Devices and methods for growing crystals
The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth.
1. A device for preparing a crystal, comprising:
a growth chamber configured to execute a crystal growth; and
a heating component including at least one heating unit, wherein
the at least one heating unit is located inside the growth chamber, and
the at least one heating unit includes at least one flow channel, wherein the at least one flow channel is opened on an upper surface of the at least one heating unit and a source material is placed on the upper surface of the at least one heating unit during the crystal growth.
2. The device of claim 1 , wherein
a density of the at least one flow channel opened in a central region of the upper surface of the at least one heating unit is less than a density of the at least one flow channel opened in an edge area of the upper surface of the at least one heating unit.
3. The device of claim 1 , wherein the heating component further includes at least one heating unit located outside the growth chamber.
4. The device of claim 3 , wherein
a density of the at least one flow channel opened in a central region of the upper surface of the at least one heating unit is larger than a density of the at least one flow channel opened in an edge area of the upper surface of the at least one heating unit.
5. The device of claim 3 , wherein the at least one heating unit located outside the growth chamber is partially disposed around an outer periphery of the growth chamber.
6. The device of claim 3 , wherein the at least one heating unit located outside the growth chamber includes at least three first heating units, wherein the at least three first heating units are disposed around an outside of the growth chamber and correspond to positions of a crystallization region, a source material region, and a vapor transport region between the crystallization region and the source material region in the growth chamber, respectively.
7. The device of claim 6 , wherein the at least three first heating units are individually controlled.
8. The device of claim 6 , wherein each of the at least three first heating units includes at least one first electrode and at least one second electrode distributed along a peripheral direction of the first heating unit.
9. The device of claim 3 , wherein the at least one heating unit located outside the growth chamber is located on an upper surface and/or a lower surface outside the growth chamber.
10. The device of claim 9 , wherein a contact area between the at least one heating unit located on the upper surface and/or the lower surface and the upper surface and/or the lower surface accounts for more than 50% of an area of the upper surface and/or the lower surface.
11. The device of claim 9 , wherein the heating component further includes at least one first electrode, at least one second electrode, and an electrode fixing plate, wherein the electrode fixing plate is configured to fix the at least one first electrode and the at least one second electrode.
12. The device of claim 11 , wherein
the at least one first electrode is fixed to the at least one heating unit located on the upper surface and/or the lower surface and the upper surface through at least one first hole, and
the at least one second electrode is fixed to the upper surface and/or the lower surface through at least one second hole.
13. The device of claim 12 , wherein a diameter of the at least one first electrode is less than a diameter of the at least one second electrode.
14. The device of claim 1 , wherein a cross-sectional area of one of the at least one flow channel does not exceed 1.5 times a particle size of the source material.
15. The device of claim 1 , wherein for one of the at least one heating unit, a total opening area of the at least one flow channel on the upper surface of the heating unit is within a range of 20% to 60% of an area of the heating unit.
16. The device of claim 1 , wherein the at least one heating unit is connected to at least one conduction ring through at least one conduction electrode, the at least one conduction ring located on an upper surface or/and a lower surface of the at least one heating unit.
17. The device of claim 1 , wherein a radius of the at least one flow channel is within a range of 0.1 mm to 1 mm.
18. The device of claim 1 , wherein the at least one flow channel is arranged as at least one flow channel circumference.
19. The device of claim 18 , wherein a central spacing distance between two adjacent flow channels on a flow channel circumference of the at least one flow channel circumference is within a range of 1.5 mm to 2.5 mm.
20. The device of claim 18 , wherein a radius of a flow channel circumference of the at least one flow channel circumference close to the central region of the upper surface of the at least one heating unit is within a range of 1 mm to 20 mm.