IP Library › Granted Patent US 11,425,318
Granted Patent B2
US 11,425,318 · App. 17/279,851 · Granted Aug 23, 2022

Sensor and control method

Inventor: Hirotsugu Takahashi (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H04N5/347H04N5/3745
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Quick Facts
Patent No.
US 11,425,318
App. No.
17/279,851
Granted
Aug 23, 2022
Kind
B2
Abstract

The present technology relates to a sensor and a control method that achieve flexible acquisition of event data. A pixel block of the sensor includes one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal and an event detecting section configured to detect an event that is a change in electrical signal of each of the pixels. The sensor switches connections between a plurality of the pixel blocks. The present technology is applicable to a sensor configured to detect events that are changes in electrical signal of pixels, for example.

Claims (39)

1. A sensor comprising:

a plurality of pixel blocks, each pixel block including

one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal, and

an event detecting section configured to detect an event that is a change in electrical signal of any of the pixels; and

a connection control section configured to switch connections between the plurality of the pixel blocks, wherein

the connection control section connects the plurality of pixel blocks to combine photocurrents from the pixels in the plurality of pixel blocks, and

the event detecting section includes a current-voltage converting section configured to convert each of the photocurrents to a voltage with a FET (Field Effect Transistor) through which the photocurrents flow, and the connection control section switches connections between sources of the FETs of the plurality of pixel blocks.

2. The sensor according to claim 1 ,

wherein the connection control section turns on or off operation of the current-voltage converting section.

3. The sensor according to claim 1 , further comprising:

a transistor configured to transfer charges of the pixels.

4. A sensor comprising: a plurality of pixel blocks, each pixel block including

one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal, and

an event detecting section configured to detect an event that is a change in electrical signal of any of the pixels; and

a connection control section configured to switch connections between the plurality of the pixel blocks, wherein

the connection control section connects the plurality of pixel blocks to combine voltages corresponding to photocurrents from the pixels in the plurality of pixel blocks,

the event detecting section includes a current-voltage converting section configured to convert each of the photocurrents to a voltage with a FET (Field Effect Transistor) through which the photocurrents flow, and

the connection control section switches connections between gates of the FETs of the plurality of pixel blocks.

5. A sensor comprising:

a plurality of pixel blocks, each pixel block including

one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal, and

an event detecting section configured to detect an event that is a change in electrical signal of any of the pixels; and

a connection control section configured to switch connections between the plurality of the pixel blocks, wherein the event detecting section includes

a current-voltage converting section configured to convert each of photocurrents from the pixels to a voltage with a FET (Field Effect Transistor) through which the photocurrents flow, and

a subtraction section configured to obtain, with a first capacitor and a second capacitor, a difference signal corresponding to a difference between voltages at different timings corresponding to the photocurrents, and wherein

the connection control section switches connections between a connecting point between the first capacitor and the second capacitor of one of the plurality of pixel blocks and a gate of the FET of another of the pixel blocks, through a third capacitor.

6. A sensor comprising:

a plurality of pixel blocks, each pixel block including

one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal, and

an event detecting section configured to detect an event that is a change in electrical signal of any of the pixels; and

a connection control section configured to switch connections between the plurality of the pixel blocks, wherein the event detecting section includes

a current-voltage converting section configured to convert each of photocurrents from the pixels to a voltage,

a subtraction section configured to obtain, with a first capacitor and a second capacitor, a difference signal corresponding to a difference between voltages at different timings corresponding to the photocurrents, and

a quantization section configured to quantize the difference signal and output a quantized value obtained by the quantization, as event data indicating occurrence of an event, and wherein

the sensor further includes a calculation section configured to perform, on the event data from each of the plurality of pixel blocks, calculation based on an operating mode of the connection control section, and to output a result of the calculation.

7. A method for controlling a sensor, the sensor including a plurality of pixel blocks, each pixel block including one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal, the method comprising:

detecting, by an event detecting section, an event that is a change in electrical signal of any of the pixels; and

connecting, by a connection control section, the plurality of pixel blocks to combine photocurrents from the pixels in the plurality of pixel blocks, wherein

the event detecting section includes a current-voltage converting section configured to convert each of the photocurrents to a voltage with a FET (Field Effect Transistor) through which the photocurrents flow, and the connection control section switches connections between sources of the FETs of the plurality of pixel blocks.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2021
From: TAKAHASHI, HIROTSUGU
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 055718/0610 →
Priority Claims (1)
JP JP2018-203439 · Oct 30, 2018 · national
Continuity (1)
Related Publication 20220038645A1 · Feb 3, 2022