBR) having a stop-band;
an anode layer comprising a plurality of individual selectively energizable anodes;
a cathode layer comprising a plurality of individual selectively energizable cathodes;
a light emitting layer configured to emit light having an emission spectrum a portion of which overlaps the stop-band, wherein the light emitting layer is disposed within a single layer, wherein the single layer of the of the DBR in which the emitter layer is disposed has an optical thickness of about (2n+1)λ emit /4, wherein n=0, 1, 2, or 3 and λ emit is the central wavelength of the stop band of the stop band of the DBR; and
a photoluminescent layer disposed upon the single light emitting photonic crystal, the photoluminescent layer comprising a plurality of photoluminescent pixels, wherein a selected anode and a selected cathode are energizable causing a portion of the light emitting layer to emit light in band-edge modes of the single light emitting photonic crystal thereby photoexciting selected ones of the plurality of photoluminescent pixels.
2. The active matrix light emitting display of claim 1 , wherein the light emitting layer comprises an organic electroluminescent material.
3. The active matrix light emitting display of claim 1 , wherein the anode layer, the cathode layer, and the light emitting layer do not interrupt the continuously periodic variation of the single light emitting photonic crystal's index of refraction.
4. The active matrix light emitting display of claim 3 , wherein the light emitting layer comprises an organic electroluminescent material.
5. The active matrix light emitting display of claim 4 , wherein the organic electroluminescent material is localized in a zone having less than 10% of an optical thickness of the single light emitting photonic crystal.
6. The active matrix light emitting display of claim 5 , wherein the single light emitting photonic crystal has a band-gap, and wherein the organic electroluminescent material has a free space emission spectrum that least in part overlaps the band-gap of the single light emitting photonic crystal.
7. The active matrix light emitting display of claim 6 , wherein the single light emitting photonic crystal emits light at a wavelength corresponding to an edge of the band-gap.
8. The active matrix light emitting display of claim 7 , wherein the edge of the band-gap occurs at a wavelength at which the measured radiance of luminescent light emitted by the organic electroluminescent material in free space is greater than one-quarter of a peak radiance in free space of the luminescence emission spectrum of the organic electroluminescent material.
9. A light emitting device comprising:
a single light emitting photonic crystal formed of a stack of layers, the single light emitting photonic crystal having a continuously periodically varying index of refraction in a light transmission direction;
an organic electroluminescent emitter material disposed within a layer of the photonic crystal and formed such that the period of the index of refraction variation is continuous through the layer containing the organic electroluminescent material; and
a photoluminescent material disposed upon a surface of the light emitting photonic crystal, such that light emitted by the light emitting photonic crystal at wavelengths corresponding to band-edge light emissions causes photoexcitation within the photoluminescent material; and
wherein the single layer comprised by the photonic crystal in which the emitter layer is disposed has a thickness that is equal to one-quarter or three-quarters of the central wavelength of the stop-band.
10. The light emitting device of claim 9 , wherein the organic electroluminescent emitter material comprises an organic light emitting material is localized in a zone having less than 10% of an optical thickness of the photonic crystal.
11. The light emitting device of claim 10 , wherein the light emitting photonic crystal has a band-gap, wherein the organic electroluminescent emitter material has a free space emission spectrum that least in part overlaps the band-gap of the photonic crystal.
12. The light emitting device of claim 11 , wherein the photonic crystal emits light at a wavelength corresponding to an edge of the band-gap.
13. The light emitting device of claim 12 , wherein the edge of the band-gap occurs at a wavelength at which a measured radiance of luminescent light emitted in free space by the electroluminescent emitter material is greater than one-quarter of a peak radiance of the free space luminance emission spectrum of the emitter material.
14. An active matrix light emitting display comprising:
a first layer containing a plurality of organic light emitting diodes that each include:
a distributed Bram reflector (DBR) having a stop-band;
a light emitting layer configured to emit light having an emission spectrum a portion of which overlaps the stop-band, wherein a light emitting layer is disposed within a single layer of the of the DBR having an optical thickness of about (2n+1)λ emit /4, wherein n=0, 1, 2, or 3 and λ emit is the central wavelength of the stop band of the stop band of the DBR; and
a photoluminescent layer disposed upon the first layer, the photoluminescent layer comprising a plurality of photoluminescent pixels, wherein the plurality of organic light emitting diodes that emit light at the band-edges of a plurality of photonic crystals are energizable, respectively, to photoexcite, respectively, selected ones of the plurality of photoluminescent pixels.
15. The active matrix light emitting display of claim 14 , wherein each of the organic light emitting diodes has a transmission axis and comprises:
a metallic mirror, wherein the distributed Bragg reflector (DBR) is disposed upon the metallic mirror and the light emitting layer comprises an emitter material configured to have an emission spectrum at least a portion of which overlaps a stop-band of the DBR.
16. The active matrix light emitting display of claim 15 , wherein the light emitting layer is adjacent to the metallic mirror.
17. The active matrix light emitting display of claim 1 , wherein one or more layers of the DBR have an optical thickness of about (2n+1)λ emit /4, wherein n=0, 1, 2, or 3 and λ emit is the central wavelength of the stop band of the stop band of the DBR.