Post-passivation interconnect structure

1. A semiconductor device, comprising:

a substrate comprising a plurality of metal layers adjacent dielectric layers;

an interconnect structure overlying the substrate, the interconnect structure comprising a conductive element and a plurality of dummy conductive elements, wherein the conductive element and the dummy conductive elements are electrically separated;

a layer overlying the interconnect structure and comprising a first opening exposing a portion of the conductive element and a second opening exposing at least a portion of each of the plurality of dummy conductive elements;

a metal layer comprising a first portion on a topmost surface of the layer and on the exposed portion of the conductive element and a plurality of second portions on the topmost surface of the layer and on the exposed portion of the dummy conductive element, the plurality of second portions of the metal layer being electrically separated from the first portion of the metal layer; and

a single bump on the first portion of the metal layer overlying the conductive element;

wherein each of the plurality of dummy conductive elements adjoins with a respective one of the plurality of second portions of the metal layer to from a plurality of pillars, the plurality of pillars surrounding the single bump in a plan view, and wherein an only bump surrounded by the plurality of pillars is the single bump.

2. The semiconductor device of claim 1 , wherein the interconnect structure further includes an interconnect line region coupled to the conductive element.

3. The semiconductor device of claim 2 , wherein the interconnect line region traverses between a first and a second of the plurality of pillars in the plan view.

4. The semiconductor device of claim 1 , wherein the metal layer comprises at least one of a titanium layer, a copper layer, or a nickel layer.

5. The semiconductor device of claim 1 , wherein the conductive element and the plurality of dummy conductive elements of the interconnect structure include a copper layer.

6. The semiconductor device of claim 1 , wherein the layer comprises a plurality of second openings adjacent to the first opening, and the plurality of second portions of the metal layer fills the plurality of second openings.

7. The semiconductor device of claim 1 , wherein the layer includes a polymer.

8. The semiconductor device of claim 1 , further comprising a passivation layer over the substrate and underlying the interconnect structure.

9. The semiconductor device of claim 1 , wherein each of the plurality of pillars is a square shape.

10. The semiconductor device of claim 9 , wherein each of the plurality of pillars has with a length of at least 5 pm, the length measured in the plan view.

11. The semiconductor device of claim 1 , wherein each of the plurality of pillars is spaced from an adjacent one of the plurality of pillars by at least 5 μm.

12. The semiconductor device of claim 11 , wherein a distance between one of the plurality of pillars and the first portion of the metal layer is greater than 10 μm.

13. A semiconductor device, comprising:

a semiconductor substrate having a post-passivation interconnect (PPI) structure including an interconnect line, a landing pad and a plurality of dummy regions, wherein the plurality of dummy regions is electrically separated from the interconnect line and the landing pad formed thereover;

an under-bump-metallization (UBM) layer formed on the landing pad;

a plurality of metal pillars each electrically separated from one another; and

a single bump on the UBM layer, wherein the plurality of metal pillars each being spaced a same distance from the single bump.

14. The semiconductor device of claim 13 , wherein the plurality of metal pillars surround the single bump in a plan view, and wherein the semiconductor device further includes another bump spaced a distance from the single bump.

15. The semiconductor device of claim 13 , wherein the plurality of metal pillars comprises at least one of a titanium layer, a copper layer, or a nickel layer.

16. The semiconductor device of claim 13 , further comprising a polymer layer over the interconnect line.

17. The semiconductor device of claim 16 , wherein the metal pillars extend through the polymer layer.

18. A semiconductor device, comprising:

a plurality of metal layers formed between dielectric layers formed over a semiconductor substrate;

a first landing pad conductive element and a first plurality of dummy conductive elements over the plurality of metal layers, wherein each of the first plurality of dummy conductive elements are electrically separated from each other and electrically separated from the first landing pad conductive element;

a layer disposed over the first plurality of dummy conductive elements;

a first plurality of metal pillars each disposed in an opening in the layer, wherein the first plurality of metal pillars are electrically separated from each other and electrically separated from the first landing pad conductive element; and

a first bump on the first landing pad conductive element, wherein the first plurality of metal pillars surrounds the first bump in a plan view.

19. The semiconductor device of claim 18 , further comprising: a second bump having a second plurality of metal pillars surrounding the second bump in the plan view.

20. The semiconductor device of claim 18 , wherein the first plurality of metal pillars surrounding the first bump are each spaced a first distance from the first bump.