Page buffer and semiconductor memory device having the page buffer
The present technology relates to a page buffer and a semiconductor memory device including the page buffer. The page buffer includes a sensing node, a bit line controller connected between the sensing node and a bit line. The bit line controller is configured to first precharge and second precharge the sensing node.
1. A page buffer comprising:
a sensing node;
a bit line controller connected between the sensing node and a bit line, and configured to, during a sensing node precharge operation, perform a first precharge of the sensing node to precharge the sensing node to a first potential level and then perform a second precharge of the sensing node to a second potential level; and
a sub latch for latching sensing data based on a potential level of the sensing node.
2. The page buffer of claim 1 , wherein the bit line controller first precharges the sensing node by forming a first current path and then second precharges the sensing node by forming a second current path during the sensing node precharge operation.
3. The page buffer of claim 1 , wherein the first potential level is lower than the second potential level.
4. The page buffer of claim 1 , wherein the bit line controller comprises:
a first transistor connected between a core voltage and a common sensing node and turned on in response to a first common sensing control signal;
a second transistor connected between the common sensing node and the sensing node and turned on in response to a sensing signal; and
third and fourth transistors connected in series between the core voltage and the sensing node.
5. The page buffer of claim 4 , wherein the third transistor is turned on in response to a potential of a node of the sub latch, and the fourth transistor is turned on in response to a precharge signal.
6. The page buffer of claim 4 , wherein the first and second transistors are NMOS transistors, and the third and fourth transistors are PMOS transistors.
7. The page buffer of claim 6 , wherein a first current path is formed through the first transistor and the second transistor, and
a second current path is formed through the third transistor and the fourth transistor.
8. The page buffer of claim 1 , wherein the first and second precharges are performed simultaneously to increase the potential level of the sensing node to the second potential level.
9. A semiconductor memory device comprising:
a memory cell array; and
a plurality of page buffers connected to a plurality of bit lines of the memory cell array, respectively,
wherein each of the plurality of page buffers comprises:
a sensing node;
a bit line controller connected between the sensing node and a bit line, and configured to, during a sensing node precharge operation, perform a first precharge of the sensing node to precharge the sensing node to a first potential level and then perform a second precharge of the sensing node to increase a potential level of the sensing node to a second potential level; and
a sub latch for latching sensing data based on a potential level of the sensing node.
10. The semiconductor memory device of claim 9 , wherein the bit line controller first precharges the sensing node by forming a first current path and then second precharges the sensing node by forming a second current path during the sensing node precharge operation.
11. The semiconductor memory device of claim 9 , wherein the first potential level is lower than the second potential level.
12. The semiconductor memory device of claim 9 , wherein the bit line controller comprises:
a first transistor connected between a core voltage and a common sensing node and turned on in response to a first common sensing control signal;
a second transistor connected between the common sensing node and the sensing node and turned on in response to a sensing signal; and
third and fourth transistors connected in series between the core voltage and the sensing node.
13. The semiconductor memory device of claim 12 , wherein the third transistor is turned on in response to a potential of a node of the sub latch, and the fourth transistor is turned on in response to a precharge signal.
14. The semiconductor memory device of claim 12 , wherein the first and second transistors are NMOS transistors, and the third and fourth transistors are PMOS transistors.
15. The semiconductor memory device of claim 14 , wherein a first current path is formed through the first transistor and the second transistor, and
a second current path is formed through the third transistor and the fourth transistor.
16. A page buffer comprising:
a sensing node;
a bit line controller connected between the sensing node and a bit line, and configured to, during a sensing node precharge operation, precharge the sensing node to a first potential level using a first current path, and, after the sensing node has been precharged to the first potential level using the first current path, precharging the sensing node to a second potential level using a second current path; and
a sub latch for latching sensing data based on a potential level of the sensing node.
17. The page buffer of claim 16 , wherein the second potential level is higher than the first potential level.
18. The page buffer of claim 16 , wherein the bit line controller comprises:
a first transistor connected between a core voltage and a common sensing node and turned on in response to a first common sensing control signal;
a second transistor connected between the common sensing node and the sensing node and turned on in response to a sensing signal; and
third and fourth transistors connected in series between the core voltage and the sensing node.
19. The page buffer of claim 18 , wherein the third transistor is turned on in response to a potential of a node of the sub latch, and the fourth transistor is turned on in response to a precharge signal.
20. The page buffer of claim 18 , wherein the first and second transistors are NMOS transistors, and the third and fourth transistors are PMOS transistors.
21. The page buffer of claim 20 , wherein the first current path is formed through the first transistor and the second transistor, and the second current path is formed through the third transistor and the fourth transistor.