Surface acoustic wave device
A surface acoustic wave device includes a quartz layer, a piezoelectric layer, and an Inter Digital Transducer. A rotation in a right-screw direction is assumed as a +-rotation. A three-dimensional coordinate system formed by an x1-axis, a y1-axis, and a z1-axis respectively matching an X-axis, a Y-axis, and a Z-axis as crystallographic axes of a quartz-crystal is rotated from +125.25° in a range of ±3° with the x1-axis as a rotation axis. Subsequently, the three-dimensional coordinate system is rotated from +45° in a range of ±2° with the z1-axis as the rotation axis. Subsequently, the three-dimensional coordinate system is rotated from −45° in a range of ±2° with the x1-axis as the rotation axis. The quartz layer is cut along a surface as a sectional plane perpendicular to the z1-axis. The quartz layer has a propagation direction of the surface acoustic wave in a direction parallel to the x1-axis.
1. A surface acoustic wave device, comprising:
a quartz layer;
a piezoelectric layer, being laminated on the quartz layer; and
an Inter Digital Transducer, being formed on the piezoelectric layer, and the Inter Digital Transducer exciting a surface acoustic wave on the piezoelectric layer,
wherein
a rotation in a right-screw direction of the quartz layer is assumed as a +-rotation,
a three-dimensional coordinate system formed by an x1-axis, a y1-axis, and a z1-axis respectively matching an X-axis, a Y-axis, and a Z-axis as crystallographic axes of a quartz-crystal of the quartz layer is rotated from +125.25° in a range of ±3° with the x1-axis as a rotation axis,
subsequently, the three-dimensional coordinate system is rotated from +45° in a range of ±2° with the z1-axis as the rotation axis,
subsequently, the three-dimensional coordinate system is rotated from −45° in a range of ±2° with the x1-axis as the rotation axis,
the quartz layer is cut along a surface as a sectional plane perpendicular to the z1-axis, and
the quartz layer has a propagation direction of the surface acoustic wave in a direction parallel to the x1-axis.
2. The surface acoustic wave device according to claim 1 , wherein
ρ(h1/λ)(w1/λ) is equal to 10.9 kg/m 3 to 49.8 kg/m 3 , where
a density of a material constituting the Inter Digital Transducer is ρ (kg/m 3 ),
a wavelength of the surface acoustic wave is λ (μm),
a thickness of the Inter Digital Transducer is h1 (μm), and
a width of an electrode finger constituting the Inter Digital Transducer is w1 (μm).
3. The surface acoustic wave device according to claim 2 , wherein
h1/λ is equal to 0.0162 to 0.0738.
4. The surface acoustic wave device according to claim 1 , wherein
the piezoelectric layer is X-29° to 33° Y LiTaO 3 .
5. The surface acoustic wave device according to claim 2 , wherein
h2/λ is equal to 0.032 to 0.203, where a thickness of the piezoelectric layer is h2.
6. The surface acoustic wave device according to claim 1 , wherein
the surface acoustic wave device is used in a bandwidth of 2 GHz or more.