Sonic cleaning of optical fiber draw furnace
A process for cleaning particulate matter from the interior of a muffle of an optical fiber draw furnace includes propagating sound waves through the interior of the muffle at a frequency of from about 75 Hz to about 5000 Hz and an intensity of from about 110 dB to about 160 dB.
1. A process for cleaning an optical fiber draw furnace comprising:
directing sound waves into an interior of a muffle of the optical fiber draw furnace, the muffle having particles adhered to a surface thereof, the sound waves having a sonic force sufficient to dislodge the particles from the surface of the muffle; and
maintaining an inert gas purge in the optical fiber draw furnace throughout the cleaning process to prevent oxidation of the muffle.
2. The process of claim 1 , wherein the sound waves have a frequency in the range from 75 Hz to 5000 Hz.
3. The process of claim 1 , wherein the sound waves have an intensity greater than 95 dB at the interior surface of the muffle.
4. The process of claim 1 , wherein the sound waves have an intensity greater than 110 dB at the interior surface of the muffle.
5. The process of claim 1 , wherein the sound waves have an intensity in the range from 110 dB to 160 dB at the interior surface of the muffle.
6. The process of claim 1 , wherein the sound waves are directed into the interior of the muffle for a time period of at least 10 sec.
7. The process of claim 1 , wherein the sound waves are directed into the interior of the muffle for a time period in the range from 10 sec to 10 min.
8. The process of claim 1 , wherein the muffle comprises graphite.
9. The process of claim 1 , wherein a temperature in the muffle is greater than about 1000° C.
10. The process of claim 1 , wherein a temperature in the muffle is greater than about 1500° C.
11. The process of claim 1 , wherein a temperature in the muffle is in the range from about 1500° C. to about 1900° C.
12. The process of claim 1 , wherein the particles comprise silicon.
13. The process of claim 12 , wherein the particles comprise silicon carbide.
14. The process of claim 1 , wherein the particles have a size greater than 0.5 μm.