Laser beam phase-modulation device, laser beam steering device and laser beam steering system including the same
A laser beam phase-modulation device, a laser beam steering device, and a laser beam steering system including the same are provided. The laser beam phase-modulation device includes a refractive index conversion layer having a refractive index that is changed according to an electrical signal applied thereto, the refractive index conversion layer including an upper surface on which the laser beam is incident and a lower surface opposite the upper surface, at least one antenna pattern embedded in the upper surface of the refractive index conversion layer, and a metal mirror layer provided under the lower surface of the refractive index conversion layer and configured to reflect the laser beam.
1. A device for modulating a phase of a laser beam, the device comprising:
a refractive index conversion layer having a refractive index that changes according to an electrical signal applied thereto, the refractive index conversion layer comprising an upper surface on which the laser beam is incident and a lower surface opposite the upper surface;
at least one antenna pattern embedded in the upper surface of the refractive index conversion layer;
an insulating layer disposed between the refractive index conversion layer and the at least one antenna pattern; and
a metal mirror layer provided under the lower surface of the refractive index conversion layer and configured to reflect the laser beam;
wherein the at least one antenna pattern has an upper surface, a lower surface, and side surfaces,
wherein the refractive index conversion layer is provided on the side surfaces and the lower surface of the at least one antenna pattern,
wherein the at least one antenna pattern has at least one of a metal, an alloy, and a metal nitride, and
wherein the insulating layer is disposed to cover the lower surface, and the entire side surfaces of the at least one antenna pattern.
2. The device of claim 1 , wherein the insulating layer comprises at least one of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3), hafnium dioxide (HfO2), hafnium silicon dioxide (HfSiO2), and zirconium dioxide (ZrO2).
3. The device of claim 1 , wherein the refractive index conversion layer comprises an oxide semiconductor.
4. The device of claim 3 , wherein the oxide semiconductor comprises at least one of Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Ga—In—Zn-Oxide (GIZO), Al—Zn-Oxide (AZO), Ga—Zn-Oxide (GZO), and ZnO.
5. The device of claim 1 , wherein the at least one antenna pattern comprises at least one of silver (Ag), gold (Au), aluminum (Al), platinum (Pt), titanium nitride (TiN), and tantalum nitride (TaN).