Capacitor and method for manufacturing the same

1. A capacitor comprising:

a substrate including a first main surface and a second main surface opposite the first main surface;

a dielectric portion including at least one dielectric layer along the first main surface, wherein the dielectric portion includes a thick film portion having a thickness larger than an average thickness of the dielectric portion and a thin film portion having a thickness smaller than the average thickness, the average thickness being measured in a direction perpendicular to the first main surface, and the thick film portion having a larger relative permittivity than the thin film portion; and

a conductor layer on the dielectric portion.

2. The capacitor according to claim 1 , wherein

the substrate includes a recess in the first main surface,

the recess includes an upper end and a lower end,

the upper end is covered with the thick film portion, and

the lower end is covered with the thin film portion.

3. The capacitor according to claim 2 , wherein

the at least one dielectric layer is a plurality of dielectric layers,

the plurality of dielectric layers include an outermost dielectric layer closest to the conductor layer and at least one inner dielectric layer closest to the substrate, and

the outermost dielectric layer has a larger maximum layer thickness than the inner dielectric layer.

4. The capacitor according to claim 3 , wherein at least one of the plurality of dielectric layers is a doped dielectric layer containing an impurity that increases a relative permittivity of the doped dielectric layer.

5. The capacitor according to claim 4 , wherein the thick film portion in the doped dielectric layer includes a region in which a concentration of the impurity is increased where the conductor layer is closest thereto, or a region in which a concentration of the impurity is increased where the substrate is closest thereto, in a direction perpendicular to the first main surface.

6. The capacitor according to claim 5 , wherein the concentration of the impurity is increased where the conductor layer is closest thereto in the direction perpendicular to the first main surface in the thick film portion in the doped dielectric layer.

7. The capacitor according to claim 1 , wherein

the at least one dielectric layer is a plurality of dielectric layers,

the plurality of dielectric layers include an outermost dielectric layer closest to the conductor layer and at least one inner dielectric layer closest to the substrate, and

the outermost dielectric layer has a larger maximum layer thickness than the inner dielectric layer.

8. The capacitor according to claim 7 , wherein at least one of the plurality of dielectric layers is a doped dielectric layer containing an impurity that increases a relative permittivity of the doped dielectric layer.

9. The capacitor according to claim 8 , wherein the thick film portion in the doped dielectric layer includes a region in which a concentration of the impurity is increased where the conductor layer is closest thereto, or a region in which a concentration of the impurity is increased where the substrate is closest thereto, in a direction perpendicular to the first main surface.

10. The capacitor according to claim 9 , wherein the concentration of the impurity is increased where the conductor layer is closest thereto in the direction perpendicular to the first main surface in the thick film portion in the doped dielectric layer.

11. The capacitor according to claim 1 , wherein the at least one dielectric layer is a doped dielectric layer containing an impurity that increases a relative permittivity of the doped dielectric layer.

12. The capacitor according to claim 11 , wherein the thick film portion in the doped dielectric layer includes a region in which a concentration of the impurity is increased where the conductor layer is closest thereto, or a region in which a concentration of the impurity is increased where the substrate is closest thereto, in a direction perpendicular to the first main surface.

13. The capacitor according to claim 12 , Wherein the concentration of the impurity is increased where the conductor layer is closest, thereto in the direction perpendicular to the first main surface in the thick film portion in the doped dielectric layer.