Bonded body with piezoelectric monocrystalline substrate and supporting substrate
A piezoelectric monocrystalline substrate is composed of a material represented by LiAO 3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of E x O (1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89).
1. A bonded body comprising a supporting substrate, a piezoelectric monocrystalline substrate and a bonding layer provided between said supporting substrate and said piezoelectric monocrystalline substrate,
wherein said piezoelectric monocrystalline substrate comprises a material represented by LiAO 3 (A represents at least one element selected from the group consisting of niobium and tantalum),
wherein said bonding layer comprises a material comprising an oxide of at least one element selected from the group consisting of niobium and tantalum,
wherein said bonded body further comprises an interface layer along an interface between said piezoelectric monocrystalline substrate and said bonding layer, said interface layer having a composition of E x O (1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89), and
wherein said bonded body further comprises a substrate-side intermediate layer between said interface layer and said piezoelectric monocrystalline substrate, said substrate-side intermediate layer having a composition of G y O (1-y) (G represents at least one element selected from the group consisting of niobium and tantalum and x<y≤0.91).
2. The bonded body of claim 1 , wherein said material of said bonding layer is represented by D 2 O 5 , and wherein D represents at least one element selected from the group consisting of niobium and tantalum.
3. The bonded body of claim 1 , further comprising a bonding layer-side intermediate layer between said interface layer and said bonding layer, wherein said bonding layer-side intermediate layer has a composition of J z O (1-z) (J represents at least one element selected from the group consisting of niobium and tantalum and x<z≤0.95).
4. The bonded body of claim 1 ,
wherein said material of said piezoelectric monocrystalline substrate is represented by LiTaO 3 ,
wherein said material of said bonding layer is represented by Ta 2 O 5 , and
wherein said interface layer has said composition of Ta x O (1-x) .
5. The bonded body of claim 1 ,
wherein said material of said piezoelectric monocrystalline substrate is represented by LiTaO 3 ,
wherein said material of said bonding layer is represented by Ta 2 O 5 , and
wherein said interface layer has said composition of Ta x O (1-x) .
6. A bonded body comprising a supporting substrate, a piezoelectric monocrystalline substrate and a bonding layer provided between said supporting substrate and said piezoelectric monocrystalline substrate,
wherein said piezoelectric monocrystalline substrate comprises a material represented by LiAO 3 (A represents at least one element selected from the group consisting of niobium and tantalum),
wherein said bonding layer comprises a material comprising an oxide of at least one element selected from the group consisting of niobium and tantalum,
wherein said bonded body further comprises an interface layer along an interface between said piezoelectric monocrystalline substrate and said bonding layer, said interface layer having a composition of E x O (1-x)
(E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89), and
wherein said bonded body further comprises a bonding layer-side intermediate layer between said interface layer and said bonding layer, said bonding layer-side intermediate layer having a composition of J z O (1-z) (J represents at least one element selected from the group consisting of niobium and tantalum and x<z≤0.95).
7. The bonded body of claim 6 , wherein said material of said bonding layer is represented by D 2 O 5 , and wherein D represents at least one element selected from the group consisting of niobium and tantalum.