Semiconductor apparatus and equipment
A semiconductor apparatus of the present disclosure includes: a first semiconductor component in which a first circuit unit is provided; and a second semiconductor component in which a second circuit unit is provided and which is stacked to the first semiconductor component, and the second semiconductor component includes a capacitor unit as a decoupling capacitor having a first node and a second node that are connected to the first circuit unit.
1. A semiconductor apparatus comprising:
a first semiconductor component in which a first circuit unit is provided; and
a second semiconductor component in which a second circuit unit is provided and which is stacked to the first semiconductor component,
wherein the second semiconductor component includes a capacitor unit as a decoupling capacitor having a first node and a second node that are connected to the first circuit unit, and
wherein the first circuit unit is a signal processing circuit that processes a signal for generating an image output from the second circuit unit.
2. The semiconductor apparatus according to claim 1 , wherein the second semiconductor component further includes a shield portion provided between the second circuit unit and the capacitor unit.
3. The semiconductor apparatus according to claim 1 , wherein the capacitor unit has MOS structure.
4. The semiconductor apparatus according to claim 1 ,
wherein the capacitor unit includes a first metal wiring and a second metal wiring formed on a wiring layer region on a semiconductor substrate of the second semiconductor component, and
wherein the first node of the capacitor unit is connected to the first metal wiring, and the second node of the capacitor unit is connected to the second metal wiring.
5. The semiconductor apparatus according to claim 4 , wherein the first metal wiring and the second metal wiring are formed in different wiring layers.
6. The semiconductor apparatus according to claim 4 , wherein the first metal wiring and the second metal wiring are formed in the same wiring layer.
7. The semiconductor apparatus according to claim 6 , wherein each of the first metal wiring and the second metal wiring has a concave portion or a convex portion in plan view, and the convex portion of the second metal wiring is located in the concave portion of the first metal wiring.
8. The semiconductor apparatus according to claim 1 further comprising a plurality of capacitor units, wherein the plurality of capacitor units are connected to each other in parallel.
9. The semiconductor apparatus according to claim 1 , wherein the capacitor unit and the first circuit unit are arranged so as to be at least partially overlapped in plan view.
10. The semiconductor apparatus according to claim 1 , wherein the second circuit unit is a pixel unit including a photoelectric conversion unit.
11. The semiconductor apparatus according to claim 10 , wherein the first circuit is an operation processing circuit.
12. The semiconductor apparatus according to claim 11 , wherein the operation processing circuit performs a noise reduction processing.
13. The semiconductor apparatus according to claim 10 , wherein the first circuit is an analog-to-digital conversion circuit.
14. The semiconductor apparatus according to claim 10 , wherein the first circuit unit is a digital signal processing circuit that processes digital data.
15. The semiconductor apparatus according to claim 1 ,
wherein the first semiconductor component and the second semiconductor component are stacked so that a wiring layer region of the first semiconductor component and a wiring layer region of the second semiconductor component face each other, and
wherein a junction contact formed in the wiring layer region of the first semiconductor component is connected to a through electrode formed in the semiconductor substrate of the second semiconductor component.
16. The semiconductor apparatus according to claim 1 , wherein the first node of the capacitor unit is connected to a power source line of the first circuit unit, and the second node of the capacitor unit is connected to a ground line of the first circuit unit.
17. The semiconductor apparatus according to claim 1 ,
wherein the first circuit unit includes a voltage generation circuit that generates a reference voltage, and
wherein the first node of the capacitor unit is connected to a wiring of the reference voltage, and the second node of the capacitor unit is connected to a ground line.
18. An equipment comprising:
the semiconductor apparatus according to claim 1 ; and
an apparatus connected to the semiconductor apparatus.
19. A semiconductor apparatus comprising:
a first semiconductor component in which a first circuit unit is provided; and
a second semiconductor component in which a second circuit unit is provided and which is stacked to the first semiconductor component,
wherein the second semiconductor component includes a capacitor unit having a first node and a second node that are connected to the first circuit unit, and
wherein the second semiconductor component further includes a shield portion provided between the second circuit unit and the capacitor unit.
20. The semiconductor apparatus according to claim 19 , wherein the shield portion includes a plurality of wiring layers and a plurality of connection portions connecting the plurality of wiring layers to each other.
21. The semiconductor apparatus according to claim 19 , wherein a fixed voltage is applied to the shield portion.
22. The semiconductor apparatus according to claim 19 , wherein the capacitor unit has MOS structure.
23. A semiconductor apparatus comprising:
a first semiconductor component in which a first circuit unit is provided; and
a second semiconductor component in which a second circuit unit is provided and which is stacked to the first semiconductor component,
wherein the second semiconductor component includes a capacitor unit as a decoupling capacitor having a first node and a second node that are connected to the first circuit unit, and
wherein the capacitor unit is formed of a semiconductor region and a polysilicon electrode formed on the semiconductor region via an insulating film.
24. The semiconductor apparatus according to claim 23 , wherein the capacitor unit is formed in a well isolated from the second circuit unit in a semiconductor substrate of the second semiconductor component.
25. The semiconductor apparatus according to claim 24 ,
wherein the capacitor unit further has a gate electrode, a source region, a drain region, and a substrate bias portion, and
wherein the first node of the capacitor unit is connected to the gate electrode, and the second node of the capacitor unit is connected to the source region, the drain region, and the substrate bias portion.
26. The semiconductor apparatus according to claim 25 ,
wherein the semiconductor region is arranged in the well, and
wherein the first node of the capacitor unit is connected to the semiconductor region, and the second node of the capacitor unit is connected to the polysilicon electrode.
27. The semiconductor apparatus according to claim 23 further comprising a pad electrode to which a bonding wire is connected,
wherein the capacitor unit is arranged between the pad electrode and the second circuit unit in plan view.
28. The semiconductor apparatus according to claim 23 ,
wherein the first semiconductor component and the second semiconductor component are stacked so that a wiring layer region of the first semiconductor component and a wiring layer region of the second semiconductor component face each other, and
wherein a junction contact formed in the wiring layer region of the first semiconductor component is connected to a junction contact formed in the wiring layer region of the second semiconductor component.
29. A semiconductor apparatus comprising:
a first semiconductor component in which a first circuit unit is provided; and
a second semiconductor component in which a plurality of second circuit units is provided in rows and columns and which is stacked to the first semiconductor component,
wherein the second semiconductor component includes a capacitor unit having a first node and a second node that are connected to the first circuit unit, and each of the plurality of second circuit units is a pixel unit including a plurality of pixels, and
wherein the capacitor unit is arranged outside an area of the plurality of second circuit units in plan view.
30. The semiconductor apparatus according to claim 29 , wherein the first semiconductor component includes a third circuit unit at least partially overlapping the second circuit unit in plan view.
31. The semiconductor apparatus according to claim 30 , wherein the third circuit unit includes at least one of an analog-to-digital conversion unit that converts an analog signal output from the pixel unit into digital data and a memory unit that holds the digital data.
32. The semiconductor apparatus according to claim 31 , wherein the first circuit unit is a digital signal processing circuit that processes the digital data.
33. The semiconductor apparatus according to claim 32 , wherein the digital signal processing circuit outputs the digital data to an outside of the semiconductor apparatus.