Organic light emitting display substrate and panel with photodetector for light compensation of subpixel

1. A display substrate, comprising:

a substrate that is divided into a plurality of subpixel areas,

a drive transistor and a photodetector in each of the plurality of subpixel areas, and

an insulation layer on the photodetector,

wherein:

the drive transistor comprises an electrode layer comprising a source electrode and a drain electrode,

the photodetector is coupled to one of the source electrode and the drain electrode, and

an entirety of an orthographic projection of the insulation layer on the substrate is within an orthographic projection of the electrode layer on the substrate.

2. A display panel, comprising:

a cover panel, and

a back panel,

wherein one of the cover panel and the back panel comprises the display substrate according to claim 1 .

3. The display panel according to claim 2 , wherein:

the cover panel comprises the display substrate, a black matrix layer on the drive transistor of the display substrate, a color filter layer on the photodetector of the display substrate, a support on the black matrix layer, and a second auxiliary cathode on the support,

the back panel comprises an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer, and

the cathode of the back panel is joined to the second auxiliary cathode of the cover panel, so as to join the back panel to the cover panel.

4. The display panel according to claim 3 , wherein an entirety of an orthographic projection of the photodetector on the substrate is inside an orthographic projection of the color filter layer on the substrate.

5. The display panel according to claim 3 , wherein:

the cover panel further comprises a first auxiliary cathode between the black matrix layer and the support,

the first auxiliary cathode is electrically coupled to the second auxiliary cathode,

the first auxiliary cathode is composed of a metal, and

the second auxiliary cathode is composed of a transparent conductive material.

6. The display panel according to claim 3 , wherein the cathode of the back panel is composed of a same or different transparent conductive material from the second auxiliary cathode.

7. The display panel according to claim 2 , wherein:

the back panel comprises the display substrate, a color filter layer on the display substrate, an anode and an organic light emitting on the color filter layer, and a cathode on the organic light emitting layer, and

the cathode joins the back panel to the cover panel.

8. The display panel according to claim 7 , wherein an entirety of an orthographic projection of the photodetector on the substrate is inside an orthographic projection of the color filter layer on the substrate.

9. The display panel according to claim 7 , wherein:

the anode is composed of a transparent conductive material, and

the cathode is composed of a reflective metal.

10. A display device, comprising the display panel according to claim 2 .

11. The display substrate according to claim 1 , wherein:

the insulation layer comprises at least one first through-hole,

the display substrate further comprises a coupling electrode on the insulation layer, the coupling electrode being configured to couple the photodetector to an external circuit, and

the coupling electrode is coupled to the photodetector via the at least one first through-hole.

12. The display substrate according to claim 11 , wherein:

the display substrate further comprises a passivation layer between the insulation layer and the coupling electrode,

the passivation layer comprises at least one second through-hole, and

the coupling electrode is coupled to the photodetector via the at least one first through-hole and the at least one second through-hole.

13. The display substrate according to claim 11 , wherein each of the coupling electrode and the protective layer is composed of a transparent conductive material.

14. The display substrate according to claim 1 , wherein

the insulation layer is in contact with each of the photodetector, the source electrode, and the drain electrode, and

the insulation layer covers an entirety of a surface of the source electrode opposite from the substrate, and an entirety of a surface of the drain electrode opposite from the substrate.

15. The display substrate according to claim 1 , wherein:

the photodetector comprises a semiconductor layer on the substrate, and a protective layer on the semiconductor layer, and

an entirety of the orthographic projection of the semiconductor layer on the substrate is inside the orthographic projection of the protective layer on the substrate.

16. A method of fabricating a display substrate, the method comprising:

forming a layer of electrode layer forming material on a substrate,

forming a photodetector on the electrode forming layer,

forming a layer of insulation layer forming material on the photodetector and the layer of electrode layer forming material, and

performing a single patterning step to obtain an insulation layer and an electrode layer comprising a source electrode and a drain electrode,

wherein an entirety of an orthographic projection of the insulation layer on the substrate is inside an orthographic projection of the electrode layer on the substrate.

17. The method according to claim 16 , further comprising, before the forming of the layer of electrode layer forming material:

forming a light-shielding layer on the substrate,

forming a buffer layer on the light-shielding layer, and

forming an active layer on the buffer layer, a gate insulation layer on the active layer, a gate electrode on the gate insulation layer, and a dielectric layer on the gate electrode,

wherein an entirety of an orthographic projection of the active layer on the substrate is inside an orthographic projection of the light shielding layer on the substrate.

18. The method according to claim 17 , wherein the layer of electrode layer forming material is formed on the dielectric layer.

19. The method according to claim 16 , wherein the forming of the photodetector comprises forming a semiconductor layer and a protective layer on the layer of electrode layer forming material.

20. The method according to claim 16 , further comprising forming a passivation layer on the insulation layer,

wherein each of insulation layer and the passivation layer is formed with at least one through-hole.