Method of manufacturing leadframes for semiconductor devices, corresponding leadframe and semiconductor device
Leadframes for semiconductor devices are manufactured by providing a laminar substrate of laser direct structuring material, the laminar substrate comprising first and second opposed surfaces, applying laser beam processing to the substrate to provide a first pattern of electrically-conductive formations at the first surface, a second pattern of electrically-conductive formations at the second surface and electrically-conductive vias through the substrate between the first surface and the second surface. Electrically-conductive material is formed, for instance via electrolytic or electroless growth of electrically-conductive material such a copper onto the first and second pattern of electrically-conductive formations as well as onto the electrically-conductive vias provided by applying laser beam processing to the substrate. The electrically-conductive vias are coupled to one or both of the electrically-conductive formations in the first pattern of electrically-conductive formations and the second pattern of electrically-conductive formations.
1. A method of manufacturing leadframes for semiconductor devices, the method comprising:
forming, by laser beam processing, a first pattern of electrically-conductive structures at a first surface of a laminar substrate of laser direct structuring material;
forming, by the laser beam processing, a second pattern of electrically-conductive structures at a second surface of the substrate, the second surface being opposite the first surface; and
forming electrically-conductive vias through the substrate between the first surface of the substrate and the second surface of the substrate, the electrically-conductive vias coupled to at least one of the electrically-conductive structures in the first pattern of electrically-conductive structures and in the second pattern of electrically-conductive structures.
2. The method of claim 1 , wherein the forming the electrically-conductive vias includes forming the electrically-conductive vias by laser beam processing.
3. The method of claim 1 , comprising forming electrically-conductive material onto the first pattern of electrically-conductive structures, the second pattern of electrically-conductive structures and the electrically-conductive vias.
4. The method of claim 3 , wherein the forming the electrically-conductive material comprises electroless or electrolytic growth of the electrically-conductive material.
5. The method of claim 1 , comprising forming plated contact formations over at least one of the first pattern of electrically-conductive structures or the second pattern of electrically-conductive structures.
6. The method of claim 1 , wherein the laminar substrate is a strip-like laminar substrate of laser direct structuring material, the method comprising:
forming a plurality of assemblies, each of the assemblies including the first pattern of electrically-conductive structures at the first surface of the substrate, the second pattern of electrically-conductive structures at the second surface of the substrate, and the electrically-conductive vias through the substrate between the first surface of the substrate and the second surface of the substrate, the electrically-conductive vias coupled to at least one of the electrically-conductive structures in the first pattern of electrically-conductive structures and in the second pattern of electrically-conductive structures; and
singulating the strip-like laminar substrate to separate the assemblies in the plurality of assemblies.
7. The method of claim 6 , comprising forming indexing apertures along sides of the strip-like laminar substrate, the indexing apertures providing reference markers for the singulating the strip-like laminar substrate.
8. The method of claim 7 , wherein the forming the indexing apertures includes forming the indexing apertures by laser beam drilling the strip-like laminar substrate.
9. A method, comprising:
forming, by laser beam processing, a first pattern of electrically-conductive structures at a first surface of a laminar substrate of laser direct structuring material;
forming, by the laser beam processing, a second pattern of electrically-conductive structures at a second surface of the substrate, the second surface being opposite the first surface;
forming electrically-conductive vias through the substrate between the first surface of the substrate and the second surface of the substrate, the electrically-conductive vias coupled to at least one of the electrically-conductive structures in the first pattern of electrically-conductive structures and in the second pattern of electrically-conductive structures; and
forming a copper layer on the first pattern of electrically-conductive structures, the second pattern of electrically-conductive structures, and the electrically-conductive vias.
10. The method of claim 9 wherein the forming the electrically-conductive vias includes forming the electrically-conductive vias by laser beam processing.
11. The method of claim 9 wherein the forming the copper layer includes forming the copper layer by electroless or electrolytic growth.
12. The method of claim 9 , comprising forming plated contact formations over at least one of the first pattern of electrically-conductive structures or the second pattern of electrically-conductive structures.
13. The method of claim 9 , wherein the laminar substrate is a strip-like laminar substrate of laser direct structuring material, the method comprising:
forming a plurality of assemblies, each of the assemblies including the first pattern of electrically-conductive structures at the first surface of the substrate, the second pattern of electrically-conductive structures at the second surface of the substrate, and the electrically-conductive vias through the substrate between the first surface of the substrate and the second surface of the substrate, the electrically-conductive vias coupled to at least one of the electrically-conductive structures in the first pattern of electrically-conductive structures and in the second pattern of electrically-conductive structures; and
singulating the strip-like laminar substrate to separate the assemblies in the plurality of assemblies.
14. The method of claim 13 , comprising forming indexing apertures along sides of the strip-like laminar substrate, the indexing apertures providing reference markers for the singulating the strip-like laminar substrate.
15. The method of claim 14 wherein the forming the indexing apertures includes forming the indexing apertures by laser beam drilling the strip-like laminar substrate.
16. The method of claim 9 wherein at least one of the first or second patterns of electrically-conductive structures includes an array of electrically-conductive structures between a die-mounting area of the substrate and the periphery of the substrate.
17. The method of claim 16 , wherein the array of electrically-conductive structures includes electrically-conductive structures having an increasing width away from the die-mounting area and towards the periphery of the substrate.
18. A method, comprising:
forming a leadframe, the forming the leadframe including:
forming a first pattern of electrically-conductive structures at a first surface of a laminar substrate of laser direct structuring material, the first pattern of electrically-conductive structures formed by laser beam processing;
forming a second pattern of electrically-conductive structures at a second surface of the substrate that is opposite the first surface, the second pattern of electrically-conductive structures formed by laser beam processing; and
forming electrically-conductive vias extending through the substrate between the first surface of the substrate and the second surface of the substrate, the electrically-conductive vias coupled to at least one of the electrically-conductive structures in the first pattern of electrically-conductive structures and in the second pattern of electrically-conductive structures; and
electrically coupling at least one semiconductor die to the leadframe, the at least one semiconductor die electrically coupled to the first pattern of electrically-conductive structures at the first surface of the substrate, the second pattern of electrically-conductive structures at the second surface of the substrate and the electrically-conductive vias.
19. The method of claim 18 wherein at least one of the first or second patterns of electrically-conductive structures includes an array of electrically-conductive structures between a die-mounting area of the substrate and a periphery of the substrate.
20. The method of claim 19 wherein the array of electrically-conductive structures includes electrically-conductive structures having an increasing width away from the die-mounting area and towards the periphery of the substrate.