Nanowire stack GAA device with selectable numbers of channel strips
The current disclosure describes techniques for individually selecting the number of channel strips for a device. The channel strips are selected by defining a three-dimensional active region that include a surface active area and a depth/height. Semiconductor strips in the active region are selected as channel strips. Semiconductor strips contained in the active region will be configured to be channel strips. Semiconductor strips not included in the active region are not selected as channel strips and are separated from source/drain structures by an auxiliary buffer layer.
1. A method, comprising:
receiving a wafer, the wafer including a stack of epitaxial layers over a substrate, the stack of epitaxial layers including a plurality of semiconductor epitaxial layers and a plurality of buffer epitaxial layers stacked in an alternating sequence;
forming a fin structure by patterning the wafer, the fin structure including a stack of a plurality of semiconductor strips and a plurality of buffer strips stacked in the alternating sequence, the plurality of semiconductor strips including a first semiconductor strip and a second semiconductor strip that is stacked between the first semiconductor strip and the substrate;
forming a recess that recedes the first semiconductor strip, a bottom surface of the recess extending downwardly below the first semiconductor strip;
forming an auxiliary buffer layer over the bottom surface of the recess, the auxiliary buffer layer extending upwardly beyond the second semiconductor in the recess;
forming a source/drain structure at least partially within the recess;
releasing the first semiconductor strip by removing a buffer strip adjacent to the first semiconductor strip; and
forming a gate structure surrounding the first semiconductor strip.
2. The method of claim 1 , further comprising doping the auxiliary buffer layer with a different doping type from that of the source/drain structure.
3. The method of claim 2 , wherein the forming the recess exposes the second semiconductor strip.
4. The method of claim 2 , wherein the forming the recess recedes the second semiconductor strip to form a receded second semiconductor strip; and
wherein the auxiliary buffer layer is formed laterally covering the receded second semiconductor strip.
5. A method, comprising:
forming a stack of layers including a first semiconductor layer and a second semiconductor layer over a substrate, the first semiconductor layer being positioned over the second semiconductor layer in a first direction;
forming a gate structure wrapping around the first semiconductor layer and the second semiconductor layer;
forming a source/drain structure connected to the first semiconductor layer from a second direction that is different from the first direction; and
forming a first buffer layer separating the source/drain structure from the second semiconductor layer.
6. The method of claim 5 , wherein the forming the first buffer layer includes forming the first buffer layer of a semiconductor material different from that of the second semiconductor layer.
7. The method of claim 5 , wherein the forming the first buffer layer includes forming the first buffer layer of a dielectric material.
8. The method of claim 5 , wherein the second semiconductor layer is positioned at least partially between the source/drain structure and the substrate in the first direction.
9. The method of claim 5 , wherein the first buffer layer is positioned at least partially between the source/drain structure and the substrate in the first direction and is adjacent to the second semiconductor layer in the second direction.
10. The method of claim 5 , further comprising forming a second buffer layer positioned between the first buffer layer and the substrate in the first direction, the second buffer layer having a larger thickness in the first direction than the first buffer layer.
11. The method of claim 5 , further comprising forming a second buffer layer below the first buffer layer, the second buffer layer having a different material from that of the first buffer layer.
12. The method of claim 5 , wherein the first buffer layer has a thickness in the first direction larger than a thickness of the second semiconductor layer.
13. The method of claim 5 , wherein the first buffer layer has a different doping type from that of the source/drain structure.
14. The method of claim 5 , wherein the first semiconductor layer is undoped.
15. A method, comprising:
forming a stack of layers including a first semiconductor layer and a second semiconductor layer over a substrate, the first semiconductor layer being positioned over the second semiconductor layer in a first direction;
forming a recess in the stack of layers thereby exposing an edge surface of the first semiconductor layer;
forming a first buffer layer in the recess and covering the second semiconductor layer;
forming a gate structure wrapping around the first semiconductor layer; and
forming a source/drain structure in the recess and over the first buffer layer, the source/drain structure in contact with the edge surface of the first semiconductor layer.
16. The method of claim 15 , wherein the gate structure wraps around the second semiconductor layer.
17. The method of claim 15 , wherein the forming the recess includes forming the recess that terminates before reaching the second semiconductor layer.
18. The method of claim 17 , wherein the first buffer layer is positioned between the source/drain structure and the second semiconductor layer in the first direction.
19. The method of claim 15 , wherein the forming the recess includes forming the recess that exposes an edge surface of the second semiconductor layer.
20. The method of claim 15 , wherein the first buffer layer forms a P-N junction at an interface with the source/drain structure.