Methods for variable etch depths
Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.
1. A method, comprising:
providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area;
etching the substrate to recess the first and second processing areas;
forming a grating material over the substrate; and
etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.
2. The method of claim 1 , further comprising etching the grating material to form a first plurality of trenches and a second plurality of trenches.
3. The method of claim 2 , further comprising varying an etch depth between two or more trenches of the first plurality of trenches, and varying an etch depth between two or more trenches of the second plurality of trenches.
4. The method of claim 1 , further comprising recessing the first processing area to a first depth and recessing the second grating to a second depth, wherein the first depth is different than the second depth.
5. The method of claim 1 , the plurality of structures comprising a first set of structures and a second set of structures.
6. The method of claim 5 , wherein the first set of structures has a first average structure width, wherein the second set of structures has a second average structure width, and wherein the first average structure width is different than the second average structure width.
7. The method of claim 1 , the mask layer further including a third opening over a third processing area.
8. The method of claim 1 , wherein etching the substrate to recess the first and second processing areas comprises:
etching the first processing area while a blocking element is present over the second processing area;
removing the blocking element; and
etching the first and second processing areas.
9. The method of claim 1 , further comprising:
forming a hardmask over the grating material; and
patterning a first set of openings over the first processing area and a second set of openings over the second processing area, wherein the grating material is etched through the first set of openings and the second set of openings.
10. The method of claim 1 , wherein the grating material is an optical grating material.
11. A method of forming an optical device, comprising:
providing a mask layer atop a substrate, the mask layer including a first opening defining a first processing area and a second opening defining a second processing area;
etching the substrate to recess the first and second processing areas;
forming an optical grating material over the substrate; and
forming a plurality of structures by etching a plurality of trenches into the optical grating material in the first and second processing areas, wherein the plurality of structures is oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.
12. The method of claim 11 , wherein etching the plurality of trenches into the optical grating material comprises performing an angled ion implant to form a first plurality of trenches and a second plurality of trenches.
13. The method of claim 12 , further comprising varying a trench depth between two or more trenches of the first plurality of trenches and varying a trench depth between two or more trenches of the second plurality of trenches.
14. The method of claim 11 , further comprising recessing the first processing area to a first depth and recessing the second grating to a second depth, wherein the first depth is greater than the second depth.
15. The method of claim 11 , the plurality of structures comprising a first set of structures and a second set of structures.
16. The method of claim 15 , wherein the first set of structures has a first average structure width, wherein the second set of structures has a second average structure width, and wherein the first average structure width is different than the second average structure width.
17. The method of claim 11 , the mask layer further including a third opening defining a third processing area.
18. The method of claim 11 , wherein etching the substrate to recess the first and second processing areas, comprises:
forming a blocking element over the second processing area;
etching the first processing area while the blocking element is present over the second processing area;
removing the blocking element; and
etching the first and second processing areas.
19. The method of claim 11 , further comprising:
forming a hardmask over the grating material; and
patterning a first set of openings over the first processing area and a second set of openings over the second processing area, wherein the grating material is etched through the first set of openings and the second set of openings.
20. A method, comprising:
providing an ion beam source within a chamber, wherein the chamber is operable to deliver an ion beam to a substrate, and wherein the substrate includes a first processing area separated from a second processing area by a mask element;
etching the substrate to recess the first and second processing areas, wherein the first and second processing areas are recessed to different depths relative to a top surface of the substrate;
forming an optical grating material over the substrate; and
forming a plurality of structures by etching a plurality of trenches into the optical grating material in the first and second processing areas, wherein the plurality of structures is oriented at a non-zero angle with respect to a vertical extending from the top surface of the substrate.