Storage unit and static random access memory
A storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first MOS transistor. A gate of the first MOS transistor is connected to the first storage bit, a source of the first MOS transistor is connected to a first read line, and a drain of the first MOS transistor is connected to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line; or in a second state, the second read line is a read word line, and the first read line is a read bit line.
1. A storage unit, comprising:
a latch, comprising:
a first inverting gate comprising a first output end configured to provide a first storage bit;
a second inverting gate coupled to the first inverting gate to form the latch, wherein the second inverting gate comprises a second output end configured to provide a second storage bit;
a write word line;
a first write bit line;
a first read line;
a second read line;
a first metal-oxide-semiconductor (MOS) transistor comprising:
a first gate coupled to the write word line;
a first source; and
a first drain, wherein a first one of the first source or the first drain is coupled to the second output end, and wherein a second one of the first source or the first drain, excluding the first one of the first source or the first drain, is coupled to the first write bit line;
a second write bit line, wherein a second logical state of the second write bit line is opposite to a first logical state of the first write bit line;
a second MOS transistor comprising:
a second gate coupled to the write word line;
a second source; and
a second drain, wherein a first one of the second source or the second drain is coupled to the first output end, and wherein a second one of the second source or the second drain, excluding the first one of the second source or the second drain, is coupled to the second write bit line; and
a third MOS transistor comprising:
a third gate coupled to a first one of the first output end or the second output end;
a third source; and
a third drain,
wherein a first one of the third source or the third drain is coupled to the first read line,
wherein a second one of the third source or the third drain is coupled to the second read line,
wherein the storage unit is configured to operate in a first read state and in a second read state,
wherein in the first read state, the first read line is a read word line and the second read line is a read bit line, and
wherein in the second read state, the first read line is a read bit line and the second read line is a read word line.
2. The storage unit of claim 1 , wherein the third MOS transistor is a PMOS transistor.
3. The storage unit of claim 2 , further comprising a fourth MOS transistor comprising:
a fourth gate coupled to a second one of the first output end or the second output end;
a fourth source; and
a fourth drain,
wherein a first one of the fourth source or the fourth drain is coupled to the first read line,
wherein a second one of the fourth source or the fourth drain is coupled to the second read line, and
wherein the fourth MOS transistor is an NMOS transistor.
4. The storage unit of claim 1 , wherein the first inverting gate and the second inverting gate are coupled in a head-to-tail manner.
5. The storage unit of claim 1 , wherein the storage unit is applied in a convolutional neural network chip.
6. The storage unit of claim 1 , wherein the first inverting gate comprises two MOS transistors.
7. The storage unit of claim 1 , wherein the second inverting gate comprises two MOS transistors.
8. A storage unit, comprising:
a latch configured to provide a first storage bit and a second storage bit;
a write metal-oxide-semiconductor (MOS) transistor comprising a first gate;
a write word line coupled to the first gate and configured to control the write MOS transistor;
a write bit line coupled to the first storage bit and the second storage bit using the write MOS transistor;
a first read line;
a second read line; and
a first MOS transistor comprising:
a second gate coupled to the first storage bit;
a source coupled to the first read line; and
a drain coupled to the second read line,
wherein the storage unit is configured to operate in a first read state and in a second read state,
wherein in the first read state, the first read line is a read word line and the second read line is a read bit line, and
wherein in the second read state, the first read line is a read bit line and the second read line is a read word line.
9. The storage unit of claim 8 , wherein the first MOS transistor is a PMOS transistor.
10. The storage unit of claim 9 , further comprising an NMOS transistor coupled to the second storage bit, the first read line, and the second read line.
11. The storage unit of claim 8 , wherein the storage unit is applied in a convolutional neural network chip.
12. The storage unit of claim 8 , wherein the first MOS transistor is coupled to the latch.
13. The storage unit of claim 8 , wherein the first MOS transistor further comprises a third gate coupled to the second storage bit.
14. A storage unit, comprising:
a latch comprising:
a first inverting gate comprising a first output end configured to provide a first storage bit;
a second inverting gate coupled to the first inverting gate, wherein the second inverting gate comprises a second output end configured to provide a second storage bit;
a first metal-oxide-semiconductor (MOS) transistor comprising:
a first source; and
a first drain, wherein a first one of the first source or the first drain is coupled to the second output end, and wherein a second one of the first source or the first drain, excluding the first one of the first source or the first drain, is coupled to a first write bit line;
a second MOS transistor comprising:
a second source; and
a second drain, wherein a third one of the second source and the second drain is coupled to the first output end, wherein a fourth one of the second source and the second drain, excluding the third one of the second source and the second drain, is coupled to a second write bit line, and wherein a second logical state of the second write bit line is opposite to a first logical state of the first write bit line; and
a third MOS transistor comprising:
a third gate coupled to a first one of the first output end or the second output end;
a third source; and
a third drain,
wherein a first one of the third source or the third drain is coupled to a first read line,
wherein a second one of the third source or the third drain is coupled to a second read line,
wherein the storage unit is configured to operate in a first read state and in a second read state,
wherein in the first read state, the first read line is a read word line and the second read line is a read bit line, and
wherein in the second read state, the first read line is a read bit line and the second read line is a read word line.
15. The storage unit of claim 14 , wherein the third MOS transistor is a PMOS transistor.
16. The storage unit of claim 15 , further comprising a fourth MOS transistor comprising:
a fourth gate coupled to a second one of the first output end or the second output end;
a fourth source; and
a fourth drain,
wherein a first one of the fourth source or the fourth drain is coupled to the first read line,
wherein a second one of the fourth source or the fourth drain is coupled to the second read line, and
wherein the fourth MOS transistor is an NMOS transistor.
17. The storage unit of claim 14 , wherein the first inverting gate and the second inverting gate are coupled in a head-to-tail manner.
18. The storage unit of claim 14 , wherein the storage unit is applied in a convolutional neural network chip.
19. The storage unit of claim 14 , wherein the first MOS transistor is coupled to the latch.
20. The storage unit of claim 19 , wherein the first MOS transistor further comprises a third gate coupled to the second output end.