Near-infrared light organic sensors, embedded organic light emitting diode panels, and display devices including the same

1. An Organic Light Emitting Diode (OLED) panel embedded with a Near Infrared (NIR) light sensor, the OLED panel comprising:

a plurality of OLED pixels, the plurality of OLED pixels including

an OLED stack configured to emit visible light in a first direction; and

an NIR light sensor stack under the OLED stack, the NIR light sensor stack including

an NIR emitter configured to emit NIR light through the OLED stack in the first direction, and

an NIR detector configured to receive NIR light through the OLED stack.

2. The OLED panel embedded with the NIR light sensor of claim 1 , wherein the NIR emitter and the NIR detector are in different sub-pixels of an OLED pixel of the plurality of OLED pixels, such that

the OLED pixel includes a first sub-pixel and a second sub-pixel,

the first sub-pixel includes the NIR emitter and does not include any NIR detectors, and

the second sub-pixel includes the NIR detector and does not include any NIR emitters.

3. The OLED panel embedded with the NIR light sensor of claim 2 , wherein

the different sub-pixels are adjacent sub-pixels in the OLED pixel, such that the first sub-pixel and the second sub-pixel are adjacent to each other in the OLED pixel.

4. The OLED panel embedded with the NIR light sensor of claim 2 , wherein

neither of any NIR emitter or any NIR detector are in a sub-pixel that is between the different sub-pixels in the OLED pixel, such that

the OLED pixel includes a third sub-pixel that is directly between the first sub-pixel and the second sub-pixel in the OLED pixel, and

the third sub-pixel does not include any NIR emitters and does not include any NIR detectors.

5. The OLED panel embedded with the NIR light sensor of claim 1 , wherein

the OLED stack, in each OLED pixel, includes

a plurality of OLED emitters configured to emit the visible light, the OLED emitters included in separate sub-pixels of the OLED pixel, and

a lower insulation layer between at least two proximate OLED emitters that are included in at least two proximate OLED sub-pixels, the lower insulation layer at least partially defining a non-light-emitting portion of the OLED pixel, where the non-light-emitting portion is between the at least two proximate sub-pixels that include the at least two proximate OLED emitters, and

the NIR emitter and the NIR detector are between the non-light-emitting portion of the OLED pixel of the plurality of OLED pixels and a substrate.

6. The OLED panel embedded with the NIR light sensor of claim 1 , wherein

the NIR emitter is an NIR organic photodiode that is configured to emit NIR light of a wavelength spectrum of about 800 nm to about 1500 nm, the NIR organic photodiode including an organic emission layer configured to emit the NIR light and lower and upper electrodes on opposite surfaces of the organic emission layer, respectively, and

the upper electrode is a transparent electrode and the lower electrode is a reflective electrode.

7. The OLED panel embedded with the NIR light sensor of claim 6 , wherein the organic emission layer includes at least one material of a set of materials represented by Chemical Formulae 1a to 1d,

8. The OLED panel embedded with the NIR light sensor of claim 1 , wherein

the NIR detector is an NIR organic photodiode that is configured to absorb NIR light of a wavelength spectrum of about 800 nm to about 1500 nm, the NIR organic photodiode including an organic light-absorbing layer configured to absorb the NIR light and lower and upper electrodes on opposite surfaces of the organic light-absorbing layer, respectively, and

the upper electrode is a transparent electrode having a transmittance equal to or greater than about 80%, and the lower electrode is a reflective electrode.

9. The OLED panel embedded with the NIR light sensor of claim 7 , wherein the organic emission layer includes at least one material of a set of materials represented by Chemical Formulae 1a, 1b, and 1d,

10. The OLED panel embedded with the NIR light sensor of claim 1 , wherein the NIR light sensor stack is configured to detect a fingerprint, an iris, or face image.

11. An electronic device, comprising:

a memory;

a processor; and

a display device including an Organic Light Emitting Diode (OLED) panel, the OLED panel including a plurality of OLED pixels, the plurality of OLED pixels including

an OLED stack configured to emit visible light in a first direction; and

an NIR light sensor stack under the OLED stack, the NIR light sensor stack including

an NIR emitter configured to emit NIR light through the OLED stack in the first direction, and

an NIR detector configured to receive NIR light through the OLED stack.

12. The electronic device of claim 11 , wherein the processor is configured to execute a program of instructions stored in the memory to implement biometric recognition of an individual based on processing electrical signals received from the NIR light sensor to detect a fingerprint, an iris, or a face image.

13. The electronic device of claim 11 , wherein the NIR emitter and the NIR detector are in different sub-pixels of an OLED pixel of the plurality of OLED pixels, such that

the OLED pixel includes a first sub-pixel and a second sub-pixel,

the first sub-pixel includes the NIR emitter and does not include any NIR detectors, and

the second sub-pixel includes the NIR detector and does not include any NIR emitters.

14. The electronic device of claim 13 , wherein the different sub-pixels are adjacent sub-pixels in the OLED pixel, such that the first sub-pixel and the second sub-pixel are adjacent to each other in the OLED pixel.

15. The electronic device of claim 13 , wherein neither of any NIR emitter or any NIR detector are in a sub-pixel that is between the different sub-pixels in the OLED pixel, such that

the OLED pixel includes a third sub-pixel that is directly between the first sub-pixel and the second sub-pixel in the OLED pixel, and

the third sub-pixel does not include any NIR emitters and does not include any NIR detectors.

16. The electronic device of claim 11 , wherein

the OLED stack, in each OLED pixel, includes

a plurality of OLED emitters configured to emit the visible light, the OLED emitters included in separate sub-pixels of the OLED pixel, and

a lower insulation layer between at least two proximate OLED emitters that are included in at least two proximate OLED sub-pixels, the lower insulation layer at least partially defining a non-light-emitting portion of the OLED pixel, where the non-light-emitting portion is between the at least two proximate OLED sub-pixels that include the at least two proximate OLED emitters, and

the NIR emitter and the NIR detector are between the non-light-emitting portion of an OLED pixel of the plurality of OLED pixels and a substrate.

17. The electronic device of claim 11 , wherein

the NIR emitter is an NIR organic photodiode that is configured to emit NIR light of a wavelength spectrum of about 800 nm to about 1500 nm, the NIR organic photodiode including an organic emission layer configured to emit the NIR light and lower and upper electrodes on opposite surfaces of the organic emission layer, respectively, and

the upper electrode is a transparent electrode and the lower electrode is a reflective electrode.

18. The electronic device of claim 17 , wherein the organic emission layer includes at least one material of a set of materials represented by Chemical Formulae 1a to 1d,

19. The electronic device of claim 11 , wherein

the NIR detector is an NIR organic photodiode that is configured to absorb NIR light of a wavelength spectrum of about 800 nm to about 1500 nm, the NIR organic photodiode includes an organic light-absorbing layer configured to absorb the NIR light and lower and upper electrodes on opposite surfaces of the organic light-absorbing layer, respectively, and

the upper electrode is a transparent electrode having a transmittance equal to or greater than about 80%, and the lower electrode is a reflective electrode.

20. The electronic device of claim 18 , wherein the organic emission layer includes at least one material of a set of materials represented by Chemical Formulae 1a, 1b and 1d,