Crystalline silicon solar cell and preparation method therefor, and photovoltaic module
A crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. The gallium oxide layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index.
1. A crystalline silicon solar cell, comprising
a crystalline silicon substrate having a P-type conductivity,
a first tunneling passivation layer arranged on a surface of one side of the crystalline silicon substrate,
a first doped silicon layer arranged on the first tunneling passivation layer and having the p-type conductivity,
a gallium oxide layer arranged on the first doped silicon layer and in direct contact with the first doped silicon layer,
a first covering layer arranged on the gallium oxide layer, and
a first electrode arranged on the first covering layer and in contact with the first doped silicon layer;
wherein the first doped silicon layer covers a partial region of the first tunneling passivation layer, and the gallium oxide layer is also arranged at a region of the first tunneling passivation layer where the first doped silicon layer is not arranged.
2. The crystalline silicon solar cell according to claim 1 , characterized in that the crystalline silicon solar cell further comprises:
an emitter layer arranged on a surface of another side, opposite to the first tunneling passivation layer, of the crystalline silicon substrate, and having an N-type conductivity,
a second covering layer arranged on the emitter layer, and
a second electrode arranged on the second covering layer and in contact with the emitter layer.
3. The crystalline silicon solar cell according to claim 1 , characterized in that the crystalline silicon solar cell further comprises:
an emitter layer arranged on a surface of another side, opposite to the first tunneling passivation layer, of the crystalline silicon substrate, and having an N-type conductivity,
a second tunneling passivation layer arranged on the emitter layer,
a second doped silicon layer arranged on the second tunneling passivation layer and having an N-type conductivity,
a second covering layer arranged on the second doped silicon layer, and
a second electrode arranged on the second covering layer and in contact with the second doped silicon layer;
wherein the second doped silicon layer covers a partial region of the second tunneling passivation layer, and the second covering layer is also arranged at a region of the second tunneling passivation layer where the second doped silicon layer is not arranged.
4. The crystalline silicon solar cell according to claim 1 , characterized in that the gallium oxide layer has a thickness of 10-90 nm.
5. A photovoltaic module, comprising a cover plate, a first encapsulant film, a cell string, a second encapsulant film and a backplane disposed in sequence, the cell string comprises a plurality of solar cells, and each of the plurality of the solar cells is the crystalline silicon solar cell according to claim 1 .