IP Library › Granted Patent US 11,424,284
Granted Patent B2
US 11,424,284 · App. 16/486,952 · Granted Aug 23, 2022

Solid-state imaging device and electronic apparatus

Inventor: Atsushi Toda (Kanagawa, JP)
Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
H01L27/14643G02B5/30H01L27/14603H04N5/3696H01L27/14621
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Quick Facts
Patent No.
US 11,424,284
App. No.
16/486,952
Granted
Aug 23, 2022
Kind
B2
Abstract

The present disclosure relates to a solid-state imaging device and an electronic apparatus that make it possible to estimate a normal vector to one direction with high accuracy with a simple configuration. A polarization image sensor includes a plurality of polarizers disposed on a chip and having different polarization directions, and a plurality of photoelectric conversion sections having light reception regions for receiving light transmitted through the polarizers, the light reception regions being symmetrical. The present disclosure can be applied, for example, to a polarization image sensor or the like that estimates a surface and a shape of an imaging object.

Claims (37)

1. A solid-state imaging device, comprising:

a plurality of polarizers disposed on a chip and having different polarization directions; and

a plurality of photoelectric conversion sections having light reception regions to receive light transmitted through the plurality of polarizers, wherein the light reception regions are symmetrical, and wherein each of the plurality of photoelectric conversion sections includes two photodiodes formed divisionally in one or more pixels, and a division direction of the two photodiodes is same as a polarization direction of a corresponding polarizer of the plurality of polarizers.

2. The solid-state imaging device according to claim 1 , wherein

the two photodiodes are formed under an on-chip lens of one pixel.

3. The solid-state imaging device according to claim 1 , wherein

the two photodiodes are formed under an on-chip lens of a plurality of pixels.

4. The solid-state imaging device according to claim 2 , wherein

the on-chip lens includes a lens of a substantially spherical shape.

5. The solid-state imaging device according to claim 3 , wherein

the on-chip lens includes a lenticular type lens.

6. The solid-state imaging device according to claim 1 , wherein

the two photodiodes are formed in different pixels.

7. The solid-state imaging device according to claim 1 , wherein

the plurality of polarizers includes polarizers of a photonic crystal type.

8. The solid-state imaging device according to claim 1 , wherein

the plurality of polarizers includes polarizers of a wire grid type.

9. The solid-state imaging device according to claim 1 , wherein

each of the plurality of polarizers transmits light of one of four polarization directions.

10. An electronic apparatus, comprising:

a solid-state imaging device including:

a plurality of polarizers disposed on a chip and having different polarization directions, and

a plurality of photoelectric conversion sections having light reception regions to receive light transmitted through the plurality of polarizers, wherein the light reception regions are symmetrical, and wherein each of the plurality of photoelectric conversion sections includes two photodiodes formed divisionally in one or more pixels, and a division direction of the two photodiodes is same as a polarization direction of a corresponding polarizer of the plurality of polarizers.

11. The electronic apparatus according to claim 10 , further comprising:

a signal processing circuit configured to calculate a normal vector on a surface of an imaging object on a basis of an image signal outputted from the solid- state imaging device and estimate the surface and a shape of the imaging object.

12. The electronic apparatus according to claim 10 , further comprising:

a signal processing circuit configured to calculate a distance to an imaging object on a basis of an image signal outputted from the solid-state imaging device.

13. The electronic apparatus according to claim 10 , wherein

an imaging object to be imaged by the solid-state imaging device includes a living body.

14. The solid-state imaging device according to claim 1 , wherein the two photodiodes that are formed divisionally in the one or more pixels receive the light from two different directions to enable imaging from the two different directions.

15. The solid-state imaging device according to claim 1 , wherein the two photodiodes that are formed divisionally in the one or more pixels are symmetrical in a depthwise direction.

16. The solid-state imaging device according to claim 1 , wherein the two photodiodes that are formed divisionally in the one or more pixels are symmetrical in a horizontal direction.

17. A solid-state imaging device, comprising:

a plurality of polarizers disposed on a chip and having different polarization directions; and

a plurality of photoelectric conversion sections having light reception regions to receive light transmitted through the plurality of polarizers, wherein the light reception regions are symmetrical, wherein each of the plurality of photoelectric conversion sections includes a photodiode, and wherein

a part of a light reception region of the photodiode is covered with a light blocking film to form a light non-reception region, and

a division direction of remaining part of the light reception region of the photodiode and the light non-reception region is same as a polarization direction of a corresponding polarizer of the plurality of polarizers.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2019
From: TODA, ATSUSHI
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 050832/0580 →
Priority Claims (1)
JP JP2017-040132 · Mar 3, 2017 · national
Continuity (1)
Related Publication 20200013819A1 · Jan 9, 2020