Method of manufacturing metal nitride film and electronic device including metal nitride film
A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
1. A capacitor, comprising:
a lower electrode including a metal nitride represented as MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen;
a dielectric layer on the lower electrode;
an interfacial layer between the lower electrode and the dielectric layer, the interfacial layer including a metal nitrate represented by MM′ON, wherein M is the metal element, M′ is the element different from M, N is nitrogen, and O is oxygen; and
an upper electrode on the dielectric layer, wherein
in the capacitor, a change range of capacitance C with respect to a bias voltage is represented by C min ≤C≤C max , and C min /C max may be 0.9 or more.
2. The capacitor of claim 1 , wherein a content of carbon impurities in the lower electrode is 1% or less.
3. The capacitor of claim 1 , wherein a content of carbon impurities in the interfacial layer is 1% or less.
4. The capacitor of claim 1 , wherein the M is one of Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, and U.
5. The capacitor of claim 1 , wherein the M′ is one of H, Li, Be, B, N, 0 , Na, Mg, Al, Si, P, S, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, and U.
6. The capacitor of claim 1 , wherein
the metal nitride is represented as MxM′yNz,
0<x≤2, 0<y≤2, and 0<z≤4 are satisfied.
7. An integrated circuit device, comprising:
a substrate; and
the capacitor of claim 1 on the substrate.
8. The integrated circuit device of claim 7 , wherein the substrate includes:
a semiconductor substrate;
at least one conductive region on the semiconductor substrate; and
an insulating film insulating on the at least one conductive region.
9. The integrated circuit device of claim 7 , further comprising:
a wiring layer, wherein
the capacitor is connected to the wiring layer.
10. The integrated circuit device of claim 7 , further comprising:
a contact plug, wherein
the capacitor is connected to the contact plug.
11. An electronic device, comprising:
the capacitor of claim 1 connected to a transistor.
12. A capacitor, comprising:
a lower electrode including a metal nitride represented as M x M′ y N z ,
wherein M is a metal element, M′ is an element different from M, and N is nitrogen, wherein a content of carbon impurities in the lower electrode is 1% or less, and wherein 0<x≤2, 0<y≤2, and 0<z≤4 are satisfied;
a dielectric layer on the lower electrode; and
an upper electrode on the dielectric layer,
wherein in the capacitor, a change range of capacitance C with respect to a bias voltage is represented by C min ≤C≤C max , and C min /C max may be 0.9 or more.
13. The capacitor of claim 12 , wherein the M is one of Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, and U.
14. The capacitor of claim 12 , wherein the M′ is one of H, Li, Be, B, N, 0 , Na, Mg, Al, Si, P, S, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, and U.
15. The capacitor of claim 13 , wherein
the M is one of Be, B, Na, Mg, Si, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, and U.
16. The capacitor of claim 14 , wherein
the M′ is one of H, Li, Be, B, N, O, Na, Mg, P, S, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, and U.
17. An integrated circuit device, comprising:
a substrate; and
the capacitor of claim 12 on the substrate.
18. The integrated circuit device of claim 17 , wherein the substrate includes:
a semiconductor substrate;
at least one conductive region on the semiconductor substrate; and
an insulating film insulating on the at least one conductive region.
19. The integrated circuit device of claim 17 , further comprising:
a wiring layer, wherein
the capacitor is connected to the wiring layer.
20. The integrated circuit device of claim 17 , further comprising:
a contact plug, wherein
the capacitor is connected to the contact plug.
21. An electronic device, comprising:
the capacitor of claim 12 connected to a transistor.