Method of performing atomic layer deposition
In an embodiment, a method of manufacturing a semiconductor device includes preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber and flowing a second precursor to form a hydrophobic layer over the dielectric coat. In addition one or more deposition cycles are performed. Next, the second precursor is flowed again to repair the hydrophobic layer.
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a deposition processing chamber, the preparing comprising:
flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber; and
flowing a second precursor to form a hydrophobic layer over the dielectric coat;
performing one or more deposition cycles; and
after performing the one or more deposition cycles, flowing the second precursor to repair the hydrophobic layer.
2. The method of claim 1 , wherein the first precursors comprise a silicon precursor and a first oxygen precursor.
3. The method of claim 2 , wherein each of the one or more deposition cycles comprises:
flowing a second oxygen precursor; and
flowing a metal precursor.
4. The method of claim 1 , wherein the second precursor comprises a fluorinated hydrocarbon functional group.
5. The method of claim 4 , wherein the dielectric coat comprises silicon oxide.
6. The method of claim 1 , wherein the one or more deposition cycles form aluminum oxide.
7. The method of claim 6 , wherein the aluminum oxide comprises a hardmask for patterning.
8. A method of forming a semiconductor device, the method comprising:
depositing a metal oxide layer over a wafer, the depositing the metal oxide layer comprising:
depositing a silicon oxide coat over an inner sidewall of a processing chamber;
flowing a hydrophobic precursor into the processing chamber to form a hydrophobic layer over the silicon oxide coat;
after flowing the hydrophobic precursor, placing the wafer into the processing chamber;
flowing an oxygen precursor over the wafer;
flowing a metal precursor over the wafer; and
patterning the metal oxide layer.
9. The method of claim 8 , wherein the metal oxide layer comprises aluminum oxide.
10. The method of claim 8 , wherein the hydrophobic layer is bonded to the silicon oxide coat.
11. The method of claim 8 , wherein the steps of flowing the oxygen precursor over the wafer and flowing the metal precursor over the wafer are performed a predetermined number of times in alternating fashion.
12. The method of claim 11 further comprising, after the predetermined number of times:
removing the wafer from the processing chamber; and
repeating the step of flowing the hydrophobic precursor.
13. The method of claim 8 , wherein the hydrophobic precursor is a fluorinated hydrocarbon.
14. The method of claim 8 , wherein the depositing a metal oxide layer over the wafer further comprises:
depositing the silicon oxide coat within openings in a showerhead of the processing chamber; and
forming the hydrophobic layer over the silicon oxide coat within the openings in the showerhead of the processing chamber.
15. The method of claim 8 further comprising, before the flowing the hydrophobic precursor, flowing water over the silicon oxide coat.
16. A method of manufacturing a semiconductor device, the method comprising:
performing first processing steps on a first wafer;
performing a first treatment process on an ALD tool comprising forming a hydrophobic coat over inner sidewalls of the ALD tool;
placing the first wafer into the ALD tool;
performing a first ALD process on the first wafer;
removing the first wafer from the ALD tool;
performing second processing steps on a second wafer;
after removing the first wafer from the ALD tool, placing the second wafer into the ALD tool;
performing a second ALD process on the second wafer;
removing the second wafer from the ALD tool; and
after removing the second wafer from the ALD tool, performing a second treatment process on the ALD tool comprising replenishing the hydrophobic coat over the inner sidewalls of the ALD tool.
17. The method of claim 16 , wherein the performing the first treatment process comprises:
flowing silicon oxide precursors to form a silicon oxide coat over the inner sidewalls of the ALD tool; and
flowing a hydrophobic precursor to form a hydrophobic coat over the silicon oxide coat.
18. The method of claim 17 , wherein the performing the second treatment process comprises flowing the hydrophobic precursor to replenish the hydrophobic coat.
19. The method of claim 16 , wherein the first ALD process comprises depositing a metal oxide layer as a hardmask for patterning.
20. The method of claim 16 , wherein the first ALD process comprises depositing a metal oxide layer as part of an etch stop layer.