IP Library › Granted Patent US 11,415,819
Granted Patent B2
US 11,415,819 · App. 16/860,527 · Granted Aug 16, 2022

Beam steering apparatus and system including the same

Inventors: Duhyun Lee (Yongin-si, KR); Bochul Park (Seoul, KR); Sunil Kim (Osan, KR); Junghyun Park (Seoul, KR); Byunggil Jeong (Anyang-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G02F1/01708B82Y10/00B82Y20/00G02B6/12G02B6/34G02F3/026G02B2006/12078G02F1/01791
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Quick Facts
Patent No.
US 11,415,819
App. No.
16/860,527
Granted
Aug 16, 2022
Kind
B2
Abstract

A beam steering apparatus includes a substrate; at least one light source provided on the substrate; a first waveguide configured to transmit a first light beam radiated from the at least one light source; at least one beam splitter configured to split the first light beam transmitted by the first waveguide to obtain a second light beam; a second waveguide configured to receive the second light beam; and a quantum dot optical amplifier provided on the second waveguide and comprising a barrier layer, a quantum dot layer, and a wetting layer, the quantum dot optical amplifier being configured to modulate a phase of the second light beam, and to amplify an intensity of the second light beam.

Claims (36)

1. A beam steering apparatus comprising:

a substrate;

at least one light source provided on the substrate;

a first waveguide configured to transmit a first light beam radiated from the at least one light source;

at least one beam splitter configured to split the first light beam transmitted by the first waveguide to obtain a second light beam;

a second waveguide configured to receive the second light beam; and

a quantum dot optical amplifier provided on the second waveguide and comprising a barrier layer, a quantum dot layer, and a wetting layer, the quantum dot optical amplifier being configured to modulate a phase of the second light beam, and to amplify an intensity of the second light beam.

2. The beam steering apparatus of claim 1 , wherein the quantum dot optical amplifier further comprises a first electrode layer provided on the barrier layer and a second electrode layer provided on the wetting layer.

3. The beam steering apparatus of claim 2 , further comprising a first spacer provided between the barrier layer and the first electrode layer, and a second spacer provided between the wetting layer and the second electrode layer.

4. The beam steering apparatus of claim 1 , wherein the quantum dot optical amplifier further is configured to modulate the phase of the second light beam and amplify the intensity of the second light beam based on a current applied to the quantum dot optical amplifier, the current ranging from 0.1×I th to 1×I th , where I th is a threshold current.

5. The beam steering apparatus of claim 1 , wherein, based on a charge supply to the quantum dot optical amplifier reaching a certain level or higher, a carrier density of the quantum dot layer in a ground state is saturated and a substantially constant gain of the quantum dot optical amplifier is maintained, and

wherein, based on an increase of a carrier density of the wetting layer, the wetting layer has a refractive index that is changed, upon which the phase of the second light beam is modulated.

6. The beam steering apparatus of claim 1 , wherein the quantum dot layer comprises a Group III-V semiconductor material.

7. The beam steering apparatus of claim 1 , wherein the quantum dot layer comprises InAs.

8. The beam steering apparatus of claim 1 , wherein the wetting layer comprises In 0.15 GaAs.

9. The beam steering apparatus of claim 1 , wherein, in the quantum dot optical amplifier, the barrier layer, the quantum dot layer, and the wetting layer are repeatedly stacked 2 to 30 times.

10. The beam steering apparatus of claim 1 , further comprising an antenna provided on an end portion of the second waveguide, the second waveguide extending from the quantum dot optical amplifier.

11. A system comprising:

a beam steering apparatus comprising:

a substrate;

at least one light source provided on the substrate;

a first waveguide configured to transmit a first light beam radiated from the at least one light source;

at least one beam splitter configured to split the first light beam transmitted by the first waveguide to obtain a second light beam;

a second waveguide configured to receive the second light beam; and

a quantum dot optical amplifier provided on the second waveguide and comprising a barrier layer, a quantum dot layer, and a wetting layer, the quantum dot optical amplifier being configured to modulate a phase of the second light beam, configured to amplify an intensity of the second light beam;

a receiver configured to receive the second light beam radiated from the beam steering apparatus toward an object and reflected therefrom; and

a processor configured to classify and process a plurality of light beams irradiated toward the object in a plurality of directions based on at least one of a distribution-by-location and a distribution-by-time of the second light beam received by the receiver.

12. The system of claim 11 , wherein the quantum dot optical amplifier further comprises a first electrode layer provided on the barrier layer and a second electrode layer provided on the wetting layer.

13. The system of claim 12 , wherein the beam steering apparatus further comprises a first spacer provided between the barrier layer and the first electrode layer, and a second spacer provided between the wetting layer and the second electrode layer.

14. The system of claim 11 , wherein the quantum dot optical amplifier is further configured to modulate the phase of the second light beam and amplify the intensity of the second light beam based on a current applied to the quantum dot optical amplifier, the current ranging from 0.1×I th to 1×I th , where I th is a threshold current.

15. The system of claim 11 , wherein, based on a charge supply to the quantum dot optical amplifier reaching a certain level or higher, a carrier density of the quantum dot layer in a ground state is saturated and a substantially constant gain of the quantum dot optical amplifier is maintained, and

wherein, based on an increase of a carrier density of the wetting layer, the wetting layer has a refractive index that is changed, upon which the phase of the second light beam is modulated.

16. The system of claim 11 , wherein the quantum dot layer comprises a Group III-V semiconductor material.

17. The system of claim 11 , wherein the quantum dot layer comprises InAs.

18. The system of claim 11 , wherein the wetting layer comprises In 0.15 GaAs.

19. The system of claim 11 , wherein, in the quantum dot optical amplifier, the barrier layer, the quantum dot layer, and the wetting layer are repeatedly stacked 2 to 30 times.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 28, 2020
From: LEE, DUHYUN; PARK, BOCHUL; KIM, SUNIL; PARK, JUNGHYUN; JEONG, BYUNGGIL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 052514/0585 →
Priority Claims (1)
KR 10-2019-0149879 · Nov 20, 2019 · national
Continuity (1)
Related Publication 20210149227A1 · May 20, 2021