Display device
Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.
1. A display device comprising:
a substrate having an active area and a bending area;
a first thin film transistor disposed in the active area, the first thin film transistor having a first semiconductor layer, a first source electrode, and a first drain electrode;
a second thin film transistor disposed in the active area, the second thin film transistor having a second semiconductor layer, a second source electrode, and a second drain electrode;
a first source contact hole and a first drain contact hole formed through at least one layer of an inorganic dielectric film disposed between a corresponding one of the first source electrode and the first drain electrode and the first semiconductor layer;
a second source contact hole and a second drain contact hole formed through at least one layer of an inorganic dielectric film disposed between a corresponding one of the second source electrode and the second drain electrode and the second semiconductor layer; and
at least one opening disposed in the bending area,
wherein the at least one opening comprises:
a first opening having a same depth as the second source contact hole and the second drain contact hole; and
a second opening having a greater depth than the first source contact hole and the first drain contact hole.
2. The display device according to claim 1 , further comprising:
an upper interlayer dielectric film disposed between each of the second source and second drain electrodes and the second semiconductor layer; and
a lower gate dielectric film, a first lower interlayer dielectric film, a second lower interlayer dielectric film, and an upper buffer layer sequentially stacked between the first semiconductor layer and the second semiconductor layer,
wherein the first source and first drain contact holes are formed through the lower gate dielectric film, the first lower interlayer dielectric film, the second lower interlayer dielectric film, the upper buffer layer, and the upper interlayer dielectric film in order to expose the first semiconductor layer, and
wherein the second source and second drain contact holes are formed through the upper interlayer dielectric film in order to expose the second semiconductor layer.
3. The display device according to claim 2 , further comprising:
a multi buffer layer disposed on the substrate; and
a lower buffer layer disposed on the multi buffer layer, wherein
the first opening is formed through the upper interlayer dielectric film disposed in the bending area,
the second opening is formed through the multi buffer layer, the lower buffer layer, the lower gate dielectric film, the first lower interlayer dielectric film, the second lower interlayer dielectric film, and the upper buffer layer disposed in the bending area, and
the substrate in the bending area is exposed through the first and second openings.
4. The display device according to claim 2 , wherein the first and second source electrodes are formed in a same plane as the first drain electrode and the second drain electrode on the upper interlayer dielectric film, and are made of a same material as the first drain electrode and the second drain electrode.
5. The display device according to claim 2 , further comprising:
a storage lower electrode disposed on the lower gate dielectric film; and
a storage upper electrode overlapping the storage lower electrode in a state in which the first lower interlayer dielectric film is disposed there between, wherein the storage lower electrode is formed in a same plane as a first gate electrode of the first thin film transistor, and is made of a same material as the first gate electrode.
6. The display device according to claim 2 , further comprising:
an organic light-emitting device connected to the second thin film transistor;
a low-potential supply line connected to a cathode of the organic light-emitting device; and
a high-potential supply line disposed so as to overlap the low-potential supply line, wherein
at least one of the low-potential supply line or the high-potential supply line is disposed in a mesh shape.
7. The display device according to claim 6 , further comprising:
a first planarization layer disposed on the upper interlayer dielectric film;
a pixel connection electrode disposed on the first planarization layer so as to contact the second source electrode; and
a second planarization layer disposed so as to cover the pixel connection electrode.
8. The display device according to claim 7 , wherein
the low-potential supply line comprises first and second low-potential supply lines, which intersect each other, and
the high-potential supply line comprises a first high-potential supply line disposed parallel to the first low-potential supply line and a second high-potential supply line overlapping the second low-potential supply line in a state in which the first planarization layer is disposed there between.
9. The display device according to claim 8 , wherein
the second low-potential supply line is formed in a same plane as the pixel connection electrode, and is made of a same material as the pixel connection electrode, and
the second high-potential supply line is formed in a same plane as the second source and second drain electrodes, and is made of a same material as the second source and second drain electrodes.
10. The display device according to claim 7 , further comprising:
a signal link disposed on the substrate in the bending area exposed through the at least one opening so as to contact the substrate, the signal link being made of a same material as the first and second source electrodes, wherein
at least one of the first and second planarization layers are disposed so as to cover the signal link.
11. The display device according to claim 7 , further comprising:
a signal link disposed on the first planarization layer in the bending area exposed through the at least one opening, the signal link being made of a same material as the pixel connection electrode, wherein
the second planarization layer is disposed so as to cover the signal link.
12. The display device according to claim 6 , further comprising:
a pixel-driving circuit for driving the organic light-emitting device, wherein
the pixel-driving circuit comprises:
a drive transistor constituted by the second thin film transistor; and
a switching transistor connected to the drive transistor, the switching transistor being constituted by the first thin film transistor.
13. The display device according to claim 12 , wherein the pixel-driving circuit further comprises:
a second switching transistor constituted by the second thin film transistor, the second switching transistor being connected to the drive transistor; and
a third switching transistor constituted by the first thin film transistor, the third switching transistor being connected to the high-potential supply line.
14. The display device according to claim 1 , wherein the first semiconductor layer includes a polycrystalline semiconductor layer and the second semiconductor layer includes an oxide semiconductor layer.
15. The display device according to claim 1 , further comprising a first planarization layer disposed at the at least one opening,
wherein the at least one opening exposes a lateral surface of the first inorganic dielectric film, the second inorganic dielectric film and a third inorganic dielectric film; and
wherein the first planarization layer is disposed on the lateral surface of the first inorganic dielectric film, the second inorganic dielectric film and the third inorganic dielectric film, and is formed of dielectric material.