IP Library › Granted Patent US 11,440,793
Granted Patent B2
US 11,440,793 · App. 16/726,272 · Granted Sep 13, 2022

Hydrogen sensor on medium or low temperature solid micro heating platform

Inventors: Guifu Ding (Shanghai, CN); Qi Liu (Shanghai, CN); Yan Wang (Shanghai, CN); Yunna Sun (Shanghai, CN)
Assignee: Shanghai Jiaotong University
B81B7/0087B81B7/0019G01N33/005B81B2201/0214
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,440,793
App. No.
16/726,272
Granted
Sep 13, 2022
Kind
B2
Abstract

Described herein is a hydrogen sensor on medium or low temperature solid micro heating platform, comprising: a substrate; a thermal-insulating layer disposed above the substrate; a heating structure disposed above the thermal-insulating layer, and thermally and electrically isolated from the substrate by the thermal-insulating layer; a thermal-conducting layer covering the heating structure; and a sensitive layer disposed on the thermal-conducting layer. The sensitive layer can be heated to a set temperature by the heating structure to improve sensitivity and reduce the response time.

Claims (34)

1. A hydrogen sensor on medium or low temperature solid micro heating platform, comprising:

a substrate;

a thermal-insulating layer disposed above the substrate;

a heating structure disposed above the thermal-insulating layer, and isolated, thermally and electrically, from the substrate by the thermal-insulating layer;

a thermal-conducting layer covering the heating structure, wherein the thermal-conducting layer has a patterned structure to reduce the area of the thermal-conducting layer covering the heating structure, thereby reducing the heat dissipation; and

a sensitive layer disposed on the thermal-conducting layer, wherein the sensitive layer is heated to a set temperature by the heating structure to improve sensitivity and reduce the response time, wherein the material of the sensitive layer is a hydrogen-sensitive material including palladium (Pd) or palladium-based alloy.

2. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein the material of the substrate is glass, ceramics, or organic substrate.

3. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein the thermal-insulating layer is disposed on the bottom and sides of the heating structure.

4. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein the material of the thermal-insulating layer is an insulating material having a thermal conductivity of less than 0.12 W/(m*K);

wherein the material of the thermal-insulating layer is organic colloid doped with inorganic nanoparticles or whiskers of low thermal conductivity; or

wherein the material of the thermal-insulating layer is polyimide doped with 2 wt %-10 wt % nano silicon dioxide with a thickness of 30 microns to 100 microns.

5. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein the heating structure is a heating wire or a heating film.

6. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 5 , wherein the heating structure is a platinum (Pt) heating wire with a line width of 5 microns to 10 microns, and a thickness of 100 nanometers to 300 nanometers.

7. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein the material of the thermal-conducting layer is an insulating material having a thermal conductivity of more than 1.5 W/(m*K);

wherein the material of the thermal-conducting layer is organic colloid doped with inorganic nanoparticles or whiskers of high thermal conductivity; or

wherein the material of the thermal-conducting layer is polyimide doped with 2 wt %-10 wt % nano silicon carbide whiskers with a thickness of 4 microns to 10 microns.

8. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein thickness of the sensitive layer is from 50 nanometers to 200 nanometers.

9. The hydrogen sensor on medium or low temperature solid micro heating platform of claim 1 , wherein the operating temperature of the hydrogen sensor is no more than 350° C.

10. A hydrogen sensor on medium or low temperature solid micro heating platform, comprising:

a substrate;

a thermal-insulating layer disposed above the substrate, wherein the material of the thermal-insulating layer is an insulating material having a thermal conductivity of less than 0.12 W/(m*K);

wherein the material of the thermal-insulating layer is organic colloid doped with inorganic nanoparticles or whiskers of low thermal conductivity; or

wherein the material of the thermal-insulating layer is polyimide doped with 2 wt %-10 wt % nano silicon dioxide with a thickness of 30 microns to 100 microns;

a heating structure disposed above the thermal-insulating layer, and isolated, thermally and electrically, from the substrate by the thermal-insulating layer;

a thermal-conducting layer covering the heating structure; and

a sensitive layer disposed on the thermal-conducting layer, wherein the sensitive layer is heated to a set temperature by the heating structure to improve sensitivity and reduce the response time, wherein the material of the sensitive layer is a hydrogen-sensitive material including palladium (Pd) or palladium-based alloy.

11. A hydrogen sensor on medium or low temperature solid micro heating platform, comprising:

a substrate;

a thermal-insulating layer disposed above the substrate;

a heating structure disposed above the thermal-insulating layer, and isolated, thermally and electrically, from the substrate by the thermal-insulating layer;

a thermal-conducting layer covering the heating structure, wherein the material of the thermal-conducting layer is an insulating material having a thermal conductivity of more than 1.5 W/(m*K);

wherein the material of the thermal-conducting layer is organic colloid doped with inorganic nanoparticles or whiskers of high thermal conductivity; or

wherein the material of the thermal-conducting layer is polyimide doped with 2 wt %-10 wt % nano silicon carbide whiskers with a thickness of 4 microns to 10 microns; and

a sensitive layer disposed on the thermal-conducting layer, wherein the sensitive layer is heated to a set temperature by the heating structure to improve sensitivity and reduce the response time, wherein the material of the sensitive layer is a hydrogen-sensitive material including palladium (Pd) or palladium-based alloy.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 24, 2019
From: DING, GUIFU; LIU, QI; WANG, YAN; SUN, YUNNA
To: SHANGHAI JIAOTONG UNIVERSITY
Reel/Frame 051364/0089 →
Priority Claims (1)
CN 201910073967.5 · Jan 25, 2019 · national
Continuity (1)
Related Publication 20200239300A1 · Jul 30, 2020