Tungsten feature fill with nucleation inhibition
Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.
1. A method comprising:
providing a substrate including a feature having one or more feature openings and a feature interior, the feature interior defined at least in part by a feature sidewall extending from a feature opening, and
selectively inhibiting tungsten nucleation in the feature interior such that there is a differential inhibition profile along a feature axis, such that the feature sidewall is more inhibited near the feature opening than deeper into the feature interior, by exposing the feature to a vapor-phase inhibition chemistry in a non-plasma process.
2. The method of claim 1 , further comprising depositing a tungsten layer in the feature prior to selective inhibition.
3. The method of claim 2 , wherein the tungsten layer is conformally deposited in the feature.
4. The method of claim 1 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to comprises a nitrogen-containing compound.
5. The method of claim 1 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to exposing the feature to pulses of the vapor-phase inhibition chemistry.
6. The method of claim 1 , wherein the selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to a nitrogen-containing and hydrogen-containing compound.
7. The method of claim 1 , wherein selectively inhibiting tungsten nucleation comprises passivating a surface without forming a compound material.
8. The method of claim 1 , wherein selectively inhibiting tungsten nucleation comprises passivating a surface by forming a compound material on the surface.
9. The method of claim 1 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to comprises ammonia (NH 3 ).
10. The method of claim 1 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to comprises a nitrogen-containing compound and a tungsten-containing precursor.
11. The method of claim 10 , wherein the nitrogen-containing compound and tungsten-containing precursor are in deposition station housing the substrate at the same time.
12. The method of claim 10 , wherein the nitrogen-containing compound and tungsten-containing precursor are introduced to a deposition station housing the substrate sequentially.
13. The method of claim 1 , further comprising selectively depositing tungsten in the feature in accordance with the differential inhibition profile.
14. The method of claim 13 , wherein the selective inhibition and selective deposition operations are performed in the same chamber.
15. The method of claim 13 , wherein the selective inhibition and selective deposition operations are performed in different chambers.
16. A method comprising:
providing a substrate including a feature having one or more feature openings and a feature interior, and
selectively inhibiting tungsten nucleation in the feature such that there is a differential inhibition profile along a feature axis by exposing the feature to a vapor-phase inhibition chemistry in a non-plasma process, wherein providing a substrate including a feature having one or more feature openings and a feature interior comprises providing a feature having a first tungsten layer deposited therein, wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the first tungsten layer to the vapor-phase inhibition chemistry in the non-plasma process.
17. The method of claim 16 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to comprises a nitrogen-containing compound.
18. The method of claim 16 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to exposing the feature to pulses of the vapor-phase inhibition chemistry.
19. The method of claim 16 , wherein the selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to a nitrogen-containing and hydrogen-containing compound.
20. The method of claim 16 , wherein selectively inhibiting tungsten nucleation comprises passivating a surface without forming a compound material.
21. The method of claim 16 , wherein selectively inhibiting tungsten nucleation comprises passivating a surface by forming a compound material on the surface.
22. The method of claim 16 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to comprises ammonia (NH 3 ).
23. The method of claim 16 , wherein selectively inhibiting tungsten nucleation in the feature comprises exposing the feature to comprises a nitrogen-containing compound and a tungsten-containing precursor.
24. The method of claim 23 , wherein the nitrogen-containing compound and tungsten-containing precursor are in deposition station housing the substrate at the same time.
25. The method of claim 23 , wherein the nitrogen-containing compound and tungsten-containing precursor are introduced to a deposition station housing the substrate sequentially.
26. The method of claim 16 , further comprising selectively depositing tungsten in the feature in accordance with the differential inhibition profile.
27. The method of claim 26 , wherein the selective inhibition and selective deposition operations are performed in the same chamber.
28. The method of claim 26 , wherein the selective inhibition and selective deposition operations are performed in different chambers.