Semiconductor nanomaterial with high stability
Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.
1. A quantum dot, comprising:
a core constituted of InP;
a first shell constituted of ZnSe and wrapping a surface of the core;
a second shell wrapping a surface of the first shell and having a material different from the first shell; and
a gradient alloy intermediate layer formed between the core and the first shell, and comprising an alloy constituted of In, P, Zn and Se, wherein a content of the In and P gradually decreases along a direction from the core to the first shell, a content of the Zn and Se gradually increases along the direction from the core to the first shell,
wherein a particle size of the quantum dot is greater than or equal to 11 nm, and the quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.
2. The quantum dot according to claim 1 , wherein the second shell is constituted of ZnS.
3. The quantum dot according to claim 1 , wherein the particle size of the quantum dot is in a range of 11 nm to 15 nm.
4. The quantum dot according to claim 1 , wherein the particle size of the quantum dot is greater than or equal to 15 nm.
5. The quantum dot according to claim 1 , wherein the quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield in a range of 60% to 90%.
6. The quantum dot according to claim 1 , wherein the quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield greater than or equal to 90%.
7. The quantum dot according to claim 1 , wherein the photoluminescence quantum yield of the quantum clot before and after storing at increased temperature is reduced by less than or equal to 5%.