Semiconductor package and electronic device having the same

1. A semiconductor package, comprising:

a substrate, comprising a wiring layer;

a heating element, disposed on a first surface of the substrate and connected to the wiring layer;

a heat radiating part coupled to the heating element;

a signal transfer part, configured to electrically connect the substrate to a main substrate;

at least one general element, disposed on the first surface of the substrate, and having a mounting height, from the first surface of the substrate, higher than a height of the heating element; and

a sealing part, filled between the signal transfer part, the heating element, and the at least one general element, and configured to enclose the signal transfer part and the heating element,

wherein the heat radiating part comprises a heat transfer part connected to the heating element and a plurality of heat radiating terminals spaced apart from each other and configured to connect the heat transfer part and the main substrate to each other,

wherein each of the plurality of heat radiating terminals comprises a first portion enclosed by the sealing part and a second portion exposed onto a surface of the sealing part and contacting a heat radiating pad disposed on the main substrate,

wherein the sealing part consists of a single insulating material,

wherein the signal transfer part comprises a connection conductor comprising one end connected to the substrate and another end connected to the main substrate through a connection terminal, and an insulating part enclosing the connection conductor, and

wherein the semiconductor package further comprises a bonding layer interposed between the heating element and the heat transfer part.

2. The semiconductor package of claim 1 , wherein the heat transfer part has a flat plate shape or a block shape and comprises a metal.

3. The semiconductor package of claim 1 , further comprising connection terminals disposed on one side of the signal transfer part and connected to the main substrate,

wherein the heat radiating terminal comprises a material in common with the connection terminal and has substantially the same size as the connection terminal.

4. The semiconductor package of claim 1 , wherein the single insulating material is epoxy molding compound (EMC).

5. The semiconductor package of claim 1 , wherein the heat transfer part is embedded in the sealing part, and

the heat radiating terminal penetrates through the sealing part and is connected to the heat transfer part.

6. The semiconductor package of claim 5 , wherein the heat transfer part comprises one or more coupling grooves, and

a portion of the sealing part is disposed in the one or more coupling grooves.

7. The semiconductor package of claim 6 , wherein the one or more coupling grooves comprise a hole penetrating through the heat transfer part, and

the one or more coupling grooves are disposed to be distributed over an area of the heat transfer part.

8. The semiconductor package of claim 2 , wherein the heat transfer part comprises a step disposed in an edge of at least one surface of a first surface bonded to the heating element and a second surface bonded to the heat radiating terminal of the heat transfer part.

9. The semiconductor package of claim 4 , wherein a portion of the heat transfer part is exposed externally of the sealing part, and

the heat radiating terminal is connected to the portion of the heat transfer part exposed externally of the sealing part.

10. The semiconductor package of claim 4 , wherein the heat transfer part comprises a case comprising an internal space, and

the heating element is disposed in the internal space of the case.

11. The semiconductor package of claim 10 , wherein the case includes one or more through-holes, and

the sealing part is disposed in the internal space of the case through the through-holes.

12. The semiconductor package of claim 4 , wherein the signal transfer part comprises melted and cured solder balls in the sealing part.

13. The semiconductor package of claim 4 , wherein a surface area of the heat transfer part facing the heating element is wider than a surface area of the heating element facing the heat transfer part.

14. The semiconductor package of claim 1 , wherein the sealing part is disposed between the substrate and the main substrate.

15. The semiconductor package of claim 1 , wherein the general element is at least one of an active element and a passive element.