Memory systems comprising non-volatile memory devices

1. A memory system, comprising:

a non-volatile memory device including an array of memory cells, the array including a plurality of memory blocks and a plurality of pages, each separate memory block of the plurality of memory blocks including a separate, respective set of one or more pages of the plurality of pages; and

controller circuitry configured to control an operation of the non-volatile memory device, the controller circuitry including

processing circuitry configured to perform a recovery operation for the non-volatile memory device in response to a determination that a specific event has occurred at the memory system during a program operation of the non-volatile memory device, the performing a recovery operation including

determining status information associated with a first group including at least one page of the plurality of pages,

determining a quantity of a particular set of pages, of the plurality of pages, included in a second group based on the status information associated with the first group, and

programming dummy data for one or more pages, of the particular set of pages included in the second group.

2. The memory system of claim 1 , wherein the performing a recovery operation includes selecting, as the first group, a selected page, of the plurality of pages, corresponding to a logical address within a particular range based on a logical address of a reference page, of the plurality of pages, in which the program operation of the memory system is interrupted due to the specific event.

3. The memory system of claim 1 , wherein the performing a recovery operation includes

applying at least one read voltage to each page, of the plurality of pages, included in the first group,

determining a threshold voltage distribution associated with a memory cell, of the array of memory cells, included in the first group based on information obtained based on applying the read voltage, and

determining the status information associated with the first group based on the threshold voltage distribution associated with the memory cell.

4. The memory system of claim 1 , wherein the performing a recovery operation includes determining the status information associated with the first group based on

an erase count of a particular memory block, of the plurality of memory blocks, including the first group,

a read count of the particular memory block including the first group, or

both the erase count and the read count.

5. The memory system of claim 1 , wherein the performing a recovery operation includes determining the status information associated with the first group based on a quantity of pages including valid data among a first set of pages included in a same memory block as a reference page in which the program operation of the memory system is interrupted due to the specific event.

6. The memory system of claim 5 , wherein

the controller circuitry further includes cache memory circuitry storing a mapping table including information associated with a mapping relationship between a physical address and a logical address corresponding to each page of the plurality of pages of the non-volatile memory device, and

the performing a recovery operation includes determining the quantity of pages including the valid data based on referring to the mapping table.

7. The memory system of claim 1 , wherein

the performing a recovery operation includes determining the status information based on temperature information of a reference page in which a particular program operation is interrupted due to the specific event, and

the temperature information includes a temperature of the reference page at a time concurrent with occurrence of the specific event.

8. The memory system of claim 1 , wherein the performing a recovery operation includes determining the status information based on an error correction code (ECC) of the first group.

9. The memory system of claim 8 , wherein the performing a recovery operation includes

performing a read operation on each page included in the first group,

acquiring ECC parity data from data to be read corresponding to the read operation, and

determining the status information based on the acquired ECC parity data.

10. The memory system of claim 1 , wherein the performing a recovery operation includes determining the status information based on

a threshold voltage distribution associated with a particular set of memory cells included in the first group,

an erase count of a particular memory block, of the plurality of memory blocks, including the first group,

a read count of the particular memory block including the first group,

a quantity of valid pages of a memory block including a reference page in which a particular program operation is interrupted,

temperature information associated with the first group, or

any combination thereof.

11. The memory system of claim 1 , wherein the specific event is a sudden power off (SPO) of the non-volatile memory device.

12. A memory system, comprising:

a non-volatile memory device including an array of memory cells, the array including a plurality of memory blocks and a plurality of pages, each separate memory block of the plurality of memory blocks including a separate, respective set of one or more pages of the plurality of pages; and

controller circuitry configured to control an operation of the non-volatile memory device, the controller circuitry including

processing circuitry configured to perform a recovery operation for the non-volatile memory device in response to a determination that a sudden power off (SPO) occurs during a program operation of the non-volatile memory device, the performing a recovery operation including

determining status information associated with a first group including at least one page of the plurality of pages,

determining a program condition associated with dummy data to be programmed in a second group based on the status information associated with the first group, and

programming the dummy data in one or more pages included in the second group based on the program condition.

13. The memory system of claim 12 , wherein the performing a recovery operation includes selecting the first group based on a mapping table representing a mapping relationship between a physical address and a logical address corresponding to each page of the plurality of pages included in the non-volatile memory device.

14. The memory system of claim 13 , wherein the performing a recovery operation includes selecting, as the first group, a page corresponding to a logical address within a particular range based on a logical address of a reference page in which a particular program operation is interrupted due to the SPO.

15. The memory system of claim 12 , wherein the performing a recovery operation includes variably applying, based on the status information,

a magnitude of a program operation voltage applied to a program operation of the dummy data,

a time of applying the program operation voltage,

a magnitude of a verify voltage, or

any combination thereof.

16. The memory system of claim 15 , wherein the performing a recovery operation includes, in response to a determination that a page included in the second group stores two or more bits per memory cell,

selecting

magnitudes of separate, respective program operation voltages applied to the program operation of the dummy data,

times of applying the separate, respective program operation voltages,

magnitudes of separate, respective verify voltages, or

any combination thereof, and

variably applying each of the selected magnitudes and/or times.

17. The memory system of claim 12 , wherein the performing a recovery operation includes determining a quantity of pages included in the second group based on the status information.

18. A memory system, comprising:

a non-volatile memory device including an array of memory cells, the array including a plurality of memory blocks and a plurality of pages, each separate memory block of the plurality of memory blocks including a separate, respective set of one or more pages of the plurality of pages; and

controller circuitry configured to control an operation of the non-volatile memory device, the controller circuitry including

processing circuitry configured to perform a recovery operation based on programming dummy data in a first group including at least one page of the plurality of pages, based on status information of a target group, in response to a determination that a sudden power off (SPO) occurs during a program operation of the non-volatile memory device, the performing a recovery operation including

determining the target group or the first group based on arrangement information associated with each page of the plurality of pages arranged on a semiconductor chip of the non-volatile memory device.

19. The memory system of claim 18 , wherein the performing a recovery operation includes determining the target group based on arrangement information associated with a reference word line in which a particular program operation is interrupted due to the SPO.

20. The memory system of claim 18 , wherein

the controller circuitry further includes cache memory circuitry storing the arrangement information, and

the performing a recovery operation includes determining the target group based on the arrangement information obtained based on accessing the cache memory circuitry.