Semiconductor device heat extraction by spin thermoelectrics
Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.
1. A microelectronic device, comprising:
a transistor comprising:
a non-planar semiconductor body;
a source and drain coupled to a channel portion of the semiconductor body; and
a gate stack adjacent to at least a sidewall of the semiconductor body, the gate stack comprising a gate electrode and a gate dielectric between the gate electrode and the semiconductor body;
a spin orbit coupling (SOC) material comprising a metal, the SOC material separated from the semiconductor body and the gate electrode by a spin-Seebeck insulator, wherein the insulator comprises remanent magnetization; and
a load circuit coupled to the SOC material through a pair of terminals, the load circuit to be powered, at least in part, by a voltage across the pair of terminals, wherein the voltage is a function of a temperature variation across the insulator.
2. The microelectronic device of claim 1 , wherein the SOC material comprises at least one of β-Tantalum, β-Tungsten, Pt, TiS 2 , WS 2 , MoS 2 , TiSe 2 , WSe 2 , MoSe 2 , B 2 S 3 , Sb 2 S 3 , Ta 2 S, Re 2 S 7 , LaCPS 2 , LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , AlOBiS 2 , LaOSbS 2 , BiOBiS 2 , YOBiS 2 , InOBiS 2 , LaOBiSe 2 , TiOBiS 2 , CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , or SrFBiS 2 .
3. The microelectronic device of claim 2 , wherein the insulator comprises a ferromagnetic material.
4. The microelectronic device of claim 3 , wherein the insulator is single crystalline or polycrystalline.
5. The microelectronic device of claim 3 , wherein the insulator comprises at least one of yttrium-iron garnet, thulium-iron garnet, LaSrFeMnO, F 2 O 3 , Fe 3 O 4 , or LaYFeO.
6. The microelectronic device of claim 1 , wherein:
the gate stack is over a top surface of the semiconductor body; and
the insulator is in direct contact with at least one of a sidewall or bottom surface of at least a portion of the semiconductor body.
7. The microelectronic device of claim 1 , wherein the semiconductor body comprises an extended drain region between the channel portion and the drain; and the insulator is in direct contact with a bottom surface of semiconductor material below the extended drain region.
8. The microelectronic device of claim 1 , wherein the channel portion of the semiconductor body comprises a group III-V compound.
9. The microelectronic device of claim 1 , further comprising a conductive feature of an interconnect metallization level over the transistor, and coupled to the source, wherein the SOC material and the insulator clad the conductive feature.
10. The microelectronic device of claim 9 , wherein the SOC material is lining a trench in a dielectric material, the conductive feature is within the trench, with the insulator therebetween, wherein the insulator is in direct contact with a sidewall and a bottom surface of the conductive feature.