Integrated circuit devices including metal wires having etch stop layers on sidewalls thereof
Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a first insulating layer and a plurality of metal wires on the first insulating layer. The plurality of metal wires may include a first metal wire including a first upper surface and a first lower surface that faces the first insulating layer and a second metal wire including a second upper surface and a second lower surface that faces the first insulating layer and is coplanar with the first lower surface. The first metal wire may have a first width monotonically decreasing from the first lower surface to the first upper surface, and the second metal wire may have a second width monotonically increasing from the second lower surface to the second upper surface.
1. An integrated circuit device comprising:
a first insulating layer;
a plurality of metal wires on the first insulating layer,
wherein the plurality of metal wires comprises:
a first metal wire comprising a first upper surface and a first lower surface that faces the first insulating layer, the first metal wire having a first width monotonically decreasing from the first lower surface to the first upper surface; and
a second metal wire comprising a second upper surface and a second lower surface that faces the first insulating layer and is coplanar with the first lower surface, the second metal wire having a second width monotonically increasing from the second lower surface to the second upper surface;
a second insulating layer on the first insulating layer; and
a lower etch stop layer extending between the first insulating layer and the second insulating layer and extending on a sidewall of the first metal wire,
wherein the second metal wire extends through the lower etch stop layer.
2. The integrated circuit device of claim 1 , wherein the first width of the first lower surface of the first metal wire is less than the second width of the second upper surface of the second metal wire.
3. The integrated circuit device of claim 1 , wherein the first metal wire comprises a plurality of first metal wires that are spaced apart from each other in a first direction, and the second metal wire comprises two second metal wires that are spaced apart from each other in the first direction, and
the plurality of first metal wires are between the two second metal wires.
4. The integrated circuit device of claim 1 , wherein the second metal wire comprises a first metal element, and the first metal wire is devoid of the first metal element.
5. The integrated circuit device of claim 4 , wherein both the first metal wire and the second metal wire comprise a second metal element.
6. The integrated circuit device of claim 5 , wherein the second metal element is ruthenium (Ru), molybdenum (Mo), cobalt (Co), or tungsten (W).
7. The integrated circuit device of claim 5 , wherein the second metal wire comprises a first metal layer comprising the first metal element, and a second metal layer comprising the second metal element, and
the second metal layer extends from a lower surface of the first metal layer onto a sidewall of the first metal layer.
8. The integrated circuit device of claim 4 , wherein the first metal element is copper (Cu).
9. The integrated circuit device of claim 1 , further comprising:
an upper etch stop layer on the first metal wire,
wherein the upper etch stop layer comprises a lower surface contacting the first upper surface of the first metal wire, and the second upper surface of the second metal wire is not higher than the lower surface of the upper etch stop layer.
10. An integrated circuit device comprising:
a first insulating layer and a second insulating layer that are sequentially stacked;
a lower etch stop layer extending between the first insulating layer and the second insulating layer;
a plurality of metal wires on the first insulating layer and in the second insulating layer, the plurality of metal wires comprising a first metal wire and a second metal wire; and
an upper etch stop layer on the first metal wire,
wherein the lower etch stop layer extends on a sidewall of the first metal wire from a lower surface to an upper surface of the first metal wire, and the second metal wire extends through the lower etch stop layer, and
the upper etch stop layer comprises a lower surface contacting the upper surface of the first metal wire, and an upper surface of the second metal wire is not higher than the lower surface of the upper etch stop layer.
11. The integrated circuit device of claim 10 , wherein the lower surface of the first metal wire is coplanar with a lower surface of the second metal wire.
12. The integrated circuit device of claim 10 , wherein the second metal wire comprises a first metal element, and the first metal wire is devoid of the first metal element.
13. The integrated circuit device of claim 12 , wherein both the first metal wire and the second metal wire comprise a second metal element.