Semiconductor device
A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.
1. A semiconductor device comprising:
a semiconductor chip provided inside with a p-n junction;
an opaque sealing resin covering a surface of the semiconductor chip; and
a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent a light from reaching the sealing resin, the light being generated when a forward current flows through the p-n junction and having a particular wavelength causing deterioration of the sealing resin,
wherein the functional region includes a functional insulating film having an insulating property and arranged between the semiconductor chip and the sealing resin, and
the functional insulating film includes a fluorescent substance that converts the light having the particular wavelength into a light having a long wavelength.
2. The semiconductor device according to claim 1 , further comprising:
a substrate on which the semiconductor chip is mounted; and
a bonding member including metal and electrically bonding a wiring pattern arranged on a top surface of the substrate with an electrode provided on a main surface of the semiconductor chip opposed to the top surface of the substrate,
wherein the bonding member continuously extends along a side surface of the semiconductor chip.
3. A semiconductor device comprising:
a semiconductor chip provided inside with a p-n junction;
an opaque sealing resin covering a surface of the semiconductor chip; and
a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent a light from reaching the sealing resin, the light being generated when a forward current flows through the p-n junction and having a particular wavelength causing deterioration of the sealing resin,
wherein the functional region includes a functional insulating film having an insulating property and arranged between the semiconductor chip and the sealing resin, and
the functional insulating film includes a fluorescent microparticle including a fluorescent substance that converts the light having the particular wavelength into a light having a long wavelength and covers a surface of a particulate base body having a higher refractive index than the functional insulating film.
4. The semiconductor device according to claim 3 , wherein the particulate base body has a smaller coefficient of thermal expansion than a base body of the functional insulating film.
5. The semiconductor device according to claim 3 , further comprising:
a substrate on which the semiconductor chip is mounted; and
a bonding member including metal and electrically bonding a wiring pattern arranged on a top surface of the substrate with an electrode provided on a main surface of the semiconductor chip opposed to the top surface of the substrate,
wherein the bonding member continuously extends along a side surface of the semiconductor chip.
6. A semiconductor device comprising:
a semiconductor chip provided inside with a p-n junction;
an opaque sealing resin covering a surface of the semiconductor chip; and
a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent a light from reaching the sealing resin, the light being generated when a forward current flows through the p-n junction and having a particular wavelength causing deterioration of the sealing resin,
wherein the functional region includes a functional insulating film having an insulating property and arranged between the semiconductor chip and the sealing resin, and
the functional insulating film includes a microcrystal particle including a semiconductor having a band gap equal to or narrower than a semiconductor included in the semiconductor chip.
7. The semiconductor device according to claim 6 , further comprising:
a substrate on which the semiconductor chip is mounted; and
a bonding member including metal and electrically bonding a wiring pattern arranged on a top surface of the substrate with an electrode provided on a main surface of the semiconductor chip opposed to the top surface of the substrate,
wherein the bonding member continuously extends along a side surface of the semiconductor chip.