IP Library › Granted Patent US 11,398,817
Granted Patent B2
US 11,398,817 · App. 16/870,855 · Granted Jul 26, 2022

On-line monitoring system for measuring on-state voltage drop of power semiconductor devices

Inventors: Ke Ma (Shanghai, CN); Ye Zhu (Shanghai, CN); Jiayang Lin (Shanghai, CN)
Assignee: SHANGHAI JIAO TONG UNIVERSITY
H03K17/0822G01R31/2621H02H3/207H03K2217/0027
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Quick Facts
Patent No.
US 11,398,817
App. No.
16/870,855
Granted
Jul 26, 2022
Kind
B2
Abstract

An online monitoring system for measuring the on-state voltage drop of power semiconductor devices comprises a voltage withstanding circuit and a voltage clamping circuit, one terminal of the voltage withstanding circuit is connected to one terminal of the voltage clamping circuit, and the other terminals of the voltage withstanding circuit and the voltage clamping circuit are randomly connected to two terminals of the power semiconductor device under test (DUT) respectively. The two terminals of the voltage clamping circuit are output terminals of the online monitoring system. A clamping voltage of the voltage clamping circuit is higher than the on-state voltage drop of the DUT. When the DUT is off, the output voltage of the system is fixed to the clamping voltage, and when it is on, the output voltage is not clamped. The system has simplified structure and enables convenient, accurate and low-cost measurement of on-state voltage drop.

Claims (37)

1. An on-line monitoring system for measuring an on-state voltage drop of a power semiconductor device, the monitoring system comprising:

a voltage withstanding circuit and a voltage clamping circuit;

wherein one terminal of the voltage withstanding circuit is connected to one terminal of the voltage clamping circuit, and the other terminal of the voltage withstanding circuit and the other terminal of the voltage clamping circuit are randomly connected to two terminals of the power semiconductor device under test respectively;

the two terminals of the voltage clamping circuit are output terminals of the on-line monitoring system;

a clamping voltage of the voltage clamping circuit is higher than the on-state voltage drop of the power semiconductor device under test;

when the power semiconductor device under test is off, an output voltage of the system is fixed to the clamping voltage, and when the power semiconductor device under test is on, the output voltage is not clamped; and

the two terminals of the power semiconductor device under test are terminal D and terminal S, one terminal of the voltage withstanding circuit is connected to the terminal D, the other terminal of the voltage withstanding circuit is connected to one terminal of the voltage clamping circuit, the other terminal of the voltage clamping circuit is connected to the terminal S, and the two terminals of the voltage clamping circuit are the output terminals of the on-line monitoring system.

2. The on-line monitoring system according to claim 1 , wherein the voltage withstanding circuit comprises a first field-effect transistor (FET) and a resistor, a drain of the first FET is connected to the terminal D, and two nodes of the resistor are connected to a gate and a source of the first FET respectively.

3. The on-line monitoring system according to claim 2 , wherein the voltage clamping circuit comprises a second FET, a gate and a drain of the second FET are connected to the gate of the first FET, a source of the second FET is connected to the terminal S, and the drain and the source of the second FET are the output terminals of the on-line monitoring system.

4. The on-line monitoring system according to claim 3 , wherein the voltage clamping circuit further comprises a diode, an anode of the diode is connected to the source of the second FET, a cathode of the diode is connected to the terminal S, and the drain of the second FET and the cathode of the diode are the output terminals of the on-line monitoring system.

5. The on-line monitoring system according to claim 3 , wherein the voltage clamping circuit further comprises a diode, an anode of the diode is connected to the gate of the first FET, a cathode of the diode is connected to the drain and the gate of the second FET, the source of the second FET is connected to the terminal S, and the anode of the diode and the source of the second FET are the output terminals of the on-line monitoring system.

6. The monitoring system according to claim 2 , wherein the voltage clamping circuit comprises a transistor, a gate and a collector of the transistor are connected to the gate of the first FET, an emitter of the transistor is connected to the terminal S, and the collector and the emitter of the transistor are the output terminals of the on-line monitoring system.

7. The on-line monitoring system according to claim 1 , wherein the voltage withstanding circuit comprises one or more voltage withstanding units and a current limiting circuit, and the current limiting circuit is connected in series between any two voltage withstanding units or between the voltage withstanding unit and the voltage clamping circuit.

8. The on-line monitoring system according to claim 7 , wherein the voltage withstanding unit comprises a first FET and a resistor, a drain of the first FET is one terminal of the voltage withstanding unit, a source of the first FET is connected to one node of the resistor, and a gate of the first FET connected to the other node of the resistor is the other terminal of the voltage withstanding unit.

9. The on-line monitoring system according to claim 8 , wherein the voltage withstanding unit further comprises a voltage balancing resistor, and two nodes of the voltage balancing resistor are connected to the drain and the gate of the first FET respectively.

10. The on-line monitoring system according to claim 7 , wherein the current limiting circuit comprises resistors or inductors or a series connection of resistors and inductors.

11. The on-line monitoring system for measuring an on-state voltage drop of a power semiconductor device, the monitoring system comprising:

a voltage withstanding circuit and a voltage clamping circuit;

wherein one terminal of the voltage withstanding circuit is connected to one terminal of the voltage clamping circuit, and the other terminal of the voltage withstanding circuit and the other terminal of the voltage clamping circuit are randomly connected to two terminals of the power semiconductor device under test respectively;

the two terminals of the voltage clamping circuit are output terminals of the on-line monitoring system;

a clamping voltage of the voltage clamping circuit is higher than the on-state voltage drop of the power semiconductor device under test;

when the power semiconductor device under test is off, an output voltage of the system is fixed to the clamping voltage, and when the power semiconductor device under test is on, the output voltage is not clamped; and

wherein the two terminals of the power semiconductor device under test are terminal D and terminal S, one terminal of the voltage withstanding circuit is connected to the terminal S, the other terminal of the voltage withstanding circuit is connected to one terminal of the voltage clamping circuit, the other terminal of the voltage clamping circuit is connected to the terminal D, and the two terminals of the voltage clamping circuit are the output terminals of the on-line monitoring system.

12. The on-line monitoring system according to claim 11 , wherein the voltage withstanding circuit comprises a first FET and a resistor, a source of the first FET is connected to the terminal S, two nodes of the resistor are connected to a gate and the source of the first FET respectively, and a drain of the first FET is connected to one terminal of the voltage clamping circuit.

13. The on-line monitoring system according to claim 12 , wherein the voltage clamping circuit comprises a second FET and a diode, a cathode of the diode is connected to the drain of the first FET, an anode of the diode is connected to a source of the second FET, a gate and a drain of the second FET are connected to the terminal D, and the drain of the second FET and the cathode of the diode are the output terminals of the on-line monitoring system.

14. The on-line monitoring system according to claim 12 , wherein the voltage clamping circuit comprises a second FET and a diode, a cathode of the diode is connected to a drain and a gate of the second FET, an anode of the diode is connected to the terminal D, the drain of the first FET is connected to a source of the second FET, and the anode of the diode and the source of the second FET are the output terminals of the on-line monitoring system.

15. The on-line monitoring system according to claim 12 , wherein the voltage clamping circuit comprises a transistor, an emitter of the transistor is connected to the drain of the first FET, a gate and a collector of the transistor are connected to the terminal D, and the collector and the emitter of the transistor are the output terminals of the on-line monitoring system.

16. An on-line monitoring system for measuring an on-state voltage drop of a power semiconductor device, the monitoring system comprising:

a voltage withstanding circuit and a voltage clamping circuit;

wherein one terminal of the voltage withstanding circuit is connected to one terminal of the voltage clamping circuit, and the other terminal of the voltage withstanding circuit and the other terminal of the voltage clamping circuit are randomly connected to two terminals of the power semiconductor device under test respectively;

the two terminals of the voltage clamping circuit are output terminals of the on-line monitoring system;

a clamping voltage of the voltage clamping circuit is higher than the on-state voltage drop of the power semiconductor device under test;

when the power semiconductor device under test is off, an output voltage of the system is fixed to the clamping voltage, and when the power semiconductor device under test is on, the output voltage is not clamped;

the voltage withstanding circuit comprises one or more voltage withstanding units and a current limiting circuit, and the current limiting circuit is connected in series between any two voltage withstanding units or between the voltage withstanding unit and the voltage clamping circuit; and

the voltage clamping circuit comprises a second FET or a transistor, a gate and a drain of the second FET connected together is a positive terminal of the voltage clamping circuit, and a source of the second FET is a negative terminal of the voltage clamping circuit; or a gate and a collector of the transistor connected together is the positive terminal of the voltage clamping circuit, and an emitter of the transistor is the negative terminal of the voltage clamping circuit.

17. The on-line monitoring system according to claim 16 , wherein the voltage clamping circuit further comprises a diode, a cathode of the diode is connected to the gate and the drain of the second FET, and an anode of the diode is the positive terminal of the voltage clamping circuit; or the anode of the diode is connected to the source of the second FET, and the cathode of diode is the negative terminal of the voltage clamping circuit.

18. The on-line monitoring system according to claim 16 , wherein the voltage clamping circuit further comprises a modulatory capacitor, two nodes of the modulatory capacitor are respectively connected to the gate and the source of the second FET, or to the gate and the emitter of the transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2020
From: MA, KE; ZHU, YE; LIN, JIAYANG
To: SHANGHAI JIAO TONG UNIVERSITY
Reel/Frame 052616/0935 →
Priority Claims (1)
CN 201910395515.9 · May 13, 2019 · national
Continuity (1)
Related Publication 20200366279A1 · Nov 19, 2020