Semiconductor manufacturing apparatus member and method for manufacturing the same

1. A semiconductor manufacturing apparatus member in which an insulating electrostatic chuck having a wafer placement surface and provided with a narrow hole penetrating in the thickness direction and a conductive cooling plate provided with a gas supply hole penetrating in the thickness direction are bonded together, the semiconductor manufacturing apparatus member comprising:

a plug chamber composed of at least one of an electrostatic chuck side recess provided from a surface of the insulating electrostatic chuck opposite to the wafer placement surface toward the wafer placement surface and a cooling plate side recess provided from a facing surface of the conductive cooling plate facing the insulating electrostatic chuck toward a surface opposite to the facing surface;

a porous insulating air permeable plug disposed in the plug chamber;

an annular dense layer provided on the surface of the porous insulating air permeable plug so as to separate the surface of the porous insulating air permeable plug into a narrow hole side surface including a part facing the narrow hole and not directly facing the conductive cooling plate and a gas supply hole side surface including a part facing the gas supply hole;

an adhesive layer filled between the annular dense layer and the wall surface of the plug chamber; and

wherein the porous insulating air permeable plug is a cylindrical member; and

wherein the adhesive layer forms a space between a surface of the adhesive layer facing the narrow hole side surface and the narrow hole side surface.

2. The semiconductor manufacturing apparatus member according to claim 1 , wherein the annular dense layer is a heat-resistant resin film.

3. The semiconductor manufacturing apparatus member according to claim 2 , wherein the heat-resistant resin film is a fluorine-based resin film or a polyimide-based resin film.

4. The semiconductor manufacturing apparatus member according to claim 1 , wherein the annular dense layer is a thermal-sprayed film.

5. The semiconductor manufacturing apparatus member according to claim 4 , wherein the thermal-sprayed film is made of the same material as that of the porous insulating air permeable plug.

6. The semiconductor manufacturing apparatus member according to claim 1 ,

wherein the plug chamber has at least the electrostatic chuck side recess, and

wherein the annular dense layer is provided at a position on the side surface of the porous insulating air permeable plug that faces the wall surface of the electrostatic chuck side recess.

7. The semiconductor manufacturing apparatus member according to claim 1 , wherein the plug chamber is composed of the cooling plate side recess.

8. A method for manufacturing the semiconductor manufacturing apparatus member according to claim 1 , the method comprising the steps of:

(a) preparing the insulating electrostatic chuck and the conductive cooling plate before being bonded to each other and preparing the porous insulating air permeable plug before being disposed in the plug chamber and before being provided with the annular dense layer;

(b) providing the porous insulating air permeable plug with the annular dense layer, then applying adhesive slurry to the annular dense layer of the porous insulating air permeable plug, then disposing the porous insulating air permeable plug in a predetermined part that later becomes the plug chamber, and curing the adhesive slurry between the annular dense layer and the wall surface of the part to form the adhesive layer; and

(c) bonding the insulating electrostatic chuck and the conductive cooling plate to each other.