Magnetic head and magnetic recording device with stacked body material configurations
According to one embodiment, a magnetic recording device includes a magnetic head, and an electrical circuit. The magnetic head includes a first magnetic pole, a second magnetic pole, and a stacked body provided between the first and the second magnetic poles. The stacked body includes a first nonmagnetic layer, a first magnetic layer provided between the first nonmagnetic layer and the second magnetic pole, a first layer provided between the first magnetic layer and the second magnetic pole, a second nonmagnetic layer provided between the first layer and the second magnetic pole, a second magnetic layer provided between the second nonmagnetic layer and the second magnetic pole, and a third nonmagnetic layer provided between the second magnetic layer and the second magnetic pole. The electrical circuit supplies, to the stacked body, a first current having a first orientation from the second magnetic pole toward the first magnetic pole.
1. A magnetic recording device, comprising:
a magnetic head; and
an electrical circuit,
the magnetic head including
a first magnetic pole,
a second magnetic pole, and
a stacked body provided between the first magnetic pole and the second magnetic pole,
the stacked body including
a first nonmagnetic layer,
a first magnetic layer provided between the first nonmagnetic layer and the second magnetic pole,
a first layer provided between the first magnetic layer and the second magnetic pole,
a second nonmagnetic layer provided between the first layer and the second magnetic pole,
a second magnetic layer provided between the second nonmagnetic layer and the second magnetic pole, and
a third nonmagnetic layer provided between the second magnetic layer and the second magnetic pole,
the first magnetic layer including at least one first element selected from the group consisting of Co, Fe, and Ni, a concentration of the first element in the first magnetic layer being 50 atomic % or more,
the second magnetic layer including at least one second element selected from the group consisting of Fe, Ni, and Co, and at least one third element selected from the group consisting of Cr, V, Mn, Ti, and Sc,
the first layer including at least one selected from the group consisting of Ta, Zr, Hf, Mo, W, Tc, Re, Ru, Rh, Os, Ir, Pd, Pt, Mn, Cr, V, Ti, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu,
the electrical circuit being configured to supply, to the stacked body, a first current having a first orientation from the second magnetic pole toward the first magnetic pole, wherein the first orientation of the first current is opposite to an electron current orientation, and
wherein the first layer contacts the first magnetic layer and the second nonmagnetic layer.
2. The magnetic recording device according to claim 1 , wherein
the second nonmagnetic layer contacts the first layer and the second magnetic layer.
3. The magnetic recording device according to claim 1 , wherein a thickness of the first layer is greater than 0 nm and not more than 3 nm.
4. The magnetic recording device according to claim 1 , wherein
the first nonmagnetic layer includes at least one selected from the group consisting of Ta, Ru, Cr, and Cu.
5. The magnetic recording device according to claim 1 , wherein
the second nonmagnetic layer includes at least one selected from the group consisting of Cu, Ag, Au, and Cr.
6. The magnetic recording device according to claim 1 , wherein
the third nonmagnetic layer includes at least one selected from the group consisting of Cu, Ag, and Au.
7. The magnetic recording device according to claim 1 , wherein
a thickness of the first nonmagnetic layer is not less than 1 nm and not more than 6 nm.
8. The magnetic recording device according to claim 1 , wherein
a thickness of the second nonmagnetic layer is not less than 1 nm and not more than 4 nm.
9. The magnetic recording device according to claim 1 , wherein
a thickness of the third nonmagnetic layer is not less than 1 nm and not more than 4 nm.
10. The magnetic recording device according to claim 1 , wherein
a product of a saturation magnetization of the first magnetic layer and a thickness of the first magnetic layer is not less than 1 nmT and not more than 6 nmT.
11. The magnetic recording device according to claim 1 , wherein
a product of a saturation magnetization of the second magnetic layer and a thickness of the second magnetic layer is not less than 1 nmT and not more than 9 nmT.
12. The magnetic recording device according to claim 1 , wherein
a thickness of the second magnetic layer is not less than 0.8 times and not more than 3 times a thickness of the first magnetic layer.
13. The magnetic recording device according to claim 1 , wherein
the stacked body further includes a third magnetic layer provided between the third nonmagnetic layer and the second magnetic pole,
the third magnetic layer includes at least one fourth element selected from the group consisting of Co, Fe, and Ni, and
a concentration of the fourth element in the third magnetic layer is 50 atomic % or more.
14. The magnetic recording device according to claim 1 , wherein
a change rate of an electrical resistance of the stacked body with respect to a change of a current density flowing in the stacked body is positive when the current density is in a first range, negative when the current density is in a second range, and positive when the current density is in a third range, and
a current density of the first current is within the third range.