3-dimensional NAND flash memory device, method of fabricating the same, and method of driving the same

1. A 3-dimensional NAND flash memory device, comprising,

a semiconductor channel layer extending over a substrate in a first direction perpendicular to a surface of the substrate;

an information storing layer extending along a sidewall of the semiconductor channel layer in the first direction;

control gates each surrounding at least a portion of the semiconductor channel layer, with the information storing, layer between the semiconductor channel layer and the control gates;

an interlayer insulating layer being disposed between the control gates in the first direction and separating the control gates from each other;

a fixed charge region disposed at an interface of the interlayer insulating layer and the information storing layer or in a portion of the information storing layer between the control gates in the first direction; and

an electrically doped region which is induced by the fixed charge region, and is disposed at a partial surface of the semiconductor channel, layer facing the fixed charge region.

2. The 3-dimensional NAND flash memory device of claim 1 , wherein the fixed charge region disposed at the interface of the interlayer insulating layer and the information storing layer includes a dangling bond of hydrogen molecules formed by a reaction of hydrogen bonding between hydrogen ions (H + ) and the interlayer insulating layer at the interface.

3. The 3-dimensional NAND flash memory device of claim 2 , wherein when the interlayer insulating layer includes silicon oxide, the fixed charge region has a Si—H bond.

4. The 3-dimensional NAND flash memory device of claim 1 , wherein the fixed charge region disposed in the portion of the information storing layer between the control gates is charged by fixed charges accumulated by a fringing field induced between the control gates and the semiconductor channel layer.

5. The 3-dimensional NAND flash memory device of claim 1 , further comprising a work function control layer having a work function smaller than that of the control gates on sidewalk of the control gates.

6. The 3-dimensional NAND flash memory device of claim 5 , wherein a thickness of the interlayer insulating layer may be greater than a thickness of the control gate.

7. The 3-dimensional NAND flash memory device of claim 1 , wherein the information storing layer includes a gate insulating layer on the semiconductor channel layer, a data storing layer on the gate insulating layer, and a blocking insulating layer on the data storing layer.

8. The 3-dimensional NAND flash memory device of claim 7 , wherein the data storing layer includes one selected from the group consisting of SiO 2 , SiON, Si 3 N 4 , SRN (Si rich nitride), HfO 2 , HfSiO, HfSiON, HfON, HfAlO, Al 2 O 3 , AlN, and a combination thereof.

9. The 3-dimensional NAND flash memory device of claim 7 , wherein the gate insulating layer includes one selected from the group consisting of SiO 2 , Si 3 N 4 , SiON, HfO 2 , HfSiO, Al 2 O 3 , ZrO 2 , and a combination thereof.

10. The 3-dimensional NAND flash memory device of claim 7 , wherein the blocking insulating layer includes one selected from the group consisting of Al 2 O 3 , SiO 2 , HfO 2 , ZrO 2 , Ta 2 O 5 , LaO, LaAlO, LaHfO, HfAlO, and a combination thereof.

11. The 3-dimensional NAND flash memory device of claim 1 , wherein the semiconductor channel layer has a cylindrical shape, and a core insulator is inserted into the semiconductor channel layer to form a semiconductor pillar.