Ceramics substrate, method of manufacturing the same, electrostatic chuck, substrate fixing device, and semiconductor device package
A ceramics substrate includes: a substrate body; an electric conductor layer that is built in the substrate body; and a via that is built in the substrate body to be electrically connected to the electric conductor layer. The substrate body is made of ceramics containing aluminum oxide. The via is made of a fired body of an electric conductor paste. The electric conductor paste contains molybdenum as a main component and further contains nickel oxide, aluminum oxide, and silicon dioxide.
1. A ceramics substrate comprising:
a substrate body;
an electric conductor layer that is built in the substrate body; and
a via that is built in the substrate body to be electrically connected to the electric conductor layer,
wherein:
the substrate body is made of ceramics containing aluminum oxide; and
the via is made of a fired body of an electric conductor paste, wherein the electric conductor paste contains molybdenum as a main component and further contains nickel oxide, aluminum oxide, and silicon dioxide.
2. The ceramics substrate according to claim 1 , wherein
in the electric conductor paste, a content of the nickel oxide is 0.2 wt % to 1.0 wt % with respect to the molybdenum.
3. The ceramics substrate according to claim 1 , wherein
in the electric conductor paste,
a content of the aluminum oxide is 2.0 wt % to 20.0 wt % with respect to the molybdenum, and
a content of the silicon dioxide is 0.2 wt % to 3.0 wt % with respect to the molybdenum.
4. The ceramics substrate according to claim 1 , wherein
in the electric conductor paste,
an average particle size of the molybdenum is 0.5 μm to 3.0 μm,
an average particle size of the nickel oxide is 5.0 μm to 15.0 μm,
an average particle size of the aluminum oxide is 0.1 μm to 4.0 μm, and
an average particle size of the silicon dioxide is 0.1 μm to 12.0 μm.
5. The ceramics substrate according to claim 1 , wherein
the substrate body contains silicon but does not contain molybdenum and nickel.
6. The ceramics substrate according to claim 5 , wherein
the silicon contained in the substrate body is present only within a range of 20 μm from a boundary between the substrate body and the via.
7. The ceramics substrate according to claim 6 , wherein
a composite oxide layer containing oxygen, aluminum and silicon is formed within the range of 20 μm from the boundary between the substrate body and the via.
8. The ceramics substrate according to claim 7 , wherein
the composite oxide layer contains at least one of a mullite layer and a sillimanite layer.
9. The ceramics substrate according to claim 1 , wherein
purity of the aluminum oxide in the substrate body is 99.5% or more.
10. The ceramics substrate according to claim 1 , wherein
a relative density of the substrate body to the aluminum oxide is 97% or more.
11. The ceramics substrate according to claim 1 , wherein
an average particle size of the aluminum oxide in the substrate body is 1.0 μm to 3.0 μm.
12. The ceramics substrate according to claim 1 , wherein
the electric conductor layer is made of a fired body of an electric conductor paste, wherein the electric conductor paste contains tungsten as a main component and further contains nickel oxide, aluminum oxide and silicon dioxide.
13. The ceramics substrate according to claim 1 , wherein
the ceramics substrate is an electrostatic chuck that is configured to adsorb an object, and
the electric conductor layer is an electrostatic electrode.
14. A semiconductor device package comprising the ceramics substrate according to claim 1 .
15. A substrate fixing device comprising:
a base plate; and
the ceramics substrate according to claim 13 that is mounted on one face of the base plate.