Multiturn sensor arrangement

1. A magnetoresistance sensor comprising:

a magnetic strip comprising a plurality of magnetoresistive elements electrically coupled in series with each other, the magnetic strip having a spiral shaped layout, and each of the plurality of magnetoresistive elements of the magnetic strip having at least two states associated with different resistances;

a sensing circuit having at least one switching element, the sensing circuit electrically coupled to the magnetic strip, the sensing circuit configured to determine a state of a selected magnetoresistive element of the plurality of magnetoresistive elements; and

a reference element configured such that a parasitic effect in the reference element caused by an external magnetic field is generally similar to a parasitic effect in an element of the plurality of magnetoresistive elements,

wherein the sensing circuit is configured to provide a single readout.

2. The magnetoresistance sensor of claim 1 is one of a giant magnetoresistance (GMR) sensor, a tunnel magnetoresistance (TMR) sensor, or an anisotropic magnetoresistance (AMR) sensor.

3. The magnetoresistance sensor of claim 1 wherein the reference element has an element width generally similar to a strip width of the magnetic strip.

4. The magnetoresistance sensor of claim 3 , wherein the reference element is a reference resistor.

5. The giant magnetoresistance sensor of claim 3 , wherein the reference element forms a generally circular spiral shaped resistor.

6. The giant magnetoresistance sensor of claim 3 , wherein the reference element comprises a horizontal reference resistor and a vertical reference resistor.

7. A giant magnetoresistance (GMR) sensor comprising:

a magnetic strip comprising a plurality of magnetoresistive elements electrically coupled in series with each other, the magnetic strip having a spiral shaped layout, and each of the plurality of magnetoresistive elements of the magnetic strip having at least two states associated with different resistances;

means for reducing a parasitic effect in a magnetoresistive element of the plurality of magnetoresistive elements using a reference element; and

a sensing circuit having at least one switching element, the sensing circuit electrically coupled to the magnetic strip, the sensing circuit configured to determine a state of a selected magnetoresistive element of the plurality of magnetoresistive elements.

8. The giant magnetoresistance sensor of claim 7 , wherein the means for reducing a parasitic effect comprises a comparator that is configured to determine the parasitic effect in the magnetoresistive element of the plurality of magnetoresistive elements with a parasitic effect of the reference element.

9. The giant magnetoresistance sensor of claim 7 , wherein the reference element comprises an element width generally similar to a strip width of the magnetic strip such that a parasitic effect in the reference element caused by an external magnetic field is generally similar to the parasitic effect in the magnetoresistive element of the plurality of magnetoresistive elements.

10. A giant magnetoresistance (GMR) sensor comprising:

a magnetic strip comprising a plurality of magnetoresistive elements electrically coupled in series with each other, the magnetic strip having a spiral shaped layout with a strip width, and each of the plurality of magnetoresistive elements of the magnetic strip having at least two states associated with different resistances;

a reference element separate from the magnetic strip, the reference element having an element width generally similar to the strip width such that a parasitic effect in the reference element caused by an external magnetic field is generally similar to a parasitic effect in an element of the plurality of magnetoresistive elements; and

a sensing circuit having at least one switching element, the sensing circuit electrically coupled to the magnetic strip, the sensing circuit configured to determine, using the parasitic effect in the reference element, a state of a selected magnetoresistive element of the plurality of magnetoresistive elements.

11. The giant magnetoresistance sensor of claim 10 , wherein the sensing circuit senses an electromagnetic property of the selected magnetoresistive element, and the sensing circuit adjusts the sensed electromagnetic property using the parasitic effect in the reference element.

12. The giant magnetoresistance sensor of claim 11 , wherein the matrix is at least two by two and comprising rows of electrical connections and columns of electrical connections.

13. The giant magnetoresistance sensor of claim 12 , wherein the reference element is positioned at a cell of the matrix unoccupied by the plurality of magnetoresistive elements.

14. The giant magnetoresistance sensor of claim 10 , wherein the plurality of magnetoresistive elements and the reference element are coupled to a matrix of electrical connections.

15. The giant magnetoresistance sensor of claim 10 , wherein each of the plurality of magnetoresistive elements and the reference element are coupled to at least two switching element to selectively sense an electromagnetic property of a selected one of the plurality of magnetoresistive elements and the reference element.

16. The giant magnetoresistance sensor of claim 10 , wherein the parasitic effect includes a change in bulk resistance.

17. The giant magnetoresistance sensor of claim 16 , wherein the change in bulk resistance is caused by a change in temperature of the element of the plurality of magnetoresistive elements.

18. The giant magnetoresistance sensor of claim 10 , further comprising a domain wall generator (DWG) coupled to the reference element, wherein the reference element includes a horizontal reference resistor element and a vertical reference resistor element.

19. The giant magnetoresistance sensor of claim 10 , wherein the reference element forms a generally circular spiral shaped resistor.

20. The giant magnetoresistance sensor of claim 10 , wherein the reference element comprises a reference resistor.