Surface acoustic wave device on composite substrate
A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.
1. A surface acoustic wave device using a longitudinally polarized guided wave, comprising: a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein a crystalline orientation of the piezoelectric layer with respect to the base substrate is such that a phase velocity of the longitudinally polarized guided wave is below a critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes.
2. The surface acoustic wave device of claim 1 , wherein the piezoelectric layer is a single crystal.
3. The surface acoustic wave device of claim 1 , wherein a thickness of the piezoelectric layer is on the order of a sub-wavelength range or smaller.
4. The surface acoustic wave device of claim 1 , wherein the base substrate has a shear wave velocity of more than 5600 m/s.
5. The surface acoustic wave device of claim 1 , further comprising a dielectric layer sandwiched between the base substrate and the piezoelectric layer.
6. The surface acoustic wave device of claim 5 , wherein the dielectric layer has a thickness of less than 800 nm.
7. The surface acoustic wave device of claim 1 , wherein the piezoelectric layer comprises lithium tantalate (LiTaO 3 ) or lithium niobate (LiNbO 3 ).
8. The surface acoustic wave device of claim 7 , wherein the piezoelectric layer comprises lithium tantalate (LiTaO 3 ) with a crystallographic orientation defined as (YX)/θ according to the standard IEEE 1949 Std-176, with θ, an angle of the crystallographic orientation being between 40° and 65°.
9. The surface acoustic wave device of claim 8 , wherein a propagation direction of the longitudinally polarized guided wave is at 90° of a crystallographic X-axis.
10. The surface acoustic wave device of claim 7 , wherein the piezoelectric layer comprises lithium tantalate (LiTaO 3 ) and the base substrate comprises silicon.
11. The surface acoustic wave device of claim 1 , wherein a relative thickness h/λ and/or a metallization ratio w/p of electrode fingers of a transducer structure on the piezoelectric layer, h and w being the relative thickness and width of the electrode fingers, respectively, and p and λ being an electrode pitch and wavelength of the transducer structure, respectively, are such that electromechanical coupling k s 2 of the longitudinally polarized guided wave in the piezoelectric layer is between 0.5% and 2.5%.
12. The surface acoustic wave device of claim 7 , wherein the piezoelectric layer comprises lithium niobate (LiNbO 3 ) with a crystallographic orientation (YX/t)/θ/90° according to the standard IEEE 1949 Std-176, with θ, an angle of the crystallographic orientation and a propagation direction of the longitudinally polarized guided wave is at 90° of a crystallographic X-axis, so that θ has a value between 35° and 40° or between 100° and 150°.
13. The surface acoustic wave device of claim 7 , wherein the piezoelectric layer comprises lithium niobate (LiNbO 3 ) and the base substrate comprises diamond.
14. The surface acoustic wave device of claim 7 , wherein the piezoelectric layer comprises lithium niobate (LiNbO 3 ) with a crystallographic orientation (YX/t)/θ/Ψ according to the standard IEEE 1949 Std-176, with θ, an angle of the crystallographic orientation being between 40° and 60 ″, and a propagation direction of the longitudinally polarized guided wave Ψ is between 80° and 100°.
15. The surface acoustic wave device of claim 7 , wherein the piezoelectric layer comprises lithium niobate (LiNbO 3 ) and the base substrate comprises sapphire.
16. A surface acoustic wave filter device, comprising at least one surface acoustic wave device (SAW) according to claim 1 .
17. A surface acoustic wave resonator device comprising at least one surface acoustic wave device (SAW) according to claim 1 .
18. A method of fabrication of a surface acoustic wave device as described in claim 1 , comprising the steps of:
a) providing a piezoelectric layer over a base substrate; and
b) providing a transducer structure on the piezoelectric layer;
wherein, in step a), the piezoelectric layer is provided such that the piezoelectric layer has a crystalline orientation with respect to the base substrate such that a phase velocity of the longitudinally polarized guided wave is below a critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes.
19. The method of claim 18 , wherein at least one of the steps a) orb) comprises a layer transfer process.
20. The method of claim 18 , wherein step b) comprises an I-line lithography patterning step to obtain a transducer structure in the surface acoustic wave device allowing a frequency limit of more than 2 GHz.