Wafer-level process for curving a set of electronic chips

1. A wafer-level process for curving a set of electronic chips, comprising:

providing the set of electronic chips, comprising a stack including:

a set of matrix arrays of pixels,

an interconnect layer electrically connected to the set of matrix arrays of pixels,

a first layer, comprising vias electrically connected to the interconnect layer;

the stack possessing a first thickness and a first coefficient of thermal expansion;

forming metal pillars on the first layer, said pillars being electrically connected to the vias;

forming a material integrally with the first layer, around the metal pillars; the material possessing a second thickness, a second coefficient of thermal expansion strictly higher than the first coefficient of thermal expansion, and a forming temperature;

dicing the electronic chips so as to release the thermomechanical stresses to which the stack is subjected; the forming temperature, the ratio between the first and second coefficients of thermal expansion and the ratio between the first and second thicknesses being chosen so that, at the end of the dicing the electronic chips, the stack is curved with a predefined convex shape that is oriented towards the set of matrix arrays of pixels, at a given operating temperature of the electronic chips;

making the metal pillars coplanar after the dicing the electronic chips.

2. The process according to claim 1 , wherein the making the metal pillars is executed so that the metal pillars lie flush with the material.

3. The process according to claim 1 , wherein the making the metal pillars is executed via mechanical or chemical-mechanical polishing of the metal pillars.

4. The process according to claim 1 , comprising forming solder bumps in contact with the metal pillars at the end of the making the metal pillars.

5. The process according to claim 1 , wherein the providing the set of electronic chips comprises:

providing a first substrate on which is formed the set of electronic chips;

assembling a temporary substrate with the set of electronic chips;

thinning the first substrate until the first layer is obtained;

forming the vias in the first layer.

6. The process according to claim 1 , wherein the providing the set of electronic chips is executed so that:

the interconnect layer is formed on the first layer;

the set of matrix arrays of pixels is formed on the interconnect layer;

the stack comprises a set of matrix arrays of focusing lenses, which is formed on the set of matrix arrays of pixels.

7. The process according to claim 1 , wherein the providing the set of electronic chips is executed so that:

the set of matrix arrays of pixels is formed on the first layer;

the interconnect layer is formed on the set of matrix arrays of pixels;

the stack comprises a set of matrix arrays of focusing lenses, which is formed on the interconnect layer.

8. The process according to claim 1 , wherein the providing the set of electronic chips is executed so that the material is a thermosetting polymer preferably chosen from an epoxy resin and a polysiloxane resin.

9. The process according to claim 1 , wherein the providing the set of electronic chips is executed so that the first and second coefficients of thermal expansion respect:

α

2

α

1

≥

4

,

and preferably

α

2

α

1

≥

6

,

where:

α 1 is the coefficient of thermal expansion of the stack,

α 2 is the coefficient of thermal expansion of the material.

10. The process according to claim 1 , wherein the providing the set of electronic chips is executed so that the material possesses a Young's modulus higher than 3 GPa.