Apparatuses for thin film deposition
In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
1. An atomic layer deposition (ALD) reactor comprising:
a first station and a second station,
wherein the first station is configured to contain a first substrate and to contact the first substrate with a first reactant in gas isolation from the second station, such that no more than one monolayer of the first reactant is adsorbed on the first substrate,
wherein the second station is configured to contain the first substrate and to contact the first substrate with a second reactant in gas isolation from the first station and substantially in the absence of the first reactant, wherein the second reactant is different from the first reactant and reacts with the no more than one monolayer of the first reactant on the first substrate to form a desired material;
a shared intermediate space, the shared intermediate space comprising a space outside of the first station and the second station; and
a transfer system configured to place the first substrate in the second station after contacting the first substrate with the first reactant, and configured to place the first substrate in the first station after contacting the first substrate with the second reactant,
the transfer system comprising:
a first movable stage configured to move the first substrate between the first station and the shared intermediate space;
a second moveable stage configured to move the first substrate between the second station and the shared intermediate space,
whereby the shared intermediate space accommodates the first movable stage of the first station and the second movable stage of the second station,
wherein the first movable stage, when disposed at the first station, defines a wall of the first station that provides gas isolation between the first station and the second station, and
wherein the second movable stage, when disposed at the second station, defines a wall of the second station that provides gas isolation between the first station and the second station;
a transfer member within the shared intermediate space and configured to transfer the first substrate from the first movable stage to the second movable stage and vice versa within the shared intermediate space, wherein the transfer member is configured to move between the first movable stage and the second movable stage in a stop-start indexing motion; and
a physical barrier configured to move simultaneously with the first movable stage, wherein the physical barrier places the first station in gas isolation from the second station at the same time the substrate is placed in the first station; and
a controller set to control a cycle of:
moving the first substrate via the transfer member in the shared intermediate space to the first moveable stage, moving the first substrate to the first station via the first moveable stage, moving the physical barrier at the same time as the first movable stage to place the first station in gas isolation, directing the first station to contact the first substrate with the first reactant, purging the first station while the first substrate is present therein after contacting the first substrate with the first reactant, moving the first substrate via the first movable stage to the transfer member in the shared intermediate space, moving the first substrate to the second movable stages via the transfer member in the shared intermediate space, moving the first substrate to the second station via the second movable stage, directing the second station to contact the first substrate with the second reactant, and purging the second station while the first substrate is present therein after contacting the first substrate with the second reactant, and
further set to repeat the cycle until a film of desired thickness is selectively formed on the first surface but not the second surface,
wherein no surface of the ALD reactor is substantially contacted with more than one of the first reactant and second reactant,
wherein a gap is maintained between the first and second station.
2. The ALD reactor of claim 1 , wherein the ALD reactor is configured for selective deposition,
wherein the first substrate comprises a first exposed surface and a second exposed surface that is different from the first exposed surface,
wherein the first reactant is selectively adsorbed on the first exposed surface relative to the second exposed surface,
wherein the second reactant reacts with the no more than one monolayer of the first reactant on the first substrate, but does not react with the second exposed surface, and
wherein the film of desired thickness is selectively deposited on the first exposed surface relative to the second exposed surface.
3. The ALD reactor of claim 1 , further comprising a purge location, configured to receive the first substrate after contacting the first substrate with the first reactant, but prior to placing the first substrate in the second station,
wherein the purge location is configured to perform a purge with the first substrate therein, and
wherein the purge location is not in gas communication with the first station, and is not in gas communication with the second station.
4. The ALD reactor of claim 3 , wherein the purge location is comprised by the shared intermediate space.
5. The ALD reactor of claim 1 , wherein the ALD reactor is configured to prevent the simultaneous presence of substantial quantities of the first reactant and the second reactant in any station of the ALD reactor.
6. The ALD reactor of claim 1 , wherein the ALD reactor is configured to substantially prevent chemical vapor deposition (CVD) reactions from occurring on any surface of the first and second stations of the ALD reactor.
7. The ALD reactor of claim 1 , further comprising at least one solid material that provides gas isolation between the first and second stations.
8. The ALD reactor of claim 1 , wherein gas isolation between the first and second stations is not provided by a gas bearing.
9. The ALD reactor of claim 1 , wherein the first station is in a fixed location relative to the second station.
10. The ALD reactor of claim 1 , wherein the transfer member comprises a rotating substrate holder configured to remove the first substrate from the first movable stage and place the first substrate on the second movable stage by rotation.
11. The ALD reactor of claim 1 , wherein the transfer member comprises a spider.
12. The ALD reactor of claim 1 , further comprising:
a first gas line placing the first station in gas communication with the first reactant; and
a second gas line placing the second station in gas communication with the second reactant,
wherein the first gas line is separate from the second gas line.
13. The ALD reactor of claim 1 , further comprising:
a third station in gas isolation from the first station and second station, the third station configured to hold a second substrate, wherein the third station is configured to contact the second substrate with the first reactant, wherein the first reactant reacts with second substrate such that no more than one monolayer of the first reactant is absorbed on the second substrate; and
a fourth station in gas isolation from the first station, second station, and third station, wherein the fourth station is configured to contact the second substrate with the second reactant substantially in the absence of the first reactant, wherein the second reactant reacts with the no more than one monolayer of the first reactant on the second substrate thereby forming a desired material on the second substrate.
14. The ALD reactor of claim 1 , further comprising:
a third station in gas isolation from the first station and second station, the third station configured to contain the first substrate, wherein the third station is configured to contact the first substrate with a third reactant that is different from the first and second reactants, thereby adsorbing no more than one monolayer of the third reactant on the second exposed surface; and
a fourth station in gas isolation from the first station, second station, and third station and configured to contain the first substrate, wherein the fourth station is configured to contact the first substrate with a fourth reactant that is different from the first, second, and third reactants, and substantially in the absence of the first, second, and third reactants, wherein the fourth reactant reacts with the no more than one monolayer of the third reactant but not the first exposed surface, such that no more than one monolayer of the fourth reactant is adsorbed on the second exposed surface.
15. The ALD reactor of claim 1 , wherein the first station is configured to be placed in gas isolation from the second station while the first substrate is in the first station.
16. The ALD reactor of claim 1 , wherein the first station is configured to be in gas isolation from the second station prior to placement of the first substrate in the first station.
17. The ALD reactor of claim 1 , wherein the second station is configured to be placed in gas isolation from the first station while the first substrate is in the second station.
18. The ALD reactor of claim 1 , wherein the second station is configured to be in gas isolation from the first station prior to placement of the first substrate in the second station.
19. The ALD reactor of claim 1 , wherein the transfer system is configured for no surface of the substrate transfer system to enter more than one station.