Method of manufacturing semiconductor optical device and semiconductor optical device
Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.
1. A method of manufacturing a semiconductor optical device, comprising:
a first step of forming a semiconductor laminate in which a plurality of InGaAsP-based III-V compound semiconductor layers containing at least In and P are stacked, on an InP growth substrate;
a second step of forming a contact layer formed of a III-V compound semiconductor on the semiconductor laminate;
a third step of forming an ohmic metal portion on a part of the contact layer leaving an exposed area on a surface of the contact layer;
a fourth step of removing the contact layer of the exposed area, thereby forming a contact portion composed of the ohmic metal portion and the contact layer and forming an exposed surface of the semiconductor laminate;
a fifth step of forming a dielectric layer on at least a part of the exposed surface of the semiconductor laminate;
a sixth step of forming a reflective metal layer mainly containing Au on the dielectric layer and the contact portion;
a seventh step of bonding a conductive support substrate having a surface provided with a metal bonding layer to the reflective metal layer with the metal bonding layer interposed between the conductive support substrate and the reflective metal layer; and
an eighth step of removing the InP growth substrate,
wherein the conductive support substrate is a conductive Si substrate.
2. The method of manufacturing the semiconductor optical device, according to claim 1 , further comprising a grinding step of grinding the conductive support substrate to a thickness in a range of 80 μm or more and less than 200 μm.
3. The method of manufacturing the semiconductor optical device, according to claim 1 , wherein the semiconductor laminate includes an n-type cladding layer, an active layer, and a p-type cladding layer in this order.
4. The method of manufacturing the semiconductor optical device, according to claim 3 , wherein the semiconductor laminate has one of a double heterostructure and a multiple quantum-well structure.
5. The method of manufacturing the semiconductor optical device, according to claim 1 , wherein the dielectric layer is formed of SiO 2 .