Method of creating structure for particle detection in time projection chambers and photodetectors
Time projection chambers are useful for high energy particle physics, nuclear physics, and astronomy. To enhance the particle detection efficiency and performance of the projection chambers functional bilayer thin film coatings based on the atomic layer deposition method are utilized. Coating material selection is based on Auger neutralization process ion induced electron emission from metallic surfaces (e.g., Mo or W) combined with a high secondary electron emission coefficient. Application of high secondary electron emission materials (e.g., MgO and CaF2) enhances the multiplication of these emitted electrons from ion induction processes. Therefore, using suitable bilayer coatings the overall TPC signal detection efficiency can be increased.
1. A method of forming a secondary electron emissive coating comprising:
providing a wire mesh substrate within an atomic layer deposition reactor; and
depositing a coating of Mo or W by an atomic layer deposition process including at least one cycle of:
pulsing a first metal precursor selected from the group consisting of molybdenum(V) chloride, tunsten(V) chloride, (bicyclo[2.2.1]hepta-2,5-diene)tetracarbonylmolybdenum(0) bis(cyclopentadienyl)molybdenum(IV) dichloride, tungsten diazabutadiene, molebdenum diazabutadiene, Molybdenum(VI) Dioxide bis(2,2,6,6-tetramethyl-3,5-heptanedionate) Molybdenumhexacarbonyl, Cyclopentadienylmolybdenum(II) tricarbonyl, Bis(tert-butylimino)bis(tert-butylamino)tungsten, Tungsten hexacarbonyl, Tetracarbonyl(1,5-cyclooctadiene)tungsten(0), Bis(isopropylcyclopentadienyl)tungsten(IV) dihydride, Bis(t-butylimido)bis(dimethylamino)molybdenum(VI), Bis(ethylbenzene)molybdenum, Cycloheptatriene molybdenum tricarbonyl a W or Mo precursor into the reactor for a first metal precursor pulse time, forming a first adsorbed entity on the substrate;
purging the reactor of the first metal precursor;
pulsing a first reducing precursor selected from the group consisting of SiH 4 , H 2 , NH 3 , Si 2 H 6 , hydrazine, TMA, B 2 H 6 into the reactor for a second precursor pulse time, the second precursor reacting with the first adsorbed entity; and
purging the reactor of the co-reactant precursor.
2. The method of claim 1 , wherein the wire mesh substrate is stainless steel.
3. The method of claim 1 , wherein the wire mesh substrate comprises wires having a spacing therebetween of 20-100 microns.
4. The method of claim 3 , the wire mesh has a wire diameter of 10-50 microns.
5. The method of claim 1 , further comprising:
after the first ALD deposition, depositing a topcoat by a second ALD deposition including at least one cycle of:
pulsing a second metal precursor comprising a magnesium ALD precursor for a second metal precursor pulse time, forming a second adsorbed entity on the W or Mo coating;
purging the reactor of the second metal precursor;
pulsing an oxidizing precursor into the reactor for a oxidizing precursor pulse time, the oxidizing precursor reacting with the first adsorbed entity; and
purging the reactor of the co-reactant precursor.
6. The method of claim 5 , wherein depositing the W or Mo coating has a thickness of about 5-1000 nm.
7. The method of claim 5 , wherein depositing the top coat comprises a thickness of at least 1-100 nm.
8. The method of claim 5 , wherein the second metal precursor is selected from the group consisting of magnesocene (Mg(Cp) 2 ), Mg(C 5 H 5 ) 2 , Mg(C 5 H 4 Me) 2 , Mg(C 5 H 4 Et) 2 , octamethyl magnesum-dialuminum (MgAl 2 (CH 3 ) 8 ), magnesium borohydride (Mg(BH 4 ) 2 ), bis(ketoiminato)magnesium(II) complexes of composition [Mg(OCR 2 CH 2 CHR 1 NCH 2 CH 2 X) 2 ] (X=NMe 2 : R 1 =R 2 =Me; R 1 =Me, R 2 =Ph. X=OMe; R 1 =R 2 =Me), [MgMe(OtBu)] 4 , Mg(dmto) 2 , Mg(tmhd) 2 (tmeda), [Mg(tmhd) 2 ] 2 , and Mg(acac) 2 .
9. The method of claim 5 , further comprising a third ALD deposition depositing a dopant consisting of TiO2 or MgF2 in the topcoat.
10. A method of forming a secondary electron emissive coating comprising:
providing a wire mesh substrate within an atomic layer deposition reactor; and
depositing a coating of Mo or W by an atomic layer deposition process including at least one cycle of:
pulsing a first metal precursor selected from the group consisting of molybdenum(V) chloride, tunsten(V) chloride, (bicyclo[2.2.1]hepta-2,5-diene)tetracarbonylmolybdenum(0) bis(cyclopentadienyl)molybdenum(IV) dichloride, tungsten diazabutadiene, molebdenum diazabutadiene, Molybdenum(VI) Dioxide bis(2,2,6,6-tetramethyl-3,5-heptanedionate) Molybdenumhexacarbonyl, Cyclopentadienylmolybdenum(II) tricarbonyl, Bis(tert-butylimino)bis(tert-butylamino)tungsten, Tungsten hexacarbonyl, Tetracarbonyl(1,5-cyclooctadiene)tungsten(0), Bis(isopropylcyclopentadienyl)tungsten(IV) dihydride, Bis(t-butylimido)bis(dimethylamino)molybdenum(VI), Bis(ethylbenzene)molybdenum, Cycloheptatriene molybdenum tricarbonyl a W or Mo precursor into the reactor for a first metal precursor pulse time, forming a first adsorbed entity on the substrate;
purging the reactor of the first metal precursor;
pulsing a first reducing precursor selected from the group consisting of SiH 4 , Hz, NH 3 , Si 2 H 6 , Hydrazine, TMA, B 2 H 6 into the reactor for a second precursor pulse time, the second precursor reacting with the first adsorbed entity; and
purging the reactor of the co-reactant precursor; and
depositing a topcoat by a second ALD deposition including at least one cycle of:
pulsing a second metal precursor comprising a magnesium ALD precursor for a second metal precursor pulse time, forming a second adsorbed entity on the W or Mo coating;
purging the reactor of the second metal precursor;
pulsing an oxidizing precursor into the reactor for a oxidizing precursor pulse time, the oxidizing precursor reacting with the first adsorbed entity; and
purging the reactor of the co-reactant precursor.
11. The method of claim 10 , wherein depositing the W or Mo coating has a thickness of about 5-1000 nm.
12. The method of claim 11 , wherein depositing the top coat comprises a thickness of at least 1-100 nm.
13. The method of claim 10 , wherein the second metal precursor is selected from the group consisting of magnesocene (Mg(Cp) 2 ), Mg(C 5 H 5 ) 2 , Mg(C 5 H 4 Me) 2 , Mg(C 5 H 4 Et) 2 , octamethyl magnesum-dialuminum (MgAl 2 (CH 3 ) 8 ), magnesium borohydride (Mg(BH 4 ) 2 ), bis(ketoiminato)magnesium(II) complexes of composition [Mg(OCR 2 CH 2 CHR 1 NCH 2 CH 2 X) 2 ] (X=NMe 2 : R 1 =R 2 =Me; R 1 =Me, R 2 =Ph. X=OMe; R 1 =R 2 =Me), [MgMe(OtBu)] 4 , Mg(dmto) 2 , Mg(tmhd) 2 (tmeda), [Mg(tmhd) 2 ] 2 , and Mg(acac) 2 .
14. The method of claim 10 , wherein the wire mesh substrate is stainless steel.
15. The method of claim 10 , wherein the wire mesh substrate comprises wires having a spacing therebetween of 20-100 microns.
16. The method of claim 10 , the wire mesh has a wire diameter of 10-50 microns.