Scan optimization from stacking multiple reliability specifications
A variety of applications can include systems and/or methods of optimizing results from scanning a memory device, where the memory device has stacked multiple reliability specifications. Information about a block of multiple blocks of a memory device can be logged, where the information is associated with a combination of reliability specifications. A refresh of the block can be triggered based on exceeding a threshold condition for the combination of reliability specifications.
1. A system comprising:
a memory system including:
multiple memory devices; and
a processing device coupled to the multiple memory devices, the processing device to cause the memory system to perform operations, the operations comprising:
refraining from refreshing a block of multiple blocks of a memory device of the multiple memory devices upon determining a failed scan of the block without information regarding a source of the failed scan, until a threshold condition other than the failed scan is exceeded; and
triggering a refresh of the block based on exceeding, for multiple scans conducted since the block was last refreshed, the threshold condition for at least one reliability specification of a combination of reliability specifications for the memory device.
2. The system of claim 1 , wherein the combination of reliability specifications is associated with one or more of a scan error, a bit rate error over time, a bit rate error over temperature, or a total number of data errors.
3. The system of claim 1 , wherein the combination of reliability specifications includes two or more specifications selected from a data retention specification, a cross temperature delta specification, a number of program erase cycles specification, and a number of read cycles specification.
4. The system of claim 1 , wherein operations include operations to log operational data, the operational data including an amount of time after the block is opened, a number of scans after a last refresh, or both the amount of time after the block is opened and the number of scans after a last refresh.
5. The system of claim 1 , wherein the combination of reliability specifications includes a cross temperature delta specification.
6. The system of claim 5 , wherein a threshold condition to trigger the refresh for the cross temperature delta specification includes a threshold power-on time when the block fails a scan with a determined cross temperature delta exceeding a threshold cross temperature delta.
7. The system of claim 5 , wherein operations to trigger the refresh of the block include a trigger of a refresh of the block in response to the block having a non-zero erase count and failing a scan with the cross temperature delta exceeding a threshold cross temperature delta, with a current determined power-on time exceeding a threshold power-on time.
8. The system of claim 5 , wherein operations to trigger the refresh of the block include a trigger of a refresh of the block in response to the block having a non-zero erase count and failing a scan with the cross temperature delta exceeding a threshold cross temperature delta for a multiple number of scans.
9. A system comprising:
a memory device in a memory system, the memory device having an array of memory cells organized into multiple blocks;
a memory controller, in the memory system, coupled to the memory device, the memory controller to control the memory device to perform operations, the operations comprising:
refraining from refreshing a block of the multiple blocks upon determining a failed scan of the block without information regarding a source of the failed scan, until a threshold condition other than the failed scan is exceeded; and
triggering a refresh of the block based on exceeding, for multiple scans conducted since the block was last refreshed, the threshold condition for at least one reliability specification of a combination of reliability specifications for the memory device.
10. The system of claim 9 , the system includes a temperature sensor to measure temperatures associated with writing data to the memory device and reading the data from the memory device.
11. The system of claim 9 , wherein the operations include logging operational data, the operational data including an amount of time after the block is opened, a number of scans after a last refresh, or both the amount of time after the block is opened and the number of scans after a last refresh.
12. The system of claim 11 , wherein the system includes a non-transitory storage device having firmware to control the operations to log the operational data, refrain from conducting a refresh, and trigger the refresh of the block, with the non-transitory storage device being disposed in the memory system separate from the memory controller.
13. The system of claim 9 , wherein the combination of reliability specifications includes a cross temperature delta specification.
14. The system of claim 13 , wherein triggering the refresh of the block includes triggering a refresh of the block in response to the block having a non-zero erase count and failing a scan with the cross temperature delta exceeding a threshold cross temperature delta for a multiple number of scans.
15. The system of claim 13 , wherein a threshold parameter for the cross temperature delta specification includes a number of scans executed with the cross temperature delta exceeding the threshold cross temperature delta since a last refresh of the block.
16. The system of claim 15 , the number of scans is updatable in a memory location in the system accessible by the memory controller.
17. A method of operating on a memory device comprising:
refraining from refreshing a block of multiple blocks of the memory device upon determining a failed scan of the block without information regarding a source of the failed scan, until a threshold condition other than the failed scan is exceeded; and
triggering a refresh of the block based on exceeding, for multiple scans conducted since the block was last refreshed, the threshold condition for at least one reliability specification of a combination of reliability specifications for the memory device.
18. A method of operating on a memory device comprising:
refraining from refreshing a block of multiple blocks of the memory device upon determining a failed scan of the block without information regarding a source of the failed scan, until a threshold condition other than the failed scan is exceeded;
triggering a refresh of the block based on exceeding the threshold condition for at least one reliability specification of a combination of reliability specifications for the memory device;
using a cross temperature delta specification of the memory device in the combination of reliability specifications for the memory device; and
logging operational data associated with the cross temperature delta specification, the operational data including an amount of time after the block is opened, a number of scans after a last refresh of the block, or both the amount of time after the block is opened and the number of scans after a last refresh of the block.
19. The method of claim 18 , wherein the method includes triggering the refresh of the block based on exceeding a threshold condition for the cross temperature delta specification with the threshold condition including a threshold power-on time when the block fails a scan with a determined cross temperature delta exceeding a threshold cross temperature delta.
20. The method of claim 18 , wherein the method includes triggering the refresh of the block based on exceeding a threshold condition for the cross temperature delta specification with the threshold condition including a threshold number of scans after a last refresh when the block fails a scan with a determined cross temperature delta exceeding a threshold cross temperature delta, the block having an erase count equal to an erase count of a last scan.