Micro LED display and manufacturing method with conductive film
A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.
1. A method for manufacturing a light-emitting diode (LED) display, the method comprising:
bonding an anisotropic conductive film including a plurality of conductive particles onto a surface of a substrate including a circuit part;
forming a bonding layer on the anisotropic conductive film;
positioning a plurality of micro LED chips on the bonding layer, the plurality of micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate;
attaching the plurality of micro LED chips onto the bonding layer using a laser; and
forming a conductive structure for electrically connecting a connection pad of a micro LED to the circuit part through the plurality of conductive particles by heating and pressurizing,
wherein the plurality of conductive particles is arranged at an equal interval in the anisotropic conductive film.
2. The method of claim 1 , wherein each of the plurality of conductive particles includes a diameter that is equal to or shorter than 5.5 micrometers.
3. The method of claim 1 , wherein the bonding layer is applied to an entire portion of the anisotropic conductive film or a periphery of the circuit part.
4. The method of claim 1 , wherein the first distance is equal to or shorter than 150 micrometers.
5. The method of claim 1 , wherein attaching the plurality of micro LED chips comprises jetting the plurality of micro LED chips to the bonding layer using a laser ablation.
6. The method of claim 1 , wherein the bonding layer is a tacky layer that absorbs kinetic energy of the plurality of attached micro LED chips separated from the carrier substrate and temporally fixes the plurality of attached micro LED chips.
7. The method of claim 1 , wherein the plurality of conductive particles includes one of Cu, Ni, Au, or Ag.
8. The method of claim 1 , wherein the laser or the substrate is movable in left or right directions, or forward or backward directions.
9. The method of claim 1 , wherein the carrier substrate includes a wavelength capable of transmitting the laser.
10. The method of claim 1 , wherein the plurality of conductive particles positioned between the connection pad and the circuit part is plastically deformed by a pressurization process of a chuck.
11. The method of claim 1 , wherein each of the substrate and the carrier substrate is made of one of a glass, a ceramic, or a synthetic resin.
12. The method of claim 1 , wherein a second distance between each of the plurality of conductive particles is equal to or shorter than 50 micrometers.
13. The method of claim 1 , wherein the plurality of conductive particles arranged between the connection pad and the circuit part comprises metal particles plastically deformed.
14. The method of claim 1 , wherein the plurality of conductive particles arranged in an area other than between the connection pad and the circuit part comprises metal particles shaped as a ball or a flake.
15. The method of claim 1 , further comprising a bonding strength reinforcing structure disposed on the anisotropic conductive film while surrounding each of the plurality of micro LED chips.
16. The method of claim 1 , wherein each of the plurality of micro LED chips is disposed on the surface of the substrate in a connection pad-down state.