Method of forming guard ring and circuit device
A method includes implanting a first guard ring around a periphery of core circuitry. The implanting of the first guard ring includes implanting a first component a first distance from the core circuitry on a first side of the core circuitry, and implanting a second component a second distance from the core circuitry on a second side of the core circuitry, wherein the second distance is greater than the first distance. The method further includes implanting a second guard ring around the periphery of the core circuitry. The implanting of the second guard ring includes implanting a third component a third distance from the core circuitry on the first side of the core circuitry, and implanting a fourth component a fourth distance from the core circuitry on the second side of the core circuitry, wherein the third distance is greater than the fourth distance.
1. A method comprising:
implanting a first guard ring around a periphery of core circuitry, wherein the implanting of the first guard ring comprises:
implanting a first component a first distance from the core circuitry on a first side of the core circuitry, and
implanting a second component a second distance from the core circuitry on a second side of the core circuitry, wherein the second distance is greater than the first distance; and
implanting a second guard ring around the periphery of the core circuitry, wherein the implanting of the second guard ring comprises:
implanting a third component a third distance from the core circuitry on the first side of the core circuitry, and
implanting a fourth component a fourth distance from the core circuitry on the second side of the core circuitry, wherein the third distance is greater than the fourth distance.
2. The method of claim 1 , wherein the implanting the first component comprises implanting the first component between the third component and the core circuitry.
3. The method of claim 2 , wherein the implanting the fourth component comprises implanting the fourth component between the second component and the core circuitry.
4. The method of claim 2 , wherein the implanting the fourth component comprises implanting the fourth component in contact with the second component, and implanting the fourth component spaced from the first component.
5. The method of claim 2 , wherein the implanting the first component comprises implanting the first component sequentially with implanting the second component.
6. A method of making a circuit device comprising:
forming a guard ring surrounding core circuitry, wherein forming the guard ring comprises:
forming a first plurality of fin structures arranged in a first direction parallel to a first side of the core circuitry, wherein adjacent fin structures of the first plurality of fin structures are separated by a first distance, and
forming a second plurality of fin structures arranged in a second direction parallel to a second side of the core circuitry, wherein adjacent fin structures of the second plurality of fin structures are separated by a second distance, and the second distance is smaller than the first distance.
7. The method of claim 6 , wherein forming the first plurality of fin structures comprises forming each of the first plurality of fin structures extending in a third direction.
8. The method of claim 7 , wherein forming the second plurality of fin structures comprises forming each of the second plurality of fin structures extending in the third direction.
9. The method of claim 7 , wherein forming the first plurality of fin structures comprises forming each of the first plurality of fin structures extending in the third direction parallel to the first direction.
10. The method of claim 6 , further comprising connecting at least one of the second plurality of fin structures to a ground voltage.
11. The method of claim 6 , further comprising forming a third plurality of fin structures arranged in the first direction, wherein adjacent fin structures of the third plurality of fin structures are separated by the first distance, and the first plurality of fin structures is between the core circuitry and the third plurality of fin structures.
12. The method of claim 6 , further comprising forming a third plurality of fin structures arranged in the second direction, wherein adjacent fin structures of the third plurality of fin structures are separated by the second distance, and the second plurality of fin structures is between the core circuitry and the third plurality of fin structures.
13. The method of claim 6 , further comprising forming a third plurality of fin structures arranged surrounding the first plurality of fin structures and the second plurality of fin structures.
14. A method of making a circuit device comprising:
implanting a first guard ring adjacent a first side of core circuitry, wherein the first guard ring comprises a first component part, and the first guard ring has a first dopant-type; and
implanting a second guard ring, wherein the first guard ring is between the second guard ring and the core circuitry, the second guard ring has a second dopant-type opposite the first dopant-type, the second guard ring comprises a second component part, and a second portion of the second component part is closer to the core circuitry than a first portion of the first component part.
15. The method of claim 14 , further comprising implanting a third guard ring, wherein the second guard ring is between the first guard ring and the third guard ring.
16. The method of claim 15 , wherein implanting the third guard ring comprises implanting dopants having the first dopant-type.
17. The method of claim 15 , further comprising implanting a fourth guard ring, wherein the third guard ring is between the second guard ring and the fourth guard ring.
18. The method of claim 17 , wherein implanting the fourth guard ring comprises implanting dopants having the second dopant-type.
19. The method of claim 14 , wherein implanting the first guard ring comprises implanting p-type dopants.
20. The method of claim 14 , wherein implanting the first guard ring comprises implanting n-type dopants.