IP Library › Granted Patent US 11,418,008
Granted Patent B2
US 11,418,008 · App. 16/824,317 · Granted Aug 16, 2022

Laser device

Inventor: Jin Tae Kim (Daejeon, KR)
Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
H01S5/11H01S5/026H01S5/0218H01S5/041H01S5/1042H01S5/021H01S5/02326H01S5/1014H01S5/1032H01S5/1206H01S5/3412
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Quick Facts
Patent No.
US 11,418,008
App. No.
16/824,317
Granted
Aug 16, 2022
Kind
B2
Abstract

Disclosed is a laser device. The laser device includes a substrate, a pump light source which is disposed on the substrate and provided with a light emitting layer configured to generate pump light, and an upper waveguide which is disposed above the pump light source in a first direction and provided with an upper resonator configured to allow laser light to be generated and resonate by using the pump light.

Claims (40)

1. A laser device comprising:

a substrate;

a pump light source which is disposed on the substrate and has a light emitting layer configured to generate pump light;

an upper waveguide having an upper resonator configured to allow laser light to be generated and resonate using the pump light, and

a lower waveguide comprising a lower resonator disposed between the light emitting layer and the substrate and extending in a first direction,

wherein the upper waveguide and the lower waveguide are configured to guide the laser light in the first direction, and the light emitting layer is disposed between the upper waveguide and the lower waveguide,

wherein the lower resonator comprises:

a lower resonance hole;

a first lower mirror hole disposed on one side of the lower resonance hole; and

a second lower mirror hole disposed on the other side of the lower resonance hole,

wherein the upper resonator comprises:

an upper resonance hole which is disposed above the lower resonance hole and larger than the lower resonance hole;

a first upper mirror hole disposed on one side of the upper resonance hole; and

a second upper mirror hole disposed on the other side of the upper resonance hole.

2. The laser device of claim 1 , wherein the light emitting layer comprises graphene or metal chalcogenide.

3. The laser device of claim 1 , wherein the pump light source further comprises upper electrodes which are disposed on both side walls of the light emitting layer outside the upper waveguide.

4. The laser device of claim 1 , wherein the pump light source further comprises a lower electrode between the light emitting layer and the substrate.

5. The laser device of claim 1 , further comprising a first alignment key which is provided within the first upper mirror hole and the first lower mirror hole.

6. The laser device of claim 1 , wherein the upper waveguide further comprises an upper alignment hole which is spaced apart from the upper resonator, and the lower waveguide further comprises a lower alignment hole which is spaced apart from the lower resonator, wherein the laser device further comprises an alignment key which is provided within the upper alignment hole and the lower alignment hole.

7. A laser device comprising:

a lower waveguide comprising a lower resonator on a substrate;

a pump light source which is disposed on the lower resonator and has a light emitting layer configured to generate pump light; and

an upper waveguide which is disposed above the light emitting layer and the lower waveguide and has an upper resonator configured to allow laser light to be generated and resonate using the pump light,

wherein the lower resonator comprises:

a lower resonance hole;

a first lower mirror hole which is disposed on one side of the lower resonance hole and larger than the lower resonance hole; and

a second lower mirror hole which is disposed on the other side of the lower resonance hole and has the same size as the first lower mirror hole, and

wherein the upper resonator comprises:

an upper resonance hole which is disposed above the lower resonance hole and larger than the lower resonance hole;

a first upper mirror hole which is disposed on one side of the upper resonance hole and larger than the upper resonance hole; and

a second upper mirror hole which is disposed on the other side of the upper resonance hole and has the same size as the first upper mirror hole.

8. The laser device of claim 7 , further comprising a first alignment key which is provided within the first lower mirror hole and the first upper mirror hole.

9. The laser device of claim 7 , wherein the upper resonance hole is larger than the lower resonance hole, and

the first and second lower mirror holes have the same size as the first and second upper mirror holes.

10. The laser device of claim 7 , further comprising a dielectric layer which is disposed between the lower waveguide and the upper waveguide outside the light emitting layer.

11. The laser device of claim 10 , wherein the upper waveguide further comprises an upper alignment hole which is spaced a coupling length from the upper resonator, and

the lower waveguide further comprises a lower alignment hole which is disposed below the upper alignment hole.

12. The laser device of claim 11 , further comprising an alignment key which passes through the dielectric layer and is provided within the upper alignment hole and the lower alignment hole.

13. The laser device of claim 11 , wherein the dielectric layer has a refractive index greater than a refractive index of the upper waveguide and less than a refractive index of the lower waveguide.

14. The laser device of claim 7 , wherein the substrate comprises a recess which is disposed below the lower resonator.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2020
From: KIM, JIN TAE
To: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Reel/Frame 052203/0838 →
Priority Claims (2)
KR 10-2019-0032026 · Mar 20, 2019 · national
KR 10-2020-0012474 · Feb 3, 2020 · national
Continuity (1)
Related Publication 20200303890A1 · Sep 24, 2020
Cited By (1)
US 12,436,336