Method for preparing semiconductor device with air gap structure
The present application discloses a method for preparing a semiconductor device with an air gap structure between conductive structures. The method includes: forming a first bit line, a second bit line, a first capacitor contact and a second capacitor contact over a semiconductor substrate, wherein the first capacitor contact and the second capacitor contact are disposed between the first bit line and the second bit line; forming a first dielectric layer over a sidewall of the first bit line, a sidewall of the second bit line, a sidewall of the first capacitor contact and a sidewall of the second capacitor contact such that an opening is formed and surrounded by the first dielectric layer; filling the opening with a dielectric structure; and removing the first dielectric layer to form an opening structure surrounding the dielectric structure.
1. A method for preparing a semiconductor device, comprising:
forming a first bit line, a second bit line, a first capacitor contact and a second capacitor contact over a semiconductor substrate, wherein the first capacitor contact and the second capacitor contact are disposed between the first bit line and the second bit line;
forming a first dielectric layer over a sidewall of the first bit line, a sidewall of the second bit line, a sidewall of the first capacitor contact and a sidewall of the second capacitor contact such that an opening is formed and surrounded by the first dielectric layer;
filling the opening with a dielectric structure;
removing the first dielectric layer to form an opening structure surrounding the dielectric structure; and
forming a second dielectric layer covering the opening structure to form an air gap structure, wherein the second dielectric layer is formed by a spin-coating process, and a portion of the second dielectric layer extends into the air gap structure.
2. The method for preparing a semiconductor device of claim 1 , wherein the sidewall of the first bit line faces the sidewall of the second bit line, and the sidewall of the first capacitor contact faces the sidewall of the second capacitor contact.
3. The method for preparing a semiconductor device of claim 1 , wherein the first dielectric layer has a high etching selectivity against the dielectric structure during the removal of the first dielectric layer.
4. The method for preparing a semiconductor device of claim 1 , wherein a top surface of the dielectric structure is higher than or level with a top surface of the first bit line.
5. The method for preparing a semiconductor device of claim 1 , wherein the first dielectric layer is removed by a vapor phase hydrofluoric acid (VHF) etching process, and wherein the first dielectric layer is made of phosphosilicate glass (PSG).
6. The method for preparing a semiconductor device of claim 1 , wherein a top surface of the semiconductor substrate is exposed by the opening structure.
7. The method for preparing a semiconductor device of claim 1 , further comprising: forming a conductive via over the first capacitor contact; and forming a storage node over the conductive via, wherein the storage node is electrically connected to the first capacitor contact through the conductive via, and a portion of the storage node is directly over the aft gap structure.